JPS55128131A - Semiconductor pressure senser - Google Patents

Semiconductor pressure senser

Info

Publication number
JPS55128131A
JPS55128131A JP3559979A JP3559979A JPS55128131A JP S55128131 A JPS55128131 A JP S55128131A JP 3559979 A JP3559979 A JP 3559979A JP 3559979 A JP3559979 A JP 3559979A JP S55128131 A JPS55128131 A JP S55128131A
Authority
JP
Japan
Prior art keywords
passivation
diaphragm
zero point
oxide film
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3559979A
Other languages
Japanese (ja)
Other versions
JPS6154267B2 (en
Inventor
Kazuji Yamada
Kiyomitsu Suzuki
Motohisa Nishihara
Hideo Sato
Shigeyuki Kobori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3559979A priority Critical patent/JPS55128131A/en
Publication of JPS55128131A publication Critical patent/JPS55128131A/en
Publication of JPS6154267B2 publication Critical patent/JPS6154267B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To obtain a semiconductor pressure senser of a stable electrical characteristic and a small zero point variation due to the atmospheric temperature by changing the thickness of an oxide film for passivation of the diaphragm part and constrained part other than the diaphragm part.
CONSTITUTION: A diaphragm part 15 on a silicone base plate 12 is tightly sealed by a glass cap 25 for forming a reference pressure chamber 24 such as a vacuum chamber or the like, and the thickness of an oxide film 22 for passivation on piezo resistors 16a and 16b can be made less than 1/3 that of a field oxide film for passivation of the constrained part 13 other than the diaphragm part 15 because its deterioration is prevented by the tight sealing. The passivation film at the part required for electrical insulation is made thick, and the passivation film of the diaphragm 15 having a thermal expansion coefficient greater than that of silicone forming the base plate 12 and being liable to be affected by the temperature, and having a large zero point resistance is made thin. By this construction, a semiconductor pressure senser having an improved zero point temperature characteristic, and small error and small size.
COPYRIGHT: (C)1980,JPO&Japio
JP3559979A 1979-03-28 1979-03-28 Semiconductor pressure senser Granted JPS55128131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3559979A JPS55128131A (en) 1979-03-28 1979-03-28 Semiconductor pressure senser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3559979A JPS55128131A (en) 1979-03-28 1979-03-28 Semiconductor pressure senser

Publications (2)

Publication Number Publication Date
JPS55128131A true JPS55128131A (en) 1980-10-03
JPS6154267B2 JPS6154267B2 (en) 1986-11-21

Family

ID=12446272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3559979A Granted JPS55128131A (en) 1979-03-28 1979-03-28 Semiconductor pressure senser

Country Status (1)

Country Link
JP (1) JPS55128131A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4930353A (en) * 1988-08-07 1990-06-05 Nippondenso Co., Ltd. Semiconductor pressure sensor
JP4710147B2 (en) * 2000-06-13 2011-06-29 株式会社デンソー Semiconductor pressure sensor
US20150292973A1 (en) * 2014-04-09 2015-10-15 Continental Automotive Systems, Inc. Humidity resistant sensors and methods of making same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4930353A (en) * 1988-08-07 1990-06-05 Nippondenso Co., Ltd. Semiconductor pressure sensor
JP4710147B2 (en) * 2000-06-13 2011-06-29 株式会社デンソー Semiconductor pressure sensor
US20150292973A1 (en) * 2014-04-09 2015-10-15 Continental Automotive Systems, Inc. Humidity resistant sensors and methods of making same
US9574961B2 (en) * 2014-04-09 2017-02-21 Continental Automotive Systems, Inc. Humidity resistant sensors and methods of making same
US10352806B2 (en) 2014-04-09 2019-07-16 Continental Automotive Systems, Inc. Humidity resistant sensors and methods of making same

Also Published As

Publication number Publication date
JPS6154267B2 (en) 1986-11-21

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