JPS5484985A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS5484985A JPS5484985A JP15242477A JP15242477A JPS5484985A JP S5484985 A JPS5484985 A JP S5484985A JP 15242477 A JP15242477 A JP 15242477A JP 15242477 A JP15242477 A JP 15242477A JP S5484985 A JPS5484985 A JP S5484985A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- cover
- junction
- electrode
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To prevent characteristic deterioration by covering all of contact parts on the circumference of a diaphragm with cover materials and a multi-layer metallic film and cutting off completely the pn junction in the diaphragm from outside air.
CONSTITUTION: In diaphragm 21, p-type gage resistance 23 and contact part 23A are arranged around a n-type Si thin part, and the pn junction is protected by insulating film 35. Cover 25 which has cavity 24 at the center and has hole 26 corresponding to contact part 23A and has a thermal expansion coefficient approximating Si is put on diaphragm 21, and the cavity is made into a vacuum to unite the diaphragm and the cover. Next, metallic thin film 27 having the most upper layer consisting of precious metal is evaporated from the upper face side of the cover through the side face of hole 26. Next, glass tube 29 which has a thermal expansion coefficient approximating Si is coupled. Ceramic plate 30 is arranged on cover 25, and its electrode 31 is connected to metallic film 27. Lead 32 of electrode 31 and a part of glass tube 29 are sealed with resin. Thus, the pn junction of the diaphragm is completely cut off from outside air.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15242477A JPS581551B2 (en) | 1977-12-20 | 1977-12-20 | semiconductor pressure transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15242477A JPS581551B2 (en) | 1977-12-20 | 1977-12-20 | semiconductor pressure transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5484985A true JPS5484985A (en) | 1979-07-06 |
JPS581551B2 JPS581551B2 (en) | 1983-01-11 |
Family
ID=15540204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15242477A Expired JPS581551B2 (en) | 1977-12-20 | 1977-12-20 | semiconductor pressure transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS581551B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135323A (en) * | 1984-06-07 | 1986-02-19 | バイサラ・オ−ワイ | Capacitive pressure detector and manufacture thereof |
CN106461490A (en) * | 2014-08-01 | 2017-02-22 | Vega格里沙贝两合公司 | Pressure measuring arrangement and method for producing said pressure measuring arrangment |
-
1977
- 1977-12-20 JP JP15242477A patent/JPS581551B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6135323A (en) * | 1984-06-07 | 1986-02-19 | バイサラ・オ−ワイ | Capacitive pressure detector and manufacture thereof |
CN106461490A (en) * | 2014-08-01 | 2017-02-22 | Vega格里沙贝两合公司 | Pressure measuring arrangement and method for producing said pressure measuring arrangment |
Also Published As
Publication number | Publication date |
---|---|
JPS581551B2 (en) | 1983-01-11 |
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