JPS55124271A - Semiconductor pressure transducer - Google Patents
Semiconductor pressure transducerInfo
- Publication number
- JPS55124271A JPS55124271A JP3260079A JP3260079A JPS55124271A JP S55124271 A JPS55124271 A JP S55124271A JP 3260079 A JP3260079 A JP 3260079A JP 3260079 A JP3260079 A JP 3260079A JP S55124271 A JPS55124271 A JP S55124271A
- Authority
- JP
- Japan
- Prior art keywords
- pressure transducer
- diaphragm
- semiconductor pressure
- coating
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000003814 drug Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229940079593 drug Drugs 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To provide a semiconductor pressure transducer having excellent atmospheric resistance without affection of gas to be measured or liquid by forming a silicon layer on an insulating film for coating a diaphragm. CONSTITUTION:A silicon layer 18 is formed on an insulating film 15 such as SiO2 film or the like for coating the surface of diaphragm and support 12 made of silicon crystal plate. The layer 18 substantially protects the entire surface of the diaphragm and has high medicine resistance against medicines excepting special medicines. Accordingly, it can improve the atmospheric resistance, durability and reliability of the pressure transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3260079A JPS55124271A (en) | 1979-03-19 | 1979-03-19 | Semiconductor pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3260079A JPS55124271A (en) | 1979-03-19 | 1979-03-19 | Semiconductor pressure transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55124271A true JPS55124271A (en) | 1980-09-25 |
Family
ID=12363348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3260079A Pending JPS55124271A (en) | 1979-03-19 | 1979-03-19 | Semiconductor pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55124271A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990003664A1 (en) * | 1988-09-30 | 1990-04-05 | Kabushiki Kaisha Komatsu Seisakusho | Pressure sensor |
| JPH02296373A (en) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | Semiconductor device |
| JP2006200926A (en) * | 2005-01-18 | 2006-08-03 | Denso Corp | Pressure sensor |
-
1979
- 1979-03-19 JP JP3260079A patent/JPS55124271A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990003664A1 (en) * | 1988-09-30 | 1990-04-05 | Kabushiki Kaisha Komatsu Seisakusho | Pressure sensor |
| US5191798A (en) * | 1988-09-30 | 1993-03-09 | Kabushiki Kaisha Komatsu Seisakusho | Pressure sensor |
| JPH02296373A (en) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | Semiconductor device |
| JP2006200926A (en) * | 2005-01-18 | 2006-08-03 | Denso Corp | Pressure sensor |
| JP4506478B2 (en) * | 2005-01-18 | 2010-07-21 | 株式会社デンソー | Pressure sensor |
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