JPS559445A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS559445A
JPS559445A JP8226178A JP8226178A JPS559445A JP S559445 A JPS559445 A JP S559445A JP 8226178 A JP8226178 A JP 8226178A JP 8226178 A JP8226178 A JP 8226178A JP S559445 A JPS559445 A JP S559445A
Authority
JP
Japan
Prior art keywords
glass
cap
substrate
dielectric constant
specific dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8226178A
Other languages
Japanese (ja)
Other versions
JPS6042618B2 (en
Inventor
Masayoshi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8226178A priority Critical patent/JPS6042618B2/en
Publication of JPS559445A publication Critical patent/JPS559445A/en
Publication of JPS6042618B2 publication Critical patent/JPS6042618B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To improve the reliability of a device by changing the composition of glass of the region near a semiconductor element from that near peripheral part and glass-sealing without deteriorating element characteristics.
CONSTITUTION: The first glass 11 is coated near the outer peripheries of a package substrate 1 and a cap 2 made of ceramic material, and the second glass 12 is coated near a semiconductor 4 on the package substrate. They are both formed on the sealing parts of the substrate 1 and the cap 2, the substrate and the cap are put together and sealed airtightly melting the glass. For the first glass 11, glass of large specific dielectric constant, high chemical durability and high heat resistance, for example, Pb.B2O3 line glass including Ba and Ti is used. For the second glass, glass of small specific dielectric constant and especially good electric characteristics, for example, PbO.B2O3 line glass including Li is used. By so constructing, the sealed article has good moisture resistance, good airtightness and high reliability.
COPYRIGHT: (C)1980,JPO&Japio
JP8226178A 1978-07-06 1978-07-06 semiconductor equipment Expired JPS6042618B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8226178A JPS6042618B2 (en) 1978-07-06 1978-07-06 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8226178A JPS6042618B2 (en) 1978-07-06 1978-07-06 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS559445A true JPS559445A (en) 1980-01-23
JPS6042618B2 JPS6042618B2 (en) 1985-09-24

Family

ID=13769511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8226178A Expired JPS6042618B2 (en) 1978-07-06 1978-07-06 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6042618B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247153A (en) * 1985-08-27 1987-02-28 Ibiden Co Ltd Semiconductor device
JPH03292760A (en) * 1990-04-10 1991-12-24 Ngk Spark Plug Co Ltd Ceramic wiring board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6247153A (en) * 1985-08-27 1987-02-28 Ibiden Co Ltd Semiconductor device
JPH03292760A (en) * 1990-04-10 1991-12-24 Ngk Spark Plug Co Ltd Ceramic wiring board

Also Published As

Publication number Publication date
JPS6042618B2 (en) 1985-09-24

Similar Documents

Publication Publication Date Title
US3392312A (en) Glass encapsulated electronic devices
JPS5493962A (en) Semiconductor device
JPS55163850A (en) Semiconductor device
GB792489A (en) Improvements in or relating to electrical contact devices
JPS559445A (en) Semiconductor device
JPS5683048A (en) Semiconductor device
JPS5323286A (en) Semiconductor pressore, differential pressure tran smission device
JPS5645057A (en) Dhd type semiconductor device
JPS54129880A (en) Manufacture for semiconductor device
JPS5745262A (en) Sealing and fitting structure of semiconductor device
JPS5618751A (en) Gas detector
JPS53126270A (en) Production of semiconductor devices
JPS54133152A (en) Liquid crystal cell
JPS5446477A (en) Glass-sealed semiconductor device
JPS54102969A (en) Semiconductor device
JPS6238301B2 (en)
KR830001402B1 (en) Liquid crystal display element
JPS5519829A (en) Glass mold piling type semiconductor device
JPS55128131A (en) Semiconductor pressure senser
JPS5465599A (en) Gas sensor
JPS5570073A (en) Treating method of accelerating rom
JPS5645056A (en) Manufacture of semiconductor device
JPS54100277A (en) Semiconductor element for hybrid integrated circuit
JPS55166933A (en) Semiconductor device
JPS5598847A (en) High voltage resistant semiconductor device