JPS559445A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS559445A JPS559445A JP8226178A JP8226178A JPS559445A JP S559445 A JPS559445 A JP S559445A JP 8226178 A JP8226178 A JP 8226178A JP 8226178 A JP8226178 A JP 8226178A JP S559445 A JPS559445 A JP S559445A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- cap
- substrate
- dielectric constant
- specific dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE: To improve the reliability of a device by changing the composition of glass of the region near a semiconductor element from that near peripheral part and glass-sealing without deteriorating element characteristics.
CONSTITUTION: The first glass 11 is coated near the outer peripheries of a package substrate 1 and a cap 2 made of ceramic material, and the second glass 12 is coated near a semiconductor 4 on the package substrate. They are both formed on the sealing parts of the substrate 1 and the cap 2, the substrate and the cap are put together and sealed airtightly melting the glass. For the first glass 11, glass of large specific dielectric constant, high chemical durability and high heat resistance, for example, Pb.B2O3 line glass including Ba and Ti is used. For the second glass, glass of small specific dielectric constant and especially good electric characteristics, for example, PbO.B2O3 line glass including Li is used. By so constructing, the sealed article has good moisture resistance, good airtightness and high reliability.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8226178A JPS6042618B2 (en) | 1978-07-06 | 1978-07-06 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8226178A JPS6042618B2 (en) | 1978-07-06 | 1978-07-06 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS559445A true JPS559445A (en) | 1980-01-23 |
JPS6042618B2 JPS6042618B2 (en) | 1985-09-24 |
Family
ID=13769511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8226178A Expired JPS6042618B2 (en) | 1978-07-06 | 1978-07-06 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6042618B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6247153A (en) * | 1985-08-27 | 1987-02-28 | Ibiden Co Ltd | Semiconductor device |
JPH03292760A (en) * | 1990-04-10 | 1991-12-24 | Ngk Spark Plug Co Ltd | Ceramic wiring board |
-
1978
- 1978-07-06 JP JP8226178A patent/JPS6042618B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6247153A (en) * | 1985-08-27 | 1987-02-28 | Ibiden Co Ltd | Semiconductor device |
JPH03292760A (en) * | 1990-04-10 | 1991-12-24 | Ngk Spark Plug Co Ltd | Ceramic wiring board |
Also Published As
Publication number | Publication date |
---|---|
JPS6042618B2 (en) | 1985-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3392312A (en) | Glass encapsulated electronic devices | |
JPS5493962A (en) | Semiconductor device | |
JPS55163850A (en) | Semiconductor device | |
GB792489A (en) | Improvements in or relating to electrical contact devices | |
JPS559445A (en) | Semiconductor device | |
JPS5683048A (en) | Semiconductor device | |
JPS5323286A (en) | Semiconductor pressore, differential pressure tran smission device | |
JPS5645057A (en) | Dhd type semiconductor device | |
JPS54129880A (en) | Manufacture for semiconductor device | |
JPS5745262A (en) | Sealing and fitting structure of semiconductor device | |
JPS5618751A (en) | Gas detector | |
JPS53126270A (en) | Production of semiconductor devices | |
JPS54133152A (en) | Liquid crystal cell | |
JPS5446477A (en) | Glass-sealed semiconductor device | |
JPS54102969A (en) | Semiconductor device | |
JPS6238301B2 (en) | ||
KR830001402B1 (en) | Liquid crystal display element | |
JPS5519829A (en) | Glass mold piling type semiconductor device | |
JPS55128131A (en) | Semiconductor pressure senser | |
JPS5465599A (en) | Gas sensor | |
JPS5570073A (en) | Treating method of accelerating rom | |
JPS5645056A (en) | Manufacture of semiconductor device | |
JPS54100277A (en) | Semiconductor element for hybrid integrated circuit | |
JPS55166933A (en) | Semiconductor device | |
JPS5598847A (en) | High voltage resistant semiconductor device |