JPS5465599A - Gas sensor - Google Patents

Gas sensor

Info

Publication number
JPS5465599A
JPS5465599A JP13193177A JP13193177A JPS5465599A JP S5465599 A JPS5465599 A JP S5465599A JP 13193177 A JP13193177 A JP 13193177A JP 13193177 A JP13193177 A JP 13193177A JP S5465599 A JPS5465599 A JP S5465599A
Authority
JP
Japan
Prior art keywords
heater
gas sensor
insulation
oxide semiconductor
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13193177A
Other languages
Japanese (ja)
Inventor
Koichi Oguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13193177A priority Critical patent/JPS5465599A/en
Publication of JPS5465599A publication Critical patent/JPS5465599A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enhance reliability and reduce size and cost by laminating wirings for heater and oxide semiconductor film via insulation film on one surface of an insulation substrate.
CONSTITUTION: Wirings 4 for heater are formed by material such as Ti-Pt on an insulation substrate 1 such as ceramics. An insulation film 5 is formed thereon by SiO2 through, e.g., CVD process. Thereafter window-opening for drawing-out of heater electrodes is performed and an oxide semiconductor film 2 such as of SnO2 and its electrodes 3 are formed.
COPYRIGHT: (C)1979,JPO&Japio
JP13193177A 1977-11-02 1977-11-02 Gas sensor Pending JPS5465599A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13193177A JPS5465599A (en) 1977-11-02 1977-11-02 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13193177A JPS5465599A (en) 1977-11-02 1977-11-02 Gas sensor

Publications (1)

Publication Number Publication Date
JPS5465599A true JPS5465599A (en) 1979-05-26

Family

ID=15069548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13193177A Pending JPS5465599A (en) 1977-11-02 1977-11-02 Gas sensor

Country Status (1)

Country Link
JP (1) JPS5465599A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178147A (en) * 1981-04-27 1982-11-02 Nippon Soken Inc Detector for gaseous component
JPH02291951A (en) * 1989-05-01 1990-12-03 Figaro Eng Inc Manufacture of gas sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178147A (en) * 1981-04-27 1982-11-02 Nippon Soken Inc Detector for gaseous component
JPH02291951A (en) * 1989-05-01 1990-12-03 Figaro Eng Inc Manufacture of gas sensor

Similar Documents

Publication Publication Date Title
JPS51144183A (en) Semiconductor element containing surface protection film
JPS5355986A (en) Manufacture of semiconductor device
JPS5465599A (en) Gas sensor
JPS52131484A (en) Semiconductor device
JPS5253666A (en) Method of preventing impurity diffusion from doped oxide
JPS542070A (en) Manufacture for semiconductor element
JPS5263680A (en) Production of semiconductor device
JPS5230188A (en) Process for producing smiconductor device
JPS5270749A (en) Manufacture of electrode of gas discharge panel
JPS5420671A (en) Production of semiconductor devices
JPS53126270A (en) Production of semiconductor devices
JPS5267963A (en) Manufacture of semiconductor unit
JPS5289468A (en) Semiconductor device
JPS52147992A (en) Manufacture of semiconductor device
JPS5268371A (en) Semiconductor device
JPS52129279A (en) Production of semiconductor device
JPS5472971A (en) Protective coating for semiconductor surface
JPS548989A (en) Control rectifying device
JPS5424094A (en) Production of gas detecting element
JPS5750648A (en) Thick film type gas detecting element
JPS51138167A (en) Production method of semiconductor device
JPS5743432A (en) Semiconductor device
JPS5436182A (en) Manufacture for semiconductor device
JPS5396673A (en) Gas plasma etching method for sio2 film
JPS5410688A (en) Production of semiconductor device