JPS5446477A - Glass-sealed semiconductor device - Google Patents
Glass-sealed semiconductor deviceInfo
- Publication number
- JPS5446477A JPS5446477A JP11310377A JP11310377A JPS5446477A JP S5446477 A JPS5446477 A JP S5446477A JP 11310377 A JP11310377 A JP 11310377A JP 11310377 A JP11310377 A JP 11310377A JP S5446477 A JPS5446477 A JP S5446477A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- paste
- lead
- filler
- capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a sealed device with samll inter-lead capacity which resists high temperature and high humidity, by employing the PbTiQ3 system to the circumferential edge of an external lead-outlead, and low-melting-point glass of lithia porcelain as a filler to other parts.
CONSTITUTION: Powder of PbO-B2O3-Al2O3-SiO2 galss, and PbTiO3 and lithia porcelain is added to the solution, obtained by diluting nitrocellulose with carbitol, by about 2% to obtain paste 1 and paste 2. Paste 1 is arranged at the external circumference of ceramic container 4, and paste 2 is at the part outside it; and lead frame 7 is thermally pressure-welded to the sealed part and after element 6 is mounted on metallized layer, connections 8 are made. Then,cover 3 is placed and the glass is fused by being heated, thereby sealing the divice. Since the entire sealed part almost employs the glass which uses low-permittivity lithia porcelain as a filler, the capacity between leads dereases to one third of the conventional one, and the glass is emplyed at its outside ehich uses lead titanate resisting high-temperature and high-humidity sulofuric acid bath, so that the resistance will not deteriorate
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11310377A JPS5446477A (en) | 1977-09-19 | 1977-09-19 | Glass-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11310377A JPS5446477A (en) | 1977-09-19 | 1977-09-19 | Glass-sealed semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5446477A true JPS5446477A (en) | 1979-04-12 |
Family
ID=14603549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11310377A Pending JPS5446477A (en) | 1977-09-19 | 1977-09-19 | Glass-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5446477A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128155A (en) * | 1985-11-29 | 1987-06-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JP2008044746A (en) * | 2006-08-18 | 2008-02-28 | Daido Kogyo Co Ltd | Pin tip attachment structure of chain for manufacturing can |
-
1977
- 1977-09-19 JP JP11310377A patent/JPS5446477A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128155A (en) * | 1985-11-29 | 1987-06-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JP2008044746A (en) * | 2006-08-18 | 2008-02-28 | Daido Kogyo Co Ltd | Pin tip attachment structure of chain for manufacturing can |
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