JPS55126597A - Single crystal growing method - Google Patents

Single crystal growing method

Info

Publication number
JPS55126597A
JPS55126597A JP3387079A JP3387079A JPS55126597A JP S55126597 A JPS55126597 A JP S55126597A JP 3387079 A JP3387079 A JP 3387079A JP 3387079 A JP3387079 A JP 3387079A JP S55126597 A JPS55126597 A JP S55126597A
Authority
JP
Japan
Prior art keywords
container
single crystal
melt
melt phase
resistibility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3387079A
Other languages
English (en)
Other versions
JPS62880B2 (ja
Inventor
Toshihiko Ayusawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3387079A priority Critical patent/JPS55126597A/ja
Publication of JPS55126597A publication Critical patent/JPS55126597A/ja
Publication of JPS62880B2 publication Critical patent/JPS62880B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3387079A 1979-03-23 1979-03-23 Single crystal growing method Granted JPS55126597A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3387079A JPS55126597A (en) 1979-03-23 1979-03-23 Single crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3387079A JPS55126597A (en) 1979-03-23 1979-03-23 Single crystal growing method

Publications (2)

Publication Number Publication Date
JPS55126597A true JPS55126597A (en) 1980-09-30
JPS62880B2 JPS62880B2 (ja) 1987-01-09

Family

ID=12398539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3387079A Granted JPS55126597A (en) 1979-03-23 1979-03-23 Single crystal growing method

Country Status (1)

Country Link
JP (1) JPS55126597A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150862U (ja) * 1985-03-06 1986-09-18
JPS62153191A (ja) * 1985-12-27 1987-07-08 Mitsubishi Metal Corp 単結晶引き上げ装置
JPS62202892A (ja) * 1986-02-28 1987-09-07 Toshiba Ceramics Co Ltd シリコン単結晶の引上げ装置
US5840116A (en) * 1994-03-31 1998-11-24 Sumitomo Sitix Corporation Method of growing crystals

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2640315B2 (ja) * 1993-03-22 1997-08-13 住友シチックス株式会社 シリコン単結晶の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4829767U (ja) * 1971-08-13 1973-04-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4829767U (ja) * 1971-08-13 1973-04-12

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61150862U (ja) * 1985-03-06 1986-09-18
JPH037405Y2 (ja) * 1985-03-06 1991-02-25
JPS62153191A (ja) * 1985-12-27 1987-07-08 Mitsubishi Metal Corp 単結晶引き上げ装置
JPS62202892A (ja) * 1986-02-28 1987-09-07 Toshiba Ceramics Co Ltd シリコン単結晶の引上げ装置
US5840116A (en) * 1994-03-31 1998-11-24 Sumitomo Sitix Corporation Method of growing crystals

Also Published As

Publication number Publication date
JPS62880B2 (ja) 1987-01-09

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