JPS55118627A - Compound semiconductor wafer and its manufacturing method - Google Patents

Compound semiconductor wafer and its manufacturing method

Info

Publication number
JPS55118627A
JPS55118627A JP2516179A JP2516179A JPS55118627A JP S55118627 A JPS55118627 A JP S55118627A JP 2516179 A JP2516179 A JP 2516179A JP 2516179 A JP2516179 A JP 2516179A JP S55118627 A JPS55118627 A JP S55118627A
Authority
JP
Japan
Prior art keywords
compound semiconductor
layer
semiconductor
intermediate layer
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2516179A
Other languages
Japanese (ja)
Inventor
Kiyoshi Morimoto
Hiroshi Watanabe
Shigeo Ito
Ko Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP2516179A priority Critical patent/JPS55118627A/en
Publication of JPS55118627A publication Critical patent/JPS55118627A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a efficient wafer through a simple process by a method wherein a thin intermediate layer containing composing elements of both a substrate and a compound semiconductor is formed between semiconductor substrate and a compound semiconductor epitaxial growth layer. CONSTITUTION:By collision of particles of semiconductor compound material against a semiconductor substrate 2 by ion beam evaporation method or cluster ion beam evaporation method, the first intermediate layer Em-1 which consists of a mixture of both composing elements of the semiconductor substrate 2 and composing elements of a compound semiconductor is formed to get to a thickness of 500nm or less. Futhermore by the continuation of the evaporation process above described, the first compound semiconductor epitaxial growth layer E1 is formed on the first intermediate layer Em-1. Next thereto by the same procedure being repeated, the second compound semiconductor layer E2 is formed on the first compound semiconductor layer E1 putting the second intermediate layer Em-2 between the first semiconductor layer E1 and the second compound semiconductor layer E2. The second intermediate layer Em-2 may be omissible in some case.
JP2516179A 1979-03-06 1979-03-06 Compound semiconductor wafer and its manufacturing method Pending JPS55118627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2516179A JPS55118627A (en) 1979-03-06 1979-03-06 Compound semiconductor wafer and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2516179A JPS55118627A (en) 1979-03-06 1979-03-06 Compound semiconductor wafer and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS55118627A true JPS55118627A (en) 1980-09-11

Family

ID=12158285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2516179A Pending JPS55118627A (en) 1979-03-06 1979-03-06 Compound semiconductor wafer and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS55118627A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091625A (en) * 1983-10-25 1985-05-23 Mitsubishi Electric Corp Manufacture of thin film
JPS62131511A (en) * 1985-12-04 1987-06-13 Canon Inc Fine particle spraying device
JPS63296001A (en) * 1987-05-28 1988-12-02 Toshinori Takagi Optical crystalline film
US5107317A (en) * 1989-11-20 1992-04-21 Fujitsu Ltd. Semiconductor device with first and second buffer layers
US5183778A (en) * 1989-11-20 1993-02-02 Fujitsu Limited Method of producing a semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.CRYSTAL GROWTH *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091625A (en) * 1983-10-25 1985-05-23 Mitsubishi Electric Corp Manufacture of thin film
JPS62131511A (en) * 1985-12-04 1987-06-13 Canon Inc Fine particle spraying device
JPS63296001A (en) * 1987-05-28 1988-12-02 Toshinori Takagi Optical crystalline film
US5107317A (en) * 1989-11-20 1992-04-21 Fujitsu Ltd. Semiconductor device with first and second buffer layers
US5183778A (en) * 1989-11-20 1993-02-02 Fujitsu Limited Method of producing a semiconductor device

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