JPS5643723A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5643723A
JPS5643723A JP12030079A JP12030079A JPS5643723A JP S5643723 A JPS5643723 A JP S5643723A JP 12030079 A JP12030079 A JP 12030079A JP 12030079 A JP12030079 A JP 12030079A JP S5643723 A JPS5643723 A JP S5643723A
Authority
JP
Japan
Prior art keywords
layer
type
grooves
al2o3 film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12030079A
Other languages
Japanese (ja)
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12030079A priority Critical patent/JPS5643723A/en
Publication of JPS5643723A publication Critical patent/JPS5643723A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To accurately form a semiconductor element using a pattern on a semiconductor layer nonformed section as a mask matching index by a method wherein section of the semiconductor substrate surface providing a pattern is covered by a nonreaction type material and a semiconductor layer is selectively formed. CONSTITUTION:Long strip of concaved grooves 2 are formed by performing a selective etching on the surface of an N type GaAs semiconductor substrate 1 and after an Al2O3 film 11 is provided by sputtering on the whole surface of the N type GaAs semiconductor substrate 1, the Al2O3 film is left only on the region which includes several long strip of concaved grooves 2 by performing a selective etching. Then an N type Al03Ga07As layer 3 and an N type Al Al01Ga09As layer 4, a GaAs layer 5, a P type Al03Ga07As layer 6 and an N type GaAs layer 7 are formed by having a liquid-phase epitaxial growth. Hence, as an epitaxial layer is not grown on the Al2O3 film, the grooves 2 are preserved in the original form on the Al2O3 film and by utilizing these grooves 2 as an guiding index for positioning, a semiconductor element can be formed accurately.
JP12030079A 1979-09-18 1979-09-18 Manufacture of semiconductor element Pending JPS5643723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12030079A JPS5643723A (en) 1979-09-18 1979-09-18 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12030079A JPS5643723A (en) 1979-09-18 1979-09-18 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5643723A true JPS5643723A (en) 1981-04-22

Family

ID=14782817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12030079A Pending JPS5643723A (en) 1979-09-18 1979-09-18 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5643723A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431413A (en) * 1987-07-28 1989-02-01 Matsushita Electronics Corp Measurement of pattern shift during epitaxial growth
US9596909B2 (en) 2011-10-19 2017-03-21 Ykk Corporation Slide fastener

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929986A (en) * 1972-07-19 1974-03-16
JPS4989479A (en) * 1972-12-26 1974-08-27
JPS52103964A (en) * 1976-02-26 1977-08-31 Nec Corp Manufacture for semiconductor device
JPS53123089A (en) * 1977-04-01 1978-10-27 Hitachi Ltd Production of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929986A (en) * 1972-07-19 1974-03-16
JPS4989479A (en) * 1972-12-26 1974-08-27
JPS52103964A (en) * 1976-02-26 1977-08-31 Nec Corp Manufacture for semiconductor device
JPS53123089A (en) * 1977-04-01 1978-10-27 Hitachi Ltd Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431413A (en) * 1987-07-28 1989-02-01 Matsushita Electronics Corp Measurement of pattern shift during epitaxial growth
US9596909B2 (en) 2011-10-19 2017-03-21 Ykk Corporation Slide fastener

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