JPS6430285A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPS6430285A JPS6430285A JP18709287A JP18709287A JPS6430285A JP S6430285 A JPS6430285 A JP S6430285A JP 18709287 A JP18709287 A JP 18709287A JP 18709287 A JP18709287 A JP 18709287A JP S6430285 A JPS6430285 A JP S6430285A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- rib structure
- upper cladding
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To reduce the number of lithography processes at least from two to one by a method wherein, after left and right cladding layers are formed on both the sides of a rib structure, semiconductor layers which has a property of not growing on the upper cladding layer of the rib structure and a function of masking for introducing an impurity into the upper cladding layer are formed on the left and right cladding layers. CONSTITUTION:On both the left and right sides of a rib structure 5, p-type AlzGa1-zAs layers 16 and n-type AlzGa1-zAs layers 7 are successively built up. Then p-type GaAs semiconductor layers 20 which does not grow or a p-type AlxGa1-xAs layer 4 with the properly selected composition ratio as the upper cladding layer 4 of the rib structure 5 but grows only on the left and right n-type AlzGa1-zAs upper cladding layers 7 are built up. If a suitable impurity such as Zn is introduced into the whole surfaces of the semiconductor layers 20 between which an aperture 21 is formed in a self-alignment manner by a method such as diffusion, the p-type GaAs layers 20 can be practically utilized as diffusion masks and a required impurity diffused layer (Zn diffused layer) 22 can be formed only in the region mainly from the top surface of the upper cladding layer 4 of the rib structure 5 to the required depth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18709287A JPS6430285A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18709287A JPS6430285A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6430285A true JPS6430285A (en) | 1989-02-01 |
| JPH0565072B2 JPH0565072B2 (en) | 1993-09-16 |
Family
ID=16199965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18709287A Granted JPS6430285A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430285A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0357206A (en) * | 1989-07-26 | 1991-03-12 | Nichicon Corp | Capacitor for energy storage and quick discharge |
| JPH03280410A (en) * | 1990-03-28 | 1991-12-11 | Nichicon Corp | High voltage power capacitor |
-
1987
- 1987-07-27 JP JP18709287A patent/JPS6430285A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0357206A (en) * | 1989-07-26 | 1991-03-12 | Nichicon Corp | Capacitor for energy storage and quick discharge |
| JPH03280410A (en) * | 1990-03-28 | 1991-12-11 | Nichicon Corp | High voltage power capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0565072B2 (en) | 1993-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |