GB1467096A - Method for producing array of semiconductor light-emissive elements - Google Patents

Method for producing array of semiconductor light-emissive elements

Info

Publication number
GB1467096A
GB1467096A GB2469475A GB2469475A GB1467096A GB 1467096 A GB1467096 A GB 1467096A GB 2469475 A GB2469475 A GB 2469475A GB 2469475 A GB2469475 A GB 2469475A GB 1467096 A GB1467096 A GB 1467096A
Authority
GB
United Kingdom
Prior art keywords
type
layer
epitaxial
sio
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2469475A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AKIMOV
Original Assignee
AKIMOV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AKIMOV filed Critical AKIMOV
Priority to GB2469475A priority Critical patent/GB1467096A/en
Priority to DE2527074A priority patent/DE2527074B2/en
Publication of GB1467096A publication Critical patent/GB1467096A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Abstract

1467096 Light emitting arrays J S AKIMOV V P SUSHKOV and V I KURINNY 9 June 1975 24694/75 Heading H1K An array of light emitting elements is formed in a body comprising a P + type GaAs substrate 1, a P type Ga 1-x Al x As epitaxial layer 2 and an N type Ga 1-y Al y As epitaxial layer by ion implanting an acceptor dopant into selected areas of the N type layer through a photoresist mask, removing the photoresist mask and covering the entire surface of the upper layer with SiO 2 8, and then heating to cause the implanted acceptors to diffuse through the full thickness of the N type layer to form P type portions 10 separating residual N type zones 9 which define the light-emissive junctions with the underlying P type layer 2. The presence of the SiO 2 8 means that the diffusion can be carried out in an open furnace. In an embodiment the substrate 1 and layer 2 are both Zndoped, the N type layer is Te-doped, the two epitaxial layers are formed by liquid phase epitaxy and the ion implanted and redistributed dopant for portions 10 is Zn, Be or Cd. The two epitaxial layer compositions are defined by x=0À35; y=0À47-0À50. Specified Au/Ge, Au/Zn or Al electrodes may be employed.
GB2469475A 1975-06-09 1975-06-09 Method for producing array of semiconductor light-emissive elements Expired GB1467096A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB2469475A GB1467096A (en) 1975-06-09 1975-06-09 Method for producing array of semiconductor light-emissive elements
DE2527074A DE2527074B2 (en) 1975-06-09 1975-06-18 Manufacturing process for an arrangement of several light emitting diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2469475A GB1467096A (en) 1975-06-09 1975-06-09 Method for producing array of semiconductor light-emissive elements

Publications (1)

Publication Number Publication Date
GB1467096A true GB1467096A (en) 1977-03-16

Family

ID=10215796

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2469475A Expired GB1467096A (en) 1975-06-09 1975-06-09 Method for producing array of semiconductor light-emissive elements

Country Status (1)

Country Link
GB (1) GB1467096A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (en) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu HETERO-JUNCTION LIGHT EMITTING DIODE
EP0180479A2 (en) * 1984-11-02 1986-05-07 Xerox Corporation Light-emitting diode array

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (en) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu HETERO-JUNCTION LIGHT EMITTING DIODE
EP0180479A2 (en) * 1984-11-02 1986-05-07 Xerox Corporation Light-emitting diode array
EP0180479A3 (en) * 1984-11-02 1987-11-19 Xerox Corporation Light-emitting diode array

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee