JPS5483786A - Poly-crystal silicon resistance element - Google Patents

Poly-crystal silicon resistance element

Info

Publication number
JPS5483786A
JPS5483786A JP15197677A JP15197677A JPS5483786A JP S5483786 A JPS5483786 A JP S5483786A JP 15197677 A JP15197677 A JP 15197677A JP 15197677 A JP15197677 A JP 15197677A JP S5483786 A JPS5483786 A JP S5483786A
Authority
JP
Japan
Prior art keywords
resistance
film
poly
mask
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15197677A
Other languages
Japanese (ja)
Inventor
Isamu Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15197677A priority Critical patent/JPS5483786A/en
Publication of JPS5483786A publication Critical patent/JPS5483786A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To form a high-resistance element in a small geometric shape of poly Si.
CONSTITUTION: On insulating film 1, B-added P-type poly Si film 2 is vapor-phase- grown and thermally oxidized film 3 is provided and selectively etched to obtain mask 3 in a desired shape. After film 2 is etched, nitride-film piece 4 is selectively formed and used as a mask for phosphorus diffusion, thereby forming N-type resistance layer 5. Next, Al electrodes 6 and 6' are selectivley formed. In N-type layer 5, narrow part 7 is formed by the mask effect of films 3 and 4 and changed into a high-resistance region. When the length , width and thickness of part 7 and the layer resistance of the flank are denoted by L, W, T, and S', R is equal to S'L/T × W. In this way, a small high-resistance elemet can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP15197677A 1977-12-16 1977-12-16 Poly-crystal silicon resistance element Pending JPS5483786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15197677A JPS5483786A (en) 1977-12-16 1977-12-16 Poly-crystal silicon resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15197677A JPS5483786A (en) 1977-12-16 1977-12-16 Poly-crystal silicon resistance element

Publications (1)

Publication Number Publication Date
JPS5483786A true JPS5483786A (en) 1979-07-04

Family

ID=15530331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15197677A Pending JPS5483786A (en) 1977-12-16 1977-12-16 Poly-crystal silicon resistance element

Country Status (1)

Country Link
JP (1) JPS5483786A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174355B2 (en) 2007-07-13 2012-05-08 Hitachi, Ltd. Semiconductor device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174355B2 (en) 2007-07-13 2012-05-08 Hitachi, Ltd. Semiconductor device and method for manufacturing the same

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