JPS5477588A - Heat insulating single piece semiconductor die and method of producing same - Google Patents

Heat insulating single piece semiconductor die and method of producing same

Info

Publication number
JPS5477588A
JPS5477588A JP12674978A JP12674978A JPS5477588A JP S5477588 A JPS5477588 A JP S5477588A JP 12674978 A JP12674978 A JP 12674978A JP 12674978 A JP12674978 A JP 12674978A JP S5477588 A JPS5477588 A JP S5477588A
Authority
JP
Japan
Prior art keywords
die
semiconductor
islands
forming
resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12674978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6151419B2 (enExample
Inventor
Daburiyuu Chiyaperu Jiyuni Roi
Mashitsuto Guroru Ai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fluke Corp
Original Assignee
John Fluke Manufacturing Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by John Fluke Manufacturing Co Inc filed Critical John Fluke Manufacturing Co Inc
Publication of JPS5477588A publication Critical patent/JPS5477588A/ja
Publication of JPS6151419B2 publication Critical patent/JPS6151419B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/02—Measuring effective values, i.e. root-mean-square values
    • G01R19/03—Measuring effective values, i.e. root-mean-square values using thermoconverters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
JP12674978A 1977-10-17 1978-10-13 Heat insulating single piece semiconductor die and method of producing same Granted JPS5477588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/842,972 US4257061A (en) 1977-10-17 1977-10-17 Thermally isolated monolithic semiconductor die

Publications (2)

Publication Number Publication Date
JPS5477588A true JPS5477588A (en) 1979-06-21
JPS6151419B2 JPS6151419B2 (enExample) 1986-11-08

Family

ID=25288725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12674978A Granted JPS5477588A (en) 1977-10-17 1978-10-13 Heat insulating single piece semiconductor die and method of producing same

Country Status (5)

Country Link
US (1) US4257061A (enExample)
EP (1) EP0001707B1 (enExample)
JP (1) JPS5477588A (enExample)
CA (1) CA1117221A (enExample)
DE (1) DE2862105D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020517961A (ja) * 2017-04-26 2020-06-18 ノク９ アイピー アクティエボラーグ 目標物の電力値を測定するための装置および方法

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4274143A (en) * 1979-08-02 1981-06-16 John Fluke Mfg. Co., Inc. Recirculating RMS AC conversion method and apparatus
US4551746A (en) * 1982-10-05 1985-11-05 Mayo Foundation Leadless chip carrier apparatus providing an improved transmission line environment and improved heat dissipation
US4920454A (en) * 1983-09-15 1990-04-24 Mosaic Systems, Inc. Wafer scale package system and header and method of manufacture thereof
US4847732A (en) * 1983-09-15 1989-07-11 Mosaic Systems, Inc. Wafer and method of making same
US4613891A (en) * 1984-02-17 1986-09-23 At&T Bell Laboratories Packaging microminiature devices
JPS61501295A (ja) * 1984-02-21 1986-06-26 エンバィアロンメンタル・リサーチ・インスティテュート・オブ・ミシガン ウェハスケールパッケージシステム
JP2673424B2 (ja) * 1984-02-21 1997-11-05 エンバィアロンメンタル・リサーチ・インスティテュート・オブ・ミシガン 集積回路用サブストレート
US4757528A (en) * 1986-09-05 1988-07-12 Harris Corporation Thermally coupled information transmission across electrical isolation boundaries
JPS6376279A (ja) * 1986-09-19 1988-04-06 株式会社日立製作所 コネクタ及びそれを用いた半導体素子実装構造
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
US4980586A (en) * 1987-10-07 1990-12-25 Tektronix, Inc. Digital integrated circuit propagation delay regulator
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
US5231877A (en) * 1990-12-12 1993-08-03 University Of Cincinnati Solid state microanemometer
DE4117133C1 (en) * 1991-05-25 1992-11-12 Ladislav Dr. Grno Thermoelectric power measuring converter - has resistance electronically controllable by instantaneous value of input signal and temp. sensor on common support heat-insulated from surroundings
JPH06151685A (ja) * 1992-11-04 1994-05-31 Mitsubishi Electric Corp Ｍｃｐ半導体装置
DE4416980C2 (de) * 1994-05-13 1998-04-09 Bosch Gmbh Robert Anordnung zur Kontaktierung von planaren Hochfrequenzleitungen und Verfahren zur Herstellung einer Anordnung zur Kontaktierung von planaren Hochfrequenzleitungen
WO1997005493A1 (de) * 1995-07-25 1997-02-13 Applied Precision S.R.O. Thermoelektrischer messkonverter
DE19527226A1 (de) * 1995-07-26 1997-01-30 Applied Precision S R O Thermoelektrischer Meßkonverter
US5783854A (en) * 1996-10-15 1998-07-21 Honeywell Inc. Thermally isolated integrated circuit
JP2000036501A (ja) * 1998-05-12 2000-02-02 Sharp Corp ダイボンド装置
US6510503B2 (en) 1998-07-27 2003-01-21 Mosaid Technologies Incorporated High bandwidth memory interface
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6521916B2 (en) 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US6639360B2 (en) 2001-01-31 2003-10-28 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
JP3964263B2 (ja) * 2002-05-17 2007-08-22 株式会社デンソー ブラインドビアホール充填方法及び貫通電極形成方法
US20040147056A1 (en) * 2003-01-29 2004-07-29 Mckinnell James C. Micro-fabricated device and method of making
US20050183589A1 (en) * 2004-02-19 2005-08-25 Salmon Peter C. Imprinting tools and methods for printed circuit boards and assemblies
US8070329B1 (en) 2005-02-11 2011-12-06 Gentex Corporation Light emitting optical systems and assemblies and systems incorporating the same
US20070176768A1 (en) * 2006-01-31 2007-08-02 Scott Jonathan B Thermocouple microwave power sensor
CN100392852C (zh) * 2006-04-12 2008-06-04 江苏长电科技股份有限公司 电子元器件平面凸点式超薄封装基板及其制作方法
CN100392851C (zh) * 2006-04-12 2008-06-04 江苏长电科技股份有限公司 半导体元器件平面凸点式超薄封装基板及其制作方法
DE112008003664T5 (de) * 2008-01-31 2010-12-30 Hewlett-Packard Development Co., L.P., Houston Isolierende Öffnung in Leiterplatten
DE102008036837A1 (de) 2008-08-07 2010-02-18 Epcos Ag Sensorvorrichtung und Verfahren zur Herstellung
US9134100B2 (en) * 2009-04-13 2015-09-15 Ensign-Bickford Aerospace & Defense Company Surface mountable semiconductor bridge die
EP2629084B1 (en) 2012-02-17 2018-05-02 ams international AG Integrated circuit and manufacturing method
CN104279529B (zh) * 2014-09-24 2017-12-15 惠州市英吉尔光电科技有限公司 一种led小型化电源
DE102017208147B4 (de) * 2017-05-15 2021-12-30 Schweizer Electronic Ag Elektronisches Bauteil und Leiterplatte mit diesem elektronischen Bauteil
CN112992849B (zh) * 2021-02-05 2022-06-03 长鑫存储技术有限公司 封装基板及具有其的半导体结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL134170C (enExample) * 1963-12-17 1900-01-01
US3395265A (en) * 1965-07-26 1968-07-30 Teledyne Inc Temperature controlled microcircuit
US3493820A (en) * 1966-12-01 1970-02-03 Raytheon Co Airgap isolated semiconductor device
NL6911479A (enExample) * 1968-07-26 1970-01-28
NL6910274A (enExample) * 1969-07-04 1971-01-06
NL7215200A (enExample) * 1972-11-10 1974-05-14
US3881181A (en) * 1973-02-22 1975-04-29 Rca Corp Semiconductor temperature sensor
NL7408033A (nl) * 1974-06-17 1975-12-19 Philips Nv Schakeling voor het meten van de effektieve waarde van een elektrisch signaal.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020517961A (ja) * 2017-04-26 2020-06-18 ノク９ アイピー アクティエボラーグ 目標物の電力値を測定するための装置および方法

Also Published As

Publication number Publication date
CA1117221A (en) 1982-01-26
EP0001707A1 (en) 1979-05-02
US4257061A (en) 1981-03-17
DE2862105D1 (en) 1982-11-18
EP0001707B1 (en) 1982-10-13
JPS6151419B2 (enExample) 1986-11-08

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