DE2862105D1 - A thermally isolated monolithic semiconductor die and a process for producing such a die - Google Patents

A thermally isolated monolithic semiconductor die and a process for producing such a die

Info

Publication number
DE2862105D1
DE2862105D1 DE7878300510T DE2862105T DE2862105D1 DE 2862105 D1 DE2862105 D1 DE 2862105D1 DE 7878300510 T DE7878300510 T DE 7878300510T DE 2862105 T DE2862105 T DE 2862105T DE 2862105 D1 DE2862105 D1 DE 2862105D1
Authority
DE
Germany
Prior art keywords
die
producing
thermally isolated
monolithic semiconductor
semiconductor die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7878300510T
Other languages
German (de)
English (en)
Inventor
Roy W Chapel
I Macit Gurol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fluke Corp
Original Assignee
John Fluke Manufacturing Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by John Fluke Manufacturing Co Inc filed Critical John Fluke Manufacturing Co Inc
Application granted granted Critical
Publication of DE2862105D1 publication Critical patent/DE2862105D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/02—Measuring effective values, i.e. root-mean-square values
    • G01R19/03—Measuring effective values, i.e. root-mean-square values using thermoconverters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE7878300510T 1977-10-17 1978-10-17 A thermally isolated monolithic semiconductor die and a process for producing such a die Expired DE2862105D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/842,972 US4257061A (en) 1977-10-17 1977-10-17 Thermally isolated monolithic semiconductor die

Publications (1)

Publication Number Publication Date
DE2862105D1 true DE2862105D1 (en) 1982-11-18

Family

ID=25288725

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7878300510T Expired DE2862105D1 (en) 1977-10-17 1978-10-17 A thermally isolated monolithic semiconductor die and a process for producing such a die

Country Status (5)

Country Link
US (1) US4257061A (enExample)
EP (1) EP0001707B1 (enExample)
JP (1) JPS5477588A (enExample)
CA (1) CA1117221A (enExample)
DE (1) DE2862105D1 (enExample)

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* Cited by examiner, † Cited by third party
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US4274143A (en) * 1979-08-02 1981-06-16 John Fluke Mfg. Co., Inc. Recirculating RMS AC conversion method and apparatus
US4551746A (en) * 1982-10-05 1985-11-05 Mayo Foundation Leadless chip carrier apparatus providing an improved transmission line environment and improved heat dissipation
US4847732A (en) * 1983-09-15 1989-07-11 Mosaic Systems, Inc. Wafer and method of making same
US4920454A (en) * 1983-09-15 1990-04-24 Mosaic Systems, Inc. Wafer scale package system and header and method of manufacture thereof
US4613891A (en) * 1984-02-17 1986-09-23 At&T Bell Laboratories Packaging microminiature devices
WO1985003804A1 (en) * 1984-02-21 1985-08-29 Mosaic Systems, Inc. Wafer scale package system and header and method of manufacture thereof
JP2673424B2 (ja) * 1984-02-21 1997-11-05 エンバィアロンメンタル・リサーチ・インスティテュート・オブ・ミシガン 集積回路用サブストレート
US4757528A (en) * 1986-09-05 1988-07-12 Harris Corporation Thermally coupled information transmission across electrical isolation boundaries
JPS6376279A (ja) * 1986-09-19 1988-04-06 株式会社日立製作所 コネクタ及びそれを用いた半導体素子実装構造
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
US4980586A (en) * 1987-10-07 1990-12-25 Tektronix, Inc. Digital integrated circuit propagation delay regulator
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
US5231877A (en) * 1990-12-12 1993-08-03 University Of Cincinnati Solid state microanemometer
DE4117133C1 (en) * 1991-05-25 1992-11-12 Ladislav Dr. Grno Thermoelectric power measuring converter - has resistance electronically controllable by instantaneous value of input signal and temp. sensor on common support heat-insulated from surroundings
JPH06151685A (ja) * 1992-11-04 1994-05-31 Mitsubishi Electric Corp Ｍｃｐ半導体装置
DE4416980C2 (de) * 1994-05-13 1998-04-09 Bosch Gmbh Robert Anordnung zur Kontaktierung von planaren Hochfrequenzleitungen und Verfahren zur Herstellung einer Anordnung zur Kontaktierung von planaren Hochfrequenzleitungen
AU6367396A (en) * 1995-07-25 1997-02-26 Applied Precision S.R.O. Thermoelectric measurement converter
DE19527226A1 (de) * 1995-07-26 1997-01-30 Applied Precision S R O Thermoelektrischer Meßkonverter
US5783854A (en) * 1996-10-15 1998-07-21 Honeywell Inc. Thermally isolated integrated circuit
JP2000036501A (ja) * 1998-05-12 2000-02-02 Sharp Corp ダイボンド装置
US6510503B2 (en) 1998-07-27 2003-01-21 Mosaid Technologies Incorporated High bandwidth memory interface
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6521916B2 (en) 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US6639360B2 (en) 2001-01-31 2003-10-28 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
JP3964263B2 (ja) * 2002-05-17 2007-08-22 株式会社デンソー ブラインドビアホール充填方法及び貫通電極形成方法
US20040147056A1 (en) * 2003-01-29 2004-07-29 Mckinnell James C. Micro-fabricated device and method of making
US20050183589A1 (en) * 2004-02-19 2005-08-25 Salmon Peter C. Imprinting tools and methods for printed circuit boards and assemblies
US8070329B1 (en) 2005-02-11 2011-12-06 Gentex Corporation Light emitting optical systems and assemblies and systems incorporating the same
US20070176768A1 (en) * 2006-01-31 2007-08-02 Scott Jonathan B Thermocouple microwave power sensor
CN100392851C (zh) * 2006-04-12 2008-06-04 江苏长电科技股份有限公司 半导体元器件平面凸点式超薄封装基板及其制作方法
CN100392852C (zh) * 2006-04-12 2008-06-04 江苏长电科技股份有限公司 电子元器件平面凸点式超薄封装基板及其制作方法
JP2011511455A (ja) * 2008-01-31 2011-04-07 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． プリント回路基板内の断熱用開口
DE102008036837A1 (de) 2008-08-07 2010-02-18 Epcos Ag Sensorvorrichtung und Verfahren zur Herstellung
US9134100B2 (en) * 2009-04-13 2015-09-15 Ensign-Bickford Aerospace & Defense Company Surface mountable semiconductor bridge die
EP2629084B1 (en) 2012-02-17 2018-05-02 ams international AG Integrated circuit and manufacturing method
CN104279529B (zh) * 2014-09-24 2017-12-15 惠州市英吉尔光电科技有限公司 一种led小型化电源
EP3396392B1 (en) * 2017-04-26 2020-11-04 ElectDis AB Apparatus and method for determining a power value of a target
DE102017208147B4 (de) * 2017-05-15 2021-12-30 Schweizer Electronic Ag Elektronisches Bauteil und Leiterplatte mit diesem elektronischen Bauteil
CN112992849B (zh) * 2021-02-05 2022-06-03 长鑫存储技术有限公司 封装基板及具有其的半导体结构

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NL134170C (enExample) * 1963-12-17 1900-01-01
US3395265A (en) * 1965-07-26 1968-07-30 Teledyne Inc Temperature controlled microcircuit
US3493820A (en) * 1966-12-01 1970-02-03 Raytheon Co Airgap isolated semiconductor device
DE1937755A1 (de) * 1968-07-26 1970-02-12 Signetics Corp Halbleiter-Baugruppe und -Vorrichtung mit ummanteltem Traegerleitungsaufbau und Verfahren zur Herstellung derselben
NL6910274A (enExample) * 1969-07-04 1971-01-06
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US3881181A (en) * 1973-02-22 1975-04-29 Rca Corp Semiconductor temperature sensor
NL7408033A (nl) * 1974-06-17 1975-12-19 Philips Nv Schakeling voor het meten van de effektieve waarde van een elektrisch signaal.

Also Published As

Publication number Publication date
US4257061A (en) 1981-03-17
EP0001707A1 (en) 1979-05-02
JPS5477588A (en) 1979-06-21
EP0001707B1 (en) 1982-10-13
JPS6151419B2 (enExample) 1986-11-08
CA1117221A (en) 1982-01-26

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