GB1381001A - Thermal radiation sensors - Google Patents
Thermal radiation sensorsInfo
- Publication number
- GB1381001A GB1381001A GB1022572A GB1022572A GB1381001A GB 1381001 A GB1381001 A GB 1381001A GB 1022572 A GB1022572 A GB 1022572A GB 1022572 A GB1022572 A GB 1022572A GB 1381001 A GB1381001 A GB 1381001A
- Authority
- GB
- United Kingdom
- Prior art keywords
- blank
- recess
- produced
- thermoelectric
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 4
- 239000000463 material Substances 0.000 abstract 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 abstract 1
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 229910016317 BiTe Inorganic materials 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910002665 PbTe Inorganic materials 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000011358 absorbing material Substances 0.000 abstract 1
- 238000007743 anodising Methods 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- 239000004568 cement Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 239000006233 lamp black Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- PDYNJNLVKADULO-UHFFFAOYSA-N tellanylidenebismuth Chemical compound [Bi]=[Te] PDYNJNLVKADULO-UHFFFAOYSA-N 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Electrochemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Radiation Pyrometers (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
1381001 Thermoelectric devices SENSORS Inc 4 March 1972 10225/72 Heading H1K A thermoelectric device is formed on a support produced by treating one face of a blank to form from the material of the blank a composition in the form of a high strength electrically insulating layer and removing part of the blank material to leave an exposed portion of the layer as a thin film supported at its entire periphery by the remaining blank material. An Al blank is produced with a recess in one face and the opposite face is polished and then anodized to form a layer of amorphous Al 2 O 3 . The depth of the recess is then increased, e.g. by etching, until the blank takes the form of a ring 22 having a thin film of Al 2 O 3 bridging the aperture. Thermoelectric materials are then deposited to form a thermocouple having its hot junction 46 at the centre of the film over the aperture and its cold junction above the Al supporting ring 22 which acts as a heat sink. The thermocouple is provided with contact pads 49, 50 of Ag, Au or In to which Au leads 47, 48 are connected by soldering or conductive cement. The blank may be completely anodized, but the oxide at the base of the recess must then be removed by abrading or etching before the recess can be etched out. The thin film may be in the shape of a cone, Fig. 6 (not shown), the interior surface of which is coated with radiation absorbing material and the hot junctions of a thermopile are deposited on the outer surface of the cone. A plurality of overlapping limbs of thermoelectric material may be deposited on the substrate to form a thermopile and the hot junctions may be covered with a radiation absorbing layer of lamp black. A radiation sensitive device may be mounted in a T05 type housing, having a transparent window in its cap, which may be evacuated or filled with Ar. The thermoelectric materials may be Bi, Sb, BiTe, PbTe or PbSe and may be applied to vacuum evaporation. The film may also be of Al 2 O 3 , AlN or Ta 2 O 3 produced by plasma anodizing Al or Ta blanks or of SiO 2 or Si 3 N 4 produced by thermally oxidizing or by chemical reaction with the surface of a Si blank. Al alloys may be used for the blank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1022572A GB1381001A (en) | 1972-03-04 | 1972-03-04 | Thermal radiation sensors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1022572A GB1381001A (en) | 1972-03-04 | 1972-03-04 | Thermal radiation sensors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1381001A true GB1381001A (en) | 1975-01-22 |
Family
ID=9963924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1022572A Expired GB1381001A (en) | 1972-03-04 | 1972-03-04 | Thermal radiation sensors |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1381001A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132282A (en) * | 1977-04-23 | 1978-11-17 | Japan Radio Co Ltd | Radiation wave detector |
| FR2398389A1 (en) * | 1977-07-21 | 1979-02-16 | Siemens Ag | DEVICE CONTAINING SEVERAL THERMOCOUPLES BRANCHED IN SERIES |
| GB2154367A (en) * | 1983-12-06 | 1985-09-04 | Hermsdorf Keramik Veb | Thermoelectric sensor |
| WO1989007836A1 (en) * | 1988-02-22 | 1989-08-24 | Migowski Friedrich Karl | Thermogenerator |
| CH672705GA3 (en) * | 1988-02-22 | 1989-12-29 | Migowski Friedrich Karl | Thermoelectric generator structure using P and N elements |
| US7834263B2 (en) | 2003-12-02 | 2010-11-16 | Battelle Memorial Institute | Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting |
| US7851691B2 (en) | 2003-12-02 | 2010-12-14 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US8455751B2 (en) | 2003-12-02 | 2013-06-04 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US9281461B2 (en) | 2003-12-02 | 2016-03-08 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| CN112582528A (en) * | 2020-12-28 | 2021-03-30 | 杭州博源光电科技有限公司 | Preparation method of thermoelectric stack in novel high-power laser detector |
-
1972
- 1972-03-04 GB GB1022572A patent/GB1381001A/en not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132282A (en) * | 1977-04-23 | 1978-11-17 | Japan Radio Co Ltd | Radiation wave detector |
| FR2398389A1 (en) * | 1977-07-21 | 1979-02-16 | Siemens Ag | DEVICE CONTAINING SEVERAL THERMOCOUPLES BRANCHED IN SERIES |
| GB2154367A (en) * | 1983-12-06 | 1985-09-04 | Hermsdorf Keramik Veb | Thermoelectric sensor |
| WO1989007836A1 (en) * | 1988-02-22 | 1989-08-24 | Migowski Friedrich Karl | Thermogenerator |
| CH672705GA3 (en) * | 1988-02-22 | 1989-12-29 | Migowski Friedrich Karl | Thermoelectric generator structure using P and N elements |
| US7834263B2 (en) | 2003-12-02 | 2010-11-16 | Battelle Memorial Institute | Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting |
| US7851691B2 (en) | 2003-12-02 | 2010-12-14 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US8455751B2 (en) | 2003-12-02 | 2013-06-04 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| US9281461B2 (en) | 2003-12-02 | 2016-03-08 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| CN112582528A (en) * | 2020-12-28 | 2021-03-30 | 杭州博源光电科技有限公司 | Preparation method of thermoelectric stack in novel high-power laser detector |
| CN112582528B (en) * | 2020-12-28 | 2023-04-07 | 杭州博源光电科技有限公司 | Preparation method of thermoelectric stack in novel high-power laser detector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |