JPS5471577A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5471577A
JPS5471577A JP13782877A JP13782877A JPS5471577A JP S5471577 A JPS5471577 A JP S5471577A JP 13782877 A JP13782877 A JP 13782877A JP 13782877 A JP13782877 A JP 13782877A JP S5471577 A JPS5471577 A JP S5471577A
Authority
JP
Japan
Prior art keywords
substrates
reaction chamber
nitride films
introducing
doped nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13782877A
Other languages
English (en)
Inventor
Shigeo Kotani
Nobuharu Yanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13782877A priority Critical patent/JPS5471577A/ja
Publication of JPS5471577A publication Critical patent/JPS5471577A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP13782877A 1977-11-18 1977-11-18 Production of semiconductor device Pending JPS5471577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13782877A JPS5471577A (en) 1977-11-18 1977-11-18 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13782877A JPS5471577A (en) 1977-11-18 1977-11-18 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5471577A true JPS5471577A (en) 1979-06-08

Family

ID=15207787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13782877A Pending JPS5471577A (en) 1977-11-18 1977-11-18 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5471577A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766645A (en) * 1980-10-09 1982-04-22 Fujitsu Ltd Manufacture of semiconductor device
JPS62156822A (ja) * 1985-12-27 1987-07-11 Nippon Telegr & Teleph Corp <Ntt> 絶縁薄膜とその形成方法及び形成装置
JPS63120444A (ja) * 1986-11-08 1988-05-24 Nippon Telegr & Teleph Corp <Ntt> 層間絶縁膜
JPH07323397A (ja) * 1994-06-02 1995-12-12 Kowa Kogyo Kk ゴミ圧縮装置
JP2001514448A (ja) * 1997-08-25 2001-09-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Ｐｅｃｖｄ窒化／酸窒化膜へのリン注入による不揮発性メモリセルの電荷損失の低減

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766645A (en) * 1980-10-09 1982-04-22 Fujitsu Ltd Manufacture of semiconductor device
JPS6331933B2 (ja) * 1980-10-09 1988-06-27 Fujitsu Ltd
JPS62156822A (ja) * 1985-12-27 1987-07-11 Nippon Telegr & Teleph Corp <Ntt> 絶縁薄膜とその形成方法及び形成装置
JPS63120444A (ja) * 1986-11-08 1988-05-24 Nippon Telegr & Teleph Corp <Ntt> 層間絶縁膜
JPH07323397A (ja) * 1994-06-02 1995-12-12 Kowa Kogyo Kk ゴミ圧縮装置
JP2001514448A (ja) * 1997-08-25 2001-09-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Ｐｅｃｖｄ窒化／酸窒化膜へのリン注入による不揮発性メモリセルの電荷損失の低減

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