JPS54162425A - Transistor circuit for semiconductor memory device - Google Patents

Transistor circuit for semiconductor memory device

Info

Publication number
JPS54162425A
JPS54162425A JP7192778A JP7192778A JPS54162425A JP S54162425 A JPS54162425 A JP S54162425A JP 7192778 A JP7192778 A JP 7192778A JP 7192778 A JP7192778 A JP 7192778A JP S54162425 A JPS54162425 A JP S54162425A
Authority
JP
Japan
Prior art keywords
sense amplifier
gated
sensitivity
amplified
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7192778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6156595B2 (enrdf_load_stackoverflow
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7192778A priority Critical patent/JPS54162425A/ja
Publication of JPS54162425A publication Critical patent/JPS54162425A/ja
Publication of JPS6156595B2 publication Critical patent/JPS6156595B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP7192778A 1978-06-13 1978-06-13 Transistor circuit for semiconductor memory device Granted JPS54162425A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7192778A JPS54162425A (en) 1978-06-13 1978-06-13 Transistor circuit for semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7192778A JPS54162425A (en) 1978-06-13 1978-06-13 Transistor circuit for semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS54162425A true JPS54162425A (en) 1979-12-24
JPS6156595B2 JPS6156595B2 (enrdf_load_stackoverflow) 1986-12-03

Family

ID=13474641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7192778A Granted JPS54162425A (en) 1978-06-13 1978-06-13 Transistor circuit for semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS54162425A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142594A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 半導体記憶装置
JPH03238692A (ja) * 1990-02-15 1991-10-24 Nec Corp 半導体メモリ回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119132A (en) * 1976-03-31 1977-10-06 Toshiba Corp Mos dynamic memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119132A (en) * 1976-03-31 1977-10-06 Toshiba Corp Mos dynamic memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142594A (ja) * 1984-12-17 1986-06-30 Hitachi Ltd 半導体記憶装置
JPH03238692A (ja) * 1990-02-15 1991-10-24 Nec Corp 半導体メモリ回路

Also Published As

Publication number Publication date
JPS6156595B2 (enrdf_load_stackoverflow) 1986-12-03

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