JPS538088A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS538088A
JPS538088A JP8198876A JP8198876A JPS538088A JP S538088 A JPS538088 A JP S538088A JP 8198876 A JP8198876 A JP 8198876A JP 8198876 A JP8198876 A JP 8198876A JP S538088 A JPS538088 A JP S538088A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
burying
produce
small area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8198876A
Other languages
Japanese (ja)
Other versions
JPS5950101B2 (en
Inventor
Seiichi Iwamatsu
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51081988A priority Critical patent/JPS5950101B2/en
Publication of JPS538088A publication Critical patent/JPS538088A/en
Publication of JPS5950101B2 publication Critical patent/JPS5950101B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To produce a memory LSI built with MIS type capacitors of a small area and a large capacity by burying thermally oxidized Si in the pin holes existing beforehand in Si3N4 film.
JP51081988A 1976-07-12 1976-07-12 Manufacturing method for semiconductor devices Expired JPS5950101B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51081988A JPS5950101B2 (en) 1976-07-12 1976-07-12 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51081988A JPS5950101B2 (en) 1976-07-12 1976-07-12 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS538088A true JPS538088A (en) 1978-01-25
JPS5950101B2 JPS5950101B2 (en) 1984-12-06

Family

ID=13761844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51081988A Expired JPS5950101B2 (en) 1976-07-12 1976-07-12 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5950101B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
JPS582057A (en) * 1981-06-29 1983-01-07 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin capacitor for monolithic integrated circuit
JPS5864588U (en) * 1981-10-27 1983-04-30 本田技研工業株式会社 Motorcycle seat device
JPS5911665A (en) * 1982-07-12 1984-01-21 Nec Corp Semiconductor device
JPS59181662A (en) * 1983-03-31 1984-10-16 Toshiba Corp Semiconductor memory device and manufacture thereof
JPS6085576A (en) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd Manufacture of thin film photoelectric conversion element
JPS6085578A (en) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd Manufacture of thin film photoelectric conversion element
JPS62118559A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor device
JPS62234360A (en) * 1985-11-29 1987-10-14 Hitachi Ltd Semiconductor device and its manufacture
JPS6323346A (en) * 1987-04-20 1988-01-30 Hitachi Ltd Semiconductor memory device
JPS63146471A (en) * 1987-11-20 1988-06-18 Agency Of Ind Science & Technol Manufacture of mis element
KR19980020885A (en) * 1996-09-12 1998-06-25 김광호 Capacitor Manufacturing Process

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
JPS582057A (en) * 1981-06-29 1983-01-07 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin capacitor for monolithic integrated circuit
JPS6127352Y2 (en) * 1981-10-27 1986-08-14
JPS5864588U (en) * 1981-10-27 1983-04-30 本田技研工業株式会社 Motorcycle seat device
JPS5911665A (en) * 1982-07-12 1984-01-21 Nec Corp Semiconductor device
JPS6143860B2 (en) * 1983-03-31 1986-09-30 Tokyo Shibaura Electric Co
JPS59181662A (en) * 1983-03-31 1984-10-16 Toshiba Corp Semiconductor memory device and manufacture thereof
JPS6085578A (en) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd Manufacture of thin film photoelectric conversion element
JPS6085576A (en) * 1983-10-17 1985-05-15 Fuji Xerox Co Ltd Manufacture of thin film photoelectric conversion element
JPH0221664B2 (en) * 1983-10-17 1990-05-15 Fuji Xerox Co Ltd
JPH0221662B2 (en) * 1983-10-17 1990-05-15 Fuji Xerox Co Ltd
JPS62118559A (en) * 1985-11-18 1987-05-29 Nec Corp Semiconductor device
JPS62234360A (en) * 1985-11-29 1987-10-14 Hitachi Ltd Semiconductor device and its manufacture
JPS6323346A (en) * 1987-04-20 1988-01-30 Hitachi Ltd Semiconductor memory device
JPS63146471A (en) * 1987-11-20 1988-06-18 Agency Of Ind Science & Technol Manufacture of mis element
KR19980020885A (en) * 1996-09-12 1998-06-25 김광호 Capacitor Manufacturing Process

Also Published As

Publication number Publication date
JPS5950101B2 (en) 1984-12-06

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