JPS54155771A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS54155771A
JPS54155771A JP6466878A JP6466878A JPS54155771A JP S54155771 A JPS54155771 A JP S54155771A JP 6466878 A JP6466878 A JP 6466878A JP 6466878 A JP6466878 A JP 6466878A JP S54155771 A JPS54155771 A JP S54155771A
Authority
JP
Japan
Prior art keywords
layer
pattern
interval
etching
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6466878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6326536B2 (enrdf_load_stackoverflow
Inventor
Yoshimasa Kato
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6466878A priority Critical patent/JPS54155771A/ja
Publication of JPS54155771A publication Critical patent/JPS54155771A/ja
Publication of JPS6326536B2 publication Critical patent/JPS6326536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP6466878A 1978-05-29 1978-05-29 Pattern forming method Granted JPS54155771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6466878A JPS54155771A (en) 1978-05-29 1978-05-29 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6466878A JPS54155771A (en) 1978-05-29 1978-05-29 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS54155771A true JPS54155771A (en) 1979-12-08
JPS6326536B2 JPS6326536B2 (enrdf_load_stackoverflow) 1988-05-30

Family

ID=13264792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6466878A Granted JPS54155771A (en) 1978-05-29 1978-05-29 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS54155771A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130926A (en) * 1980-03-18 1981-10-14 Nec Corp Forming method of mask pattern
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JP2007227934A (ja) * 2006-02-24 2007-09-06 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法及び基板用パターン形成方法
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US7754591B2 (en) 2006-02-24 2010-07-13 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US20220189772A1 (en) * 2020-12-15 2022-06-16 Applied Materials, Inc. Directional modification of patterning structure to enhance pattern elongation process margin

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56130926A (en) * 1980-03-18 1981-10-14 Nec Corp Forming method of mask pattern
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JP2007227934A (ja) * 2006-02-24 2007-09-06 Hynix Semiconductor Inc 半導体素子の微細パターン形成方法及び基板用パターン形成方法
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US7754591B2 (en) 2006-02-24 2010-07-13 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
US20220189772A1 (en) * 2020-12-15 2022-06-16 Applied Materials, Inc. Directional modification of patterning structure to enhance pattern elongation process margin
US11984318B2 (en) * 2020-12-15 2024-05-14 Applied Materials, Inc. Directional modification of patterning structure to enhance pattern elongation process margin

Also Published As

Publication number Publication date
JPS6326536B2 (enrdf_load_stackoverflow) 1988-05-30

Similar Documents

Publication Publication Date Title
EP0095209A3 (en) Method of forming a resist mask resistant to plasma etching
JPS54155771A (en) Pattern forming method
US4362598A (en) Method of patterning a thick resist layer of polymeric plastic
JPS5797626A (en) Manufacture of semiconductor device
JPS5710249A (en) Manufacture of semiconductor device
JPS6459936A (en) Manufacture of integrated circuit
JPS5710989A (en) Pattern manufacture for jusephson-junction element
JPS57198632A (en) Fine pattern formation
JPS5568655A (en) Manufacturing method of wiring
JPS55138839A (en) Method of fabricating semiconductor device
JPS56130751A (en) Manufacture of mask
JPS5743425A (en) Forming method for fine pattern
JPS5772331A (en) Manufacture of semiconductor device
JPS54162460A (en) Electrode forming method
JPS5596654A (en) Method of fabricating semiconductor device
JPS5732375A (en) Etching method for thin film
JPS5797629A (en) Manufacture of semiconductor device
JPS5619054A (en) Metal photomask
JPS57141938A (en) Manufacture of semiconductor device
JPS56157026A (en) Formation of pattern
JPS5735860A (en) Preparation of photomask
JPS5539691A (en) Fabrication of fine pattern
JPS5452473A (en) Forming method for coating for fine pattern
JPS6462491A (en) Formation of metallic pattern
JPS5636120A (en) Manufacture of magnetic bubble device