JPS54153740A - Continuous vacuum treatment apparatus - Google Patents

Continuous vacuum treatment apparatus

Info

Publication number
JPS54153740A
JPS54153740A JP6165778A JP6165778A JPS54153740A JP S54153740 A JPS54153740 A JP S54153740A JP 6165778 A JP6165778 A JP 6165778A JP 6165778 A JP6165778 A JP 6165778A JP S54153740 A JPS54153740 A JP S54153740A
Authority
JP
Japan
Prior art keywords
chambers
chamber
treatment
outsides
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6165778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6144947B2 (enExample
Inventor
Chikara Hayashi
Ichiro Umetsu
Takashi Matsumoto
Tomoaki Fujinami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP6165778A priority Critical patent/JPS54153740A/ja
Publication of JPS54153740A publication Critical patent/JPS54153740A/ja
Publication of JPS6144947B2 publication Critical patent/JPS6144947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP6165778A 1978-05-25 1978-05-25 Continuous vacuum treatment apparatus Granted JPS54153740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6165778A JPS54153740A (en) 1978-05-25 1978-05-25 Continuous vacuum treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6165778A JPS54153740A (en) 1978-05-25 1978-05-25 Continuous vacuum treatment apparatus

Publications (2)

Publication Number Publication Date
JPS54153740A true JPS54153740A (en) 1979-12-04
JPS6144947B2 JPS6144947B2 (enExample) 1986-10-06

Family

ID=13177506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6165778A Granted JPS54153740A (en) 1978-05-25 1978-05-25 Continuous vacuum treatment apparatus

Country Status (1)

Country Link
JP (1) JPS54153740A (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS5893322A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS5895550A (ja) * 1982-11-01 1983-06-07 Shunpei Yamazaki 非単結晶半導体層形成用装置
JPS6010620A (ja) * 1983-06-29 1985-01-19 Fuji Electric Corp Res & Dev Ltd プラズマｃｖｄ法
JPS60138909A (ja) * 1983-12-27 1985-07-23 Semiconductor Energy Lab Co Ltd 気相反応被膜作製装置および作製方法
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
JPS61149476A (ja) * 1984-12-24 1986-07-08 Toshiba Corp スパツタリング装置
JPS62502050A (ja) * 1985-02-08 1987-08-13 ヒュ−レット・パッカ−ド・カンパニ− 基板上に複数個の薄膜層を付着する装置と方法
JPS63303059A (ja) * 1987-05-30 1988-12-09 Tokuda Seisakusho Ltd 真空処理装置
JPH02138731A (ja) * 1989-09-08 1990-05-28 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPH03209719A (ja) * 1990-06-22 1991-09-12 Semiconductor Energy Lab Co Ltd 気相反応被膜作製方法
JPH05121339A (ja) * 1992-03-26 1993-05-18 Semiconductor Energy Lab Co Ltd 被膜作製装置
JPH0774117A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
JPH0774118A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
JPH07307299A (ja) * 1994-12-27 1995-11-21 Semiconductor Energy Lab Co Ltd 気相反応被膜作製方法
JPH08274036A (ja) * 1996-01-26 1996-10-18 Semiconductor Energy Lab Co Ltd 気相反応被膜作製方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131461A (en) * 1975-05-13 1976-11-15 Ulvac Corp A vacuum treatment chamber apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131461A (en) * 1975-05-13 1976-11-15 Ulvac Corp A vacuum treatment chamber apparatus

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS5893322A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS5895550A (ja) * 1982-11-01 1983-06-07 Shunpei Yamazaki 非単結晶半導体層形成用装置
JPS6010620A (ja) * 1983-06-29 1985-01-19 Fuji Electric Corp Res & Dev Ltd プラズマｃｖｄ法
JPS60138909A (ja) * 1983-12-27 1985-07-23 Semiconductor Energy Lab Co Ltd 気相反応被膜作製装置および作製方法
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
JPS61149476A (ja) * 1984-12-24 1986-07-08 Toshiba Corp スパツタリング装置
JPS62502050A (ja) * 1985-02-08 1987-08-13 ヒュ−レット・パッカ−ド・カンパニ− 基板上に複数個の薄膜層を付着する装置と方法
JPS63303059A (ja) * 1987-05-30 1988-12-09 Tokuda Seisakusho Ltd 真空処理装置
JPH02138731A (ja) * 1989-09-08 1990-05-28 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPH03209719A (ja) * 1990-06-22 1991-09-12 Semiconductor Energy Lab Co Ltd 気相反応被膜作製方法
JPH05121339A (ja) * 1992-03-26 1993-05-18 Semiconductor Energy Lab Co Ltd 被膜作製装置
JPH0774117A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
JPH0774118A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
JPH07307299A (ja) * 1994-12-27 1995-11-21 Semiconductor Energy Lab Co Ltd 気相反応被膜作製方法
JPH08274036A (ja) * 1996-01-26 1996-10-18 Semiconductor Energy Lab Co Ltd 気相反応被膜作製方法

Also Published As

Publication number Publication date
JPS6144947B2 (enExample) 1986-10-06

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