JPS6435919A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number
JPS6435919A
JPS6435919A JP62191771A JP19177187A JPS6435919A JP S6435919 A JPS6435919 A JP S6435919A JP 62191771 A JP62191771 A JP 62191771A JP 19177187 A JP19177187 A JP 19177187A JP S6435919 A JPS6435919 A JP S6435919A
Authority
JP
Japan
Prior art keywords
semiconductor substrates
electrodes
yield
rear side
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62191771A
Other languages
Japanese (ja)
Inventor
Takashi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62191771A priority Critical patent/JPS6435919A/en
Publication of JPS6435919A publication Critical patent/JPS6435919A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To increase the yield while preventing the surface of semiconductor substrates from being polluted by providing bulkheads on the rear side of semiconductor substrates. CONSTITUTION:Holes 9 and facings 8 to be loaded with a pair of semiconductor substrates 4 are made on the upper electrodes 5a of a pair of electrodes 5a, 5b opposite to each other in a vacuum processing vessel 1 to load semiconductor substrates looking downward on the holes 9. Next, vertically movable bulkheads 3 are provided between heaters 2 and the upper electrodes 5a and then the rear side of electrode 6a is covered. The semiconductor substrates 4 are filmed by impressing high voltage from a discharging power supply 12 for discharging the space between the electrodes 5a and 5b to decompose reactive gas 11 while leading-in the reactive gas 11 from the lower electrode 5b provided with a gas leading-in channel. Through these procedures, the yield can be increased without polluting the semiconductor substrates 4.
JP62191771A 1987-07-30 1987-07-30 Plasma cvd device Pending JPS6435919A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62191771A JPS6435919A (en) 1987-07-30 1987-07-30 Plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62191771A JPS6435919A (en) 1987-07-30 1987-07-30 Plasma cvd device

Publications (1)

Publication Number Publication Date
JPS6435919A true JPS6435919A (en) 1989-02-07

Family

ID=16280250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62191771A Pending JPS6435919A (en) 1987-07-30 1987-07-30 Plasma cvd device

Country Status (1)

Country Link
JP (1) JPS6435919A (en)

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