JPS54136278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54136278A
JPS54136278A JP4450478A JP4450478A JPS54136278A JP S54136278 A JPS54136278 A JP S54136278A JP 4450478 A JP4450478 A JP 4450478A JP 4450478 A JP4450478 A JP 4450478A JP S54136278 A JPS54136278 A JP S54136278A
Authority
JP
Japan
Prior art keywords
transistor
accompanied
resistor
resistors
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4450478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146986B2 (enrdf_load_stackoverflow
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4450478A priority Critical patent/JPS54136278A/ja
Publication of JPS54136278A publication Critical patent/JPS54136278A/ja
Publication of JPS6146986B2 publication Critical patent/JPS6146986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP4450478A 1978-04-14 1978-04-14 Semiconductor device Granted JPS54136278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4450478A JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4450478A JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62202930A Division JPS63146469A (ja) 1987-08-14 1987-08-14 半導体装置

Publications (2)

Publication Number Publication Date
JPS54136278A true JPS54136278A (en) 1979-10-23
JPS6146986B2 JPS6146986B2 (enrdf_load_stackoverflow) 1986-10-16

Family

ID=12693373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4450478A Granted JPS54136278A (en) 1978-04-14 1978-04-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54136278A (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109375A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Mis type transistor protection circuit
JPS58199969A (ja) * 1982-05-15 1983-11-21 宗平　忠晴 駐輪ボツクス
JPS59112708A (ja) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp 入力保護回路
US4509067A (en) * 1981-06-23 1985-04-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit devices with protective means against overvoltages
JPS60142556A (ja) * 1983-12-28 1985-07-27 Toshiba Corp 入力保護回路
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Ｖｌｓｉ集積回路装置用の入力保護構成体
US4580063A (en) * 1981-12-04 1986-04-01 Sgs-Ates Componenti Elettronics S.P.A. Circuit for the protection of IGFETs from overvoltage
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
JPS6215851A (ja) * 1985-07-12 1987-01-24 Sanyo Electric Co Ltd 半導体装置
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4727405A (en) * 1985-11-27 1988-02-23 Nec Corporation Protective network
US4745450A (en) * 1984-03-02 1988-05-17 Zilog, Inc. Integrated circuit high voltage protection
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275187A (en) * 1975-12-18 1977-06-23 Mitsubishi Electric Corp Mos type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275187A (en) * 1975-12-18 1977-06-23 Mitsubishi Electric Corp Mos type semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109375A (en) * 1980-12-26 1982-07-07 Fujitsu Ltd Mis type transistor protection circuit
US4509067A (en) * 1981-06-23 1985-04-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit devices with protective means against overvoltages
US4580063A (en) * 1981-12-04 1986-04-01 Sgs-Ates Componenti Elettronics S.P.A. Circuit for the protection of IGFETs from overvoltage
JPS58199969A (ja) * 1982-05-15 1983-11-21 宗平　忠晴 駐輪ボツクス
JPS59112708A (ja) * 1982-12-18 1984-06-29 Mitsubishi Electric Corp 入力保護回路
JPS60142556A (ja) * 1983-12-28 1985-07-27 Toshiba Corp 入力保護回路
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
US4745450A (en) * 1984-03-02 1988-05-17 Zilog, Inc. Integrated circuit high voltage protection
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4952994A (en) * 1984-05-03 1990-08-28 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Ｖｌｓｉ集積回路装置用の入力保護構成体
US5017985A (en) * 1984-05-03 1991-05-21 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
JPS6215851A (ja) * 1985-07-12 1987-01-24 Sanyo Electric Co Ltd 半導体装置
US4727405A (en) * 1985-11-27 1988-02-23 Nec Corporation Protective network
US5019883A (en) * 1987-01-28 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Input protective apparatus of semiconductor device
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process

Also Published As

Publication number Publication date
JPS6146986B2 (enrdf_load_stackoverflow) 1986-10-16

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