JPS54109785A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54109785A
JPS54109785A JP1715578A JP1715578A JPS54109785A JP S54109785 A JPS54109785 A JP S54109785A JP 1715578 A JP1715578 A JP 1715578A JP 1715578 A JP1715578 A JP 1715578A JP S54109785 A JPS54109785 A JP S54109785A
Authority
JP
Japan
Prior art keywords
film
matching
self
selectively
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1715578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135710B2 (enExample
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1715578A priority Critical patent/JPS54109785A/ja
Priority to DE2847305A priority patent/DE2847305C2/de
Publication of JPS54109785A publication Critical patent/JPS54109785A/ja
Publication of JPS6135710B2 publication Critical patent/JPS6135710B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP1715578A 1977-10-31 1978-02-16 Semiconductor device Granted JPS54109785A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1715578A JPS54109785A (en) 1978-02-16 1978-02-16 Semiconductor device
DE2847305A DE2847305C2 (de) 1977-10-31 1978-10-31 Verfahren zur Herstellung einer Halbleiterspeichervorrichtung mit schwebender Gateelektrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1715578A JPS54109785A (en) 1978-02-16 1978-02-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54109785A true JPS54109785A (en) 1979-08-28
JPS6135710B2 JPS6135710B2 (enExample) 1986-08-14

Family

ID=11936081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1715578A Granted JPS54109785A (en) 1977-10-31 1978-02-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54109785A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171712A (ja) * 1987-12-26 1989-07-06 Osaka Diamond Ind Co Ltd 微細孔の加工法並びに加工用ドリル
JP7010061B2 (ja) 2018-03-01 2022-01-26 株式会社島津製作所 試料の調製方法および分析方法
JP6992705B2 (ja) 2018-08-24 2022-01-13 株式会社島津製作所 分析用試料の調製方法、分析方法および分析用試料の調製用キット
JP7047669B2 (ja) 2018-08-24 2022-04-05 株式会社島津製作所 分析用試料の調製方法、分析方法および分析用試料の調製用キット
JP7087900B2 (ja) 2018-10-03 2022-06-21 株式会社島津製作所 分析用試料の調製方法、分析方法および分析用試料の調製用キット
WO2021010221A1 (ja) 2019-07-12 2021-01-21 株式会社島津製作所 分析用試料の調製方法、分析方法および分析用試料の調製用キット
WO2021014958A1 (ja) * 2019-07-23 2021-01-28 株式会社島津製作所 質量分析方法、質量分析装置およびプログラム
JP7363359B2 (ja) 2019-10-21 2023-10-18 株式会社島津製作所 分析用試料の調製方法、分析方法および分析用試料の調製用キット

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075775A (enExample) * 1973-11-06 1975-06-21
JPS5259585A (en) * 1975-10-29 1977-05-17 Intel Corp Method of producing mos polycrystalline ic

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075775A (enExample) * 1973-11-06 1975-06-21
JPS5259585A (en) * 1975-10-29 1977-05-17 Intel Corp Method of producing mos polycrystalline ic

Also Published As

Publication number Publication date
JPS6135710B2 (enExample) 1986-08-14

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