JPS54107291A - Avalanche photo diode - Google Patents

Avalanche photo diode

Info

Publication number
JPS54107291A
JPS54107291A JP1425978A JP1425978A JPS54107291A JP S54107291 A JPS54107291 A JP S54107291A JP 1425978 A JP1425978 A JP 1425978A JP 1425978 A JP1425978 A JP 1425978A JP S54107291 A JPS54107291 A JP S54107291A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
incident
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1425978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6214112B2 (enrdf_load_stackoverflow
Inventor
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1425978A priority Critical patent/JPS54107291A/ja
Publication of JPS54107291A publication Critical patent/JPS54107291A/ja
Publication of JPS6214112B2 publication Critical patent/JPS6214112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP1425978A 1978-02-10 1978-02-10 Avalanche photo diode Granted JPS54107291A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1425978A JPS54107291A (en) 1978-02-10 1978-02-10 Avalanche photo diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1425978A JPS54107291A (en) 1978-02-10 1978-02-10 Avalanche photo diode

Publications (2)

Publication Number Publication Date
JPS54107291A true JPS54107291A (en) 1979-08-22
JPS6214112B2 JPS6214112B2 (enrdf_load_stackoverflow) 1987-03-31

Family

ID=11856084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1425978A Granted JPS54107291A (en) 1978-02-10 1978-02-10 Avalanche photo diode

Country Status (1)

Country Link
JP (1) JPS54107291A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656494A (en) * 1984-05-31 1987-04-07 Fujitsu Limited Avalanche multiplication photodiode having a buried structure
JPS62169381A (ja) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd 半導体装置
FR2641647A1 (fr) * 1989-01-12 1990-07-13 Rca Inc Photodiode a avalanche au silicium a faible bruit de multiplication
WO2010057835A3 (de) * 2008-11-21 2010-09-16 Ketek Gmbh Strahlungsdetektor, verwendung eines strahlungsdetektors und verfahren zur herstellung eines strahlungsdetektors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656494A (en) * 1984-05-31 1987-04-07 Fujitsu Limited Avalanche multiplication photodiode having a buried structure
JPS62169381A (ja) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd 半導体装置
FR2641647A1 (fr) * 1989-01-12 1990-07-13 Rca Inc Photodiode a avalanche au silicium a faible bruit de multiplication
WO2010057835A3 (de) * 2008-11-21 2010-09-16 Ketek Gmbh Strahlungsdetektor, verwendung eines strahlungsdetektors und verfahren zur herstellung eines strahlungsdetektors

Also Published As

Publication number Publication date
JPS6214112B2 (enrdf_load_stackoverflow) 1987-03-31

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