WO2010057835A3 - Strahlungsdetektor, verwendung eines strahlungsdetektors und verfahren zur herstellung eines strahlungsdetektors - Google Patents
Strahlungsdetektor, verwendung eines strahlungsdetektors und verfahren zur herstellung eines strahlungsdetektors Download PDFInfo
- Publication number
- WO2010057835A3 WO2010057835A3 PCT/EP2009/065162 EP2009065162W WO2010057835A3 WO 2010057835 A3 WO2010057835 A3 WO 2010057835A3 EP 2009065162 W EP2009065162 W EP 2009065162W WO 2010057835 A3 WO2010057835 A3 WO 2010057835A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radiation detector
- electrode region
- semiconductor body
- upper side
- producing
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000002800 charge carrier Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Light Receiving Elements (AREA)
Abstract
In mindestens einer Ausführungsform des Strahlungsdetektors (100) umfasst dieser zumindest eine Detektorzelle (1), wobei ein Halbleiterkörper (2) der Detektorzelle (1) einen ersten Elektrodenbereich (3) aufweist. Weiterhin umfasst der Halbleiterkörper (2) einen zweiten Elektrodenbereich (5), der sich weiter von einer Oberseite (30) des Halbleiterkörpers (2) entfernt befindet als der erste Elektrodenbereich (3). Zwischen dem ersten Elektrodenbereich (3) und dem zweiten Elektrodenbereich (5) befindet sich eine aktive Zone (4), die zur Erzeugung freier Ladungsträger mittels einer Lawinenmultiplikation eingerichtet ist. In Draufsicht auf die Oberseite (30) des Halbleiterkörper (2) gesehen erstreckt sich, außerhalb der aktiven Zone (4) und/oder an einen Rand (46) der aktiven Zone (4), der zweite Elektrodenbereich (5) weg von der Oberseite (30).
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008058492.4 | 2008-11-21 | ||
DE102008058492 | 2008-11-21 | ||
DE102009017505.9 | 2009-04-15 | ||
DE102009017505.9A DE102009017505B4 (de) | 2008-11-21 | 2009-04-15 | Strahlungsdetektor, Verwendung eines Strahlungsdetektors und Verfahren zur Herstellung eines Strahlungsdetektors |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2010057835A2 WO2010057835A2 (de) | 2010-05-27 |
WO2010057835A3 true WO2010057835A3 (de) | 2010-09-16 |
Family
ID=42134165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2009/065162 WO2010057835A2 (de) | 2008-11-21 | 2009-11-13 | Strahlungsdetektor, verwendung eines strahlungsdetektors und verfahren zur herstellung eines strahlungsdetektors |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102009017505B4 (de) |
WO (1) | WO2010057835A2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202010012735U1 (de) | 2010-09-17 | 2011-04-14 | Ketek Gmbh | Strahlungsdetektor und Verwendung eines Strahlungsdetektors |
DE102011110689B4 (de) | 2011-08-16 | 2015-07-09 | Ketek Gmbh | Strahlungsdetektor und Verwendung desselben |
JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
DE102012215637A1 (de) | 2012-09-04 | 2014-03-06 | Siemens Aktiengesellschaft | Strahlungsdetektor, Verfahren zu seiner Herstellung und seine Verwendung |
DE102016114204B4 (de) | 2016-08-01 | 2018-12-20 | Ketek Gmbh | Strahlungsdetektor und Verfahren zur Herstellung einer Mehrzahl von Strahlungsdetektoren |
EP3640682B1 (de) | 2018-10-19 | 2021-12-29 | Ketek GmbH | Strahlungsdetektor, verfahren zur herstellung eines strahlungsdetektors und verfahren zum betrieb eines strahlungsdetektors |
CN113985470A (zh) * | 2021-10-28 | 2022-01-28 | 清华大学 | 高纯锗探测器 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769109A (en) * | 1972-04-19 | 1973-10-30 | Bell Telephone Labor Inc | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
FR2331884A1 (fr) * | 1975-11-11 | 1977-06-10 | Philips Nv | Procede pour fabriquer un dispositif semi-conducteur, et dispositif fabrique de la sorte |
JPS54107291A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Avalanche photo diode |
JPS5572083A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
DE3003391A1 (de) * | 1980-01-31 | 1981-08-06 | Josef Dipl.-Phys. Dr. 8041 Fahrenzhausen Kemmer | Passivierter halbleiter pn-uebergang mit hoher spannungsfestigkeit |
US4579626A (en) * | 1985-02-28 | 1986-04-01 | Rca Corporation | Method of making a charge-coupled device imager |
JPS6180875A (ja) * | 1984-09-27 | 1986-04-24 | Nec Corp | 半導体装置 |
JPS61191082A (ja) * | 1985-02-20 | 1986-08-25 | Fujitsu Ltd | 半導体受光素子 |
JPH0738140A (ja) * | 1993-07-19 | 1995-02-07 | Hamamatsu Photonics Kk | アバランシェホトダイオード |
EP0697743A1 (de) * | 1994-08-17 | 1996-02-21 | Seiko Instruments Inc. | Lawinen-Fotodiode und Verbindung mit einer integrierten Schaltungspackung und Verfahren der Herstellung |
US5719414A (en) * | 1993-03-16 | 1998-02-17 | Sato; Keiji | Photoelectric conversion semiconductor device with insulation film |
JPH1065202A (ja) * | 1996-06-29 | 1998-03-06 | Hyundai Electron Ind Co Ltd | アバランシェフォトダイオード及びその製造方法 |
EP1755171A1 (de) * | 2004-05-05 | 2007-02-21 | DOLGOSHEIN, Boris Anatolievich | Silizium-fotovervielfacher (varianten) und zelle dafür |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3860454A (en) * | 1973-06-27 | 1975-01-14 | Ibm | Field effect transistor structure for minimizing parasitic inversion and process for fabricating |
DE102004022948B4 (de) * | 2004-05-10 | 2006-06-01 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Strahlungsdetektor |
US8093624B1 (en) * | 2006-02-15 | 2012-01-10 | Massachusetts Institute Of Technology | High fill-factor avalanche photodiode |
-
2009
- 2009-04-15 DE DE102009017505.9A patent/DE102009017505B4/de active Active
- 2009-11-13 WO PCT/EP2009/065162 patent/WO2010057835A2/de active Application Filing
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769109A (en) * | 1972-04-19 | 1973-10-30 | Bell Telephone Labor Inc | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
FR2331884A1 (fr) * | 1975-11-11 | 1977-06-10 | Philips Nv | Procede pour fabriquer un dispositif semi-conducteur, et dispositif fabrique de la sorte |
JPS54107291A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Avalanche photo diode |
JPS5572083A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
DE3003391A1 (de) * | 1980-01-31 | 1981-08-06 | Josef Dipl.-Phys. Dr. 8041 Fahrenzhausen Kemmer | Passivierter halbleiter pn-uebergang mit hoher spannungsfestigkeit |
JPS6180875A (ja) * | 1984-09-27 | 1986-04-24 | Nec Corp | 半導体装置 |
JPS61191082A (ja) * | 1985-02-20 | 1986-08-25 | Fujitsu Ltd | 半導体受光素子 |
US4579626A (en) * | 1985-02-28 | 1986-04-01 | Rca Corporation | Method of making a charge-coupled device imager |
US5719414A (en) * | 1993-03-16 | 1998-02-17 | Sato; Keiji | Photoelectric conversion semiconductor device with insulation film |
JPH0738140A (ja) * | 1993-07-19 | 1995-02-07 | Hamamatsu Photonics Kk | アバランシェホトダイオード |
EP0697743A1 (de) * | 1994-08-17 | 1996-02-21 | Seiko Instruments Inc. | Lawinen-Fotodiode und Verbindung mit einer integrierten Schaltungspackung und Verfahren der Herstellung |
JPH1065202A (ja) * | 1996-06-29 | 1998-03-06 | Hyundai Electron Ind Co Ltd | アバランシェフォトダイオード及びその製造方法 |
EP1755171A1 (de) * | 2004-05-05 | 2007-02-21 | DOLGOSHEIN, Boris Anatolievich | Silizium-fotovervielfacher (varianten) und zelle dafür |
Also Published As
Publication number | Publication date |
---|---|
DE102009017505B4 (de) | 2014-07-10 |
DE102009017505A1 (de) | 2010-06-02 |
WO2010057835A2 (de) | 2010-05-27 |
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