JPS54101230A - Dynamic mos memory circuit - Google Patents

Dynamic mos memory circuit

Info

Publication number
JPS54101230A
JPS54101230A JP797678A JP797678A JPS54101230A JP S54101230 A JPS54101230 A JP S54101230A JP 797678 A JP797678 A JP 797678A JP 797678 A JP797678 A JP 797678A JP S54101230 A JPS54101230 A JP S54101230A
Authority
JP
Japan
Prior art keywords
memory circuit
pair
power supply
lines
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP797678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6149760B2 (enrdf_load_stackoverflow
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP797678A priority Critical patent/JPS54101230A/ja
Publication of JPS54101230A publication Critical patent/JPS54101230A/ja
Publication of JPS6149760B2 publication Critical patent/JPS6149760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP797678A 1978-01-26 1978-01-26 Dynamic mos memory circuit Granted JPS54101230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP797678A JPS54101230A (en) 1978-01-26 1978-01-26 Dynamic mos memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP797678A JPS54101230A (en) 1978-01-26 1978-01-26 Dynamic mos memory circuit

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60221272A Division JPS6192497A (ja) 1985-10-04 1985-10-04 メモリ回路
JP61025368A Division JPS61180996A (ja) 1986-02-07 1986-02-07 ダイナミツクmosメモリ装置

Publications (2)

Publication Number Publication Date
JPS54101230A true JPS54101230A (en) 1979-08-09
JPS6149760B2 JPS6149760B2 (enrdf_load_stackoverflow) 1986-10-30

Family

ID=11680476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP797678A Granted JPS54101230A (en) 1978-01-26 1978-01-26 Dynamic mos memory circuit

Country Status (1)

Country Link
JP (1) JPS54101230A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
JPS5823388A (ja) * 1981-08-05 1983-02-12 Nec Corp メモリ装置
US4813022A (en) * 1986-12-26 1989-03-14 Kabushiki Kaisha Toshiba Static memory with pull-up circuit for pulling-up a potential on a bit line
JP2007172775A (ja) * 2005-12-26 2007-07-05 Toshiba Corp センスアンプ及び半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149642A (enrdf_load_stackoverflow) * 1974-08-28 1976-04-30 Siemens Ag
JPS5221733A (en) * 1975-08-11 1977-02-18 Nippon Telegr & Teleph Corp <Ntt> Microsignal detection circuit
JPS52152129A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Memory signal detection-amplification unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149642A (enrdf_load_stackoverflow) * 1974-08-28 1976-04-30 Siemens Ag
JPS5221733A (en) * 1975-08-11 1977-02-18 Nippon Telegr & Teleph Corp <Ntt> Microsignal detection circuit
JPS52152129A (en) * 1976-06-14 1977-12-17 Nippon Telegr & Teleph Corp <Ntt> Memory signal detection-amplification unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755592A (en) * 1980-09-18 1982-04-02 Nec Corp Memory device
JPS5823388A (ja) * 1981-08-05 1983-02-12 Nec Corp メモリ装置
US4813022A (en) * 1986-12-26 1989-03-14 Kabushiki Kaisha Toshiba Static memory with pull-up circuit for pulling-up a potential on a bit line
JP2007172775A (ja) * 2005-12-26 2007-07-05 Toshiba Corp センスアンプ及び半導体記憶装置

Also Published As

Publication number Publication date
JPS6149760B2 (enrdf_load_stackoverflow) 1986-10-30

Similar Documents

Publication Publication Date Title
KR970067772A (ko) 반도체 기억장치
JPS5572863A (en) Sense amplifier
JPS5661088A (en) Semiconductor memory device
EP0332135A3 (en) Nonvolatile memory circuit device with low power consumption and wide operating voltage range
JPS54101230A (en) Dynamic mos memory circuit
JPS57203290A (en) Ic memory
EP0710959A3 (en) Semiconductor device equipped with simple stable switching circuit for selectively supplying different power voltages
IE802524L (en) Bootstrap circuit
JPS5712483A (en) Transistor circuit
EP0187246A3 (en) Precharge circuit for bit lines of semiconductor memory
JPS5517869A (en) Semiconductor memory device
JPS5694574A (en) Complementary mos sense circuit
JPS55132589A (en) Semiconductor memory unit
JPS54100233A (en) Integrated memory
JPS5538664A (en) Nonvolatile memory circuit
JPS5778695A (en) Semiconductor storage device
JPS5558891A (en) Semiconductor memory unit
JPS57176590A (en) Memory device
JPS55118666A (en) Semiconductor device
JPS57158086A (en) Semiconductor memory device
JPS5616995A (en) Memory circuit
JPS5589983A (en) Static memory cell
JPS5692A (en) Semiconductor memory circuit device
JPS57203288A (en) Memory circuit
JPS56127997A (en) Read-only memory cell