JPS54101230A - Dynamic mos memory circuit - Google Patents
Dynamic mos memory circuitInfo
- Publication number
- JPS54101230A JPS54101230A JP797678A JP797678A JPS54101230A JP S54101230 A JPS54101230 A JP S54101230A JP 797678 A JP797678 A JP 797678A JP 797678 A JP797678 A JP 797678A JP S54101230 A JPS54101230 A JP S54101230A
- Authority
- JP
- Japan
- Prior art keywords
- memory circuit
- pair
- power supply
- lines
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP797678A JPS54101230A (en) | 1978-01-26 | 1978-01-26 | Dynamic mos memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP797678A JPS54101230A (en) | 1978-01-26 | 1978-01-26 | Dynamic mos memory circuit |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60221272A Division JPS6192497A (ja) | 1985-10-04 | 1985-10-04 | メモリ回路 |
JP61025368A Division JPS61180996A (ja) | 1986-02-07 | 1986-02-07 | ダイナミツクmosメモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54101230A true JPS54101230A (en) | 1979-08-09 |
JPS6149760B2 JPS6149760B2 (enrdf_load_stackoverflow) | 1986-10-30 |
Family
ID=11680476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP797678A Granted JPS54101230A (en) | 1978-01-26 | 1978-01-26 | Dynamic mos memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54101230A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5755592A (en) * | 1980-09-18 | 1982-04-02 | Nec Corp | Memory device |
JPS5823388A (ja) * | 1981-08-05 | 1983-02-12 | Nec Corp | メモリ装置 |
US4813022A (en) * | 1986-12-26 | 1989-03-14 | Kabushiki Kaisha Toshiba | Static memory with pull-up circuit for pulling-up a potential on a bit line |
JP2007172775A (ja) * | 2005-12-26 | 2007-07-05 | Toshiba Corp | センスアンプ及び半導体記憶装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5149642A (enrdf_load_stackoverflow) * | 1974-08-28 | 1976-04-30 | Siemens Ag | |
JPS5221733A (en) * | 1975-08-11 | 1977-02-18 | Nippon Telegr & Teleph Corp <Ntt> | Microsignal detection circuit |
JPS52152129A (en) * | 1976-06-14 | 1977-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Memory signal detection-amplification unit |
-
1978
- 1978-01-26 JP JP797678A patent/JPS54101230A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5149642A (enrdf_load_stackoverflow) * | 1974-08-28 | 1976-04-30 | Siemens Ag | |
JPS5221733A (en) * | 1975-08-11 | 1977-02-18 | Nippon Telegr & Teleph Corp <Ntt> | Microsignal detection circuit |
JPS52152129A (en) * | 1976-06-14 | 1977-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Memory signal detection-amplification unit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5755592A (en) * | 1980-09-18 | 1982-04-02 | Nec Corp | Memory device |
JPS5823388A (ja) * | 1981-08-05 | 1983-02-12 | Nec Corp | メモリ装置 |
US4813022A (en) * | 1986-12-26 | 1989-03-14 | Kabushiki Kaisha Toshiba | Static memory with pull-up circuit for pulling-up a potential on a bit line |
JP2007172775A (ja) * | 2005-12-26 | 2007-07-05 | Toshiba Corp | センスアンプ及び半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6149760B2 (enrdf_load_stackoverflow) | 1986-10-30 |
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