JPS54100257A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPS54100257A JPS54100257A JP611978A JP611978A JPS54100257A JP S54100257 A JPS54100257 A JP S54100257A JP 611978 A JP611978 A JP 611978A JP 611978 A JP611978 A JP 611978A JP S54100257 A JPS54100257 A JP S54100257A
- Authority
- JP
- Japan
- Prior art keywords
- intensity
- temperature
- lead frame
- chrome
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP611978A JPS54100257A (en) | 1978-01-25 | 1978-01-25 | Lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP611978A JPS54100257A (en) | 1978-01-25 | 1978-01-25 | Lead frame |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54100257A true JPS54100257A (en) | 1979-08-07 |
JPS6342415B2 JPS6342415B2 (ja) | 1988-08-23 |
Family
ID=11629610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP611978A Granted JPS54100257A (en) | 1978-01-25 | 1978-01-25 | Lead frame |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54100257A (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57109357A (en) * | 1980-12-26 | 1982-07-07 | Nippon Mining Co Ltd | Copper alloy for semiconductor device lead |
JPS58108761A (ja) * | 1981-12-23 | 1983-06-28 | Toshiba Corp | 電子部品 |
JPS58141544A (ja) * | 1982-02-17 | 1983-08-22 | Toshiba Corp | 電子部品 |
JPS59117144A (ja) * | 1982-12-23 | 1984-07-06 | Toshiba Corp | リ−ドフレ−ムおよびその製造方法 |
JPS59145745A (ja) * | 1983-12-13 | 1984-08-21 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
JPS59145746A (ja) * | 1983-12-13 | 1984-08-21 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
JPS59145749A (ja) * | 1983-12-13 | 1984-08-21 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
JPS59193233A (ja) * | 1983-04-15 | 1984-11-01 | Toshiba Corp | 銅合金 |
JPH03115547A (ja) * | 1990-08-31 | 1991-05-16 | Toshiba Corp | 電子部品の製造方法 |
JP2000226273A (ja) * | 1999-02-05 | 2000-08-15 | Plansee Ag | 熱的に高負荷可能な複合構造部材の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503573A (ja) * | 1973-05-14 | 1975-01-14 | ||
JPS50122418A (ja) * | 1974-03-13 | 1975-09-26 | ||
JPS5278621A (en) * | 1975-12-26 | 1977-07-02 | Tamagawa Kikai Kinzoku Kk | Copper alloy for lead frames of semiconductor elements |
JPS52128825A (en) * | 1976-04-22 | 1977-10-28 | Sumitomo Electric Ind Ltd | Copper alloy for lead material |
JPS5461026A (en) * | 1977-10-24 | 1979-05-17 | Sumitomo Electric Ind Ltd | Copper alloy for lead of semiconductor device |
JPS6038453A (ja) * | 1983-08-11 | 1985-02-28 | Nippon Shokubai Kagaku Kogyo Co Ltd | 速溶性フマ−ル酸組成物 |
-
1978
- 1978-01-25 JP JP611978A patent/JPS54100257A/ja active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503573A (ja) * | 1973-05-14 | 1975-01-14 | ||
JPS50122418A (ja) * | 1974-03-13 | 1975-09-26 | ||
JPS5278621A (en) * | 1975-12-26 | 1977-07-02 | Tamagawa Kikai Kinzoku Kk | Copper alloy for lead frames of semiconductor elements |
JPS52128825A (en) * | 1976-04-22 | 1977-10-28 | Sumitomo Electric Ind Ltd | Copper alloy for lead material |
JPS5461026A (en) * | 1977-10-24 | 1979-05-17 | Sumitomo Electric Ind Ltd | Copper alloy for lead of semiconductor device |
JPS6038453A (ja) * | 1983-08-11 | 1985-02-28 | Nippon Shokubai Kagaku Kogyo Co Ltd | 速溶性フマ−ル酸組成物 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6213823B2 (ja) * | 1980-12-26 | 1987-03-28 | Nippon Mining Co | |
JPS57109357A (en) * | 1980-12-26 | 1982-07-07 | Nippon Mining Co Ltd | Copper alloy for semiconductor device lead |
JPS58108761A (ja) * | 1981-12-23 | 1983-06-28 | Toshiba Corp | 電子部品 |
JPS6251503B2 (ja) * | 1982-02-17 | 1987-10-30 | Tokyo Shibaura Electric Co | |
JPS58141544A (ja) * | 1982-02-17 | 1983-08-22 | Toshiba Corp | 電子部品 |
JPS59117144A (ja) * | 1982-12-23 | 1984-07-06 | Toshiba Corp | リ−ドフレ−ムおよびその製造方法 |
JPH0118977B2 (ja) * | 1982-12-23 | 1989-04-10 | Tokyo Shibaura Electric Co | |
JPS59193233A (ja) * | 1983-04-15 | 1984-11-01 | Toshiba Corp | 銅合金 |
JPH059502B2 (ja) * | 1983-04-15 | 1993-02-05 | Tokyo Shibaura Electric Co | |
JPS59145745A (ja) * | 1983-12-13 | 1984-08-21 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
JPS6215621B2 (ja) * | 1983-12-13 | 1987-04-08 | Nippon Mining Co | |
JPS6215622B2 (ja) * | 1983-12-13 | 1987-04-08 | Nippon Mining Co | |
JPS6239218B2 (ja) * | 1983-12-13 | 1987-08-21 | Nippon Mining Co | |
JPS59145749A (ja) * | 1983-12-13 | 1984-08-21 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
JPS59145746A (ja) * | 1983-12-13 | 1984-08-21 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
JPH03115547A (ja) * | 1990-08-31 | 1991-05-16 | Toshiba Corp | 電子部品の製造方法 |
JP2000226273A (ja) * | 1999-02-05 | 2000-08-15 | Plansee Ag | 熱的に高負荷可能な複合構造部材の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6342415B2 (ja) | 1988-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52128821A (en) | Preparation of high tensile steel having superior low temperature toughness and yield point above 40 kg/pp2 | |
JPS54100257A (en) | Lead frame | |
JPS5441176A (en) | Semiconductor strain measuring device | |
JPS5337383A (en) | Semiconductor integrated circuit | |
JPS5295173A (en) | Lead frame | |
JPS52120913A (en) | Heat treatment for improving high temperature low cycle fatigue strength of nickel base cast alloy | |
JPS52150327A (en) | Lead wire and its production method | |
JPS5211769A (en) | Method of adhering semiconductor proper and semiconductor holder | |
JPS54119328A (en) | Copper alloy for lead frames | |
JPS5233143A (en) | Compressive molten bath method by industive heat way | |
JPS54114078A (en) | Lead material for semiconductor apparatus | |
JPS51114870A (en) | Semiconductor device manufacturing method | |
JPS5236980A (en) | Heat sink for semiconductor devices | |
JPS53142315A (en) | Manufacture of cu-ni-sn alloy material | |
JPS5230163A (en) | Method for junction of semiconductor parts | |
JPS5221212A (en) | Mold copper material having high heat conductivity | |
JPS53128986A (en) | Manufacture of semiconductor device | |
JPS5231926A (en) | Manufacturing method of b -c alloy having uniform inner stress | |
JPS5217306A (en) | Heat treatment method for cast titanium alloy | |
JPS5394885A (en) | Mount structure for semiconductor laser element | |
JPS5432972A (en) | Fusion-welding method for semiconductor chip | |
JPS5511137A (en) | Corrosion resistant structural aluminum alloy material | |
JPS52132778A (en) | Manufacture for semiconductor device | |
JPS54153569A (en) | Heat treatment method for semiconductor wafer | |
JPS5321034A (en) | Flexible tube made of copper alloy and its preparation |