JPS53128986A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS53128986A JPS53128986A JP4352777A JP4352777A JPS53128986A JP S53128986 A JPS53128986 A JP S53128986A JP 4352777 A JP4352777 A JP 4352777A JP 4352777 A JP4352777 A JP 4352777A JP S53128986 A JPS53128986 A JP S53128986A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- substrate
- decrease
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the amount of the heavy metal to be mixed into the substrate as well as to decrease the crystal fault caused through the thermal treatment in the process during which the element or the circuit is formed to the semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4352777A JPS53128986A (en) | 1977-04-18 | 1977-04-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4352777A JPS53128986A (en) | 1977-04-18 | 1977-04-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53128986A true JPS53128986A (en) | 1978-11-10 |
Family
ID=12666207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4352777A Pending JPS53128986A (en) | 1977-04-18 | 1977-04-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53128986A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127368A (en) * | 1982-01-18 | 1983-07-29 | フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | Memory cell implanted with ions for high integration ram |
-
1977
- 1977-04-18 JP JP4352777A patent/JPS53128986A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58127368A (en) * | 1982-01-18 | 1983-07-29 | フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | Memory cell implanted with ions for high integration ram |
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