JPS5393781A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5393781A
JPS5393781A JP722877A JP722877A JPS5393781A JP S5393781 A JPS5393781 A JP S5393781A JP 722877 A JP722877 A JP 722877A JP 722877 A JP722877 A JP 722877A JP S5393781 A JPS5393781 A JP S5393781A
Authority
JP
Japan
Prior art keywords
semiconductor device
flaming
phenomena
semiconductor element
electrodes provided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP722877A
Other languages
English (en)
Inventor
Yoshiaki Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP722877A priority Critical patent/JPS5393781A/ja
Priority to US05/865,491 priority patent/US4169271A/en
Priority to GB54169/77A priority patent/GB1547129A/en
Priority to DE2758890A priority patent/DE2758890C3/de
Publication of JPS5393781A publication Critical patent/JPS5393781A/ja
Pending legal-status Critical Current

Links

Classifications

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    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20758—Diameter ranges larger or equal to 80 microns less than 90 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20759—Diameter ranges larger or equal to 90 microns less than 100 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Fuses (AREA)
  • Wire Bonding (AREA)
JP722877A 1977-01-27 1977-01-27 Semiconductor device Pending JPS5393781A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP722877A JPS5393781A (en) 1977-01-27 1977-01-27 Semiconductor device
US05/865,491 US4169271A (en) 1977-01-27 1977-12-29 Semiconductor device including a thermal fuse encapsulated in a droplet of silicone rubber
GB54169/77A GB1547129A (en) 1977-01-27 1977-12-29 Semiconductor device inclucing a thermal fuse
DE2758890A DE2758890C3 (de) 1977-01-27 1977-12-30 Halbleiterbauelement mit thermischer Sicherung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP722877A JPS5393781A (en) 1977-01-27 1977-01-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5393781A true JPS5393781A (en) 1978-08-17

Family

ID=11660126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP722877A Pending JPS5393781A (en) 1977-01-27 1977-01-27 Semiconductor device

Country Status (4)

Country Link
US (1) US4169271A (ja)
JP (1) JPS5393781A (ja)
DE (1) DE2758890C3 (ja)
GB (1) GB1547129A (ja)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8002634A (nl) * 1980-05-08 1981-12-01 Philips Nv Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
SE428081B (sv) * 1981-10-07 1983-05-30 Ericsson Telefon Ab L M Tilledningsram for en elektretmikrofon
CA1177538A (en) * 1981-12-04 1984-11-06 Canadian General Electric Company Limited Capacitive signal coupler
DE3327960A1 (de) * 1983-08-03 1985-02-14 Telefunken electronic GmbH, 7100 Heilbronn Halbleiteranordnung in einem isolierstoffgehaeuse
JPH0627959Y2 (ja) * 1988-10-20 1994-07-27 ローム株式会社 ダイオード
DE3406542A1 (de) * 1984-02-23 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen eines halbleiterbauelementes
JPS60238817A (ja) * 1984-05-12 1985-11-27 Citizen Watch Co Ltd 液晶表示装置
JPS6389685A (ja) * 1986-10-03 1988-04-20 Toagosei Chem Ind Co Ltd アルミニウムの腐食防止方法
JP2593471B2 (ja) * 1987-03-11 1997-03-26 株式会社東芝 半導体装置
US4893171A (en) * 1988-03-30 1990-01-09 Director General, Agenty Of Industrial Science And Technology Semiconductor device with resin bonding to support structure
JPH0289854U (ja) * 1988-12-27 1990-07-17
JP2738168B2 (ja) * 1991-06-19 1998-04-08 日本電気株式会社 ヒューズ付きチップ状固体電解コンデンサ
JP3459291B2 (ja) * 1993-09-21 2003-10-20 ローム株式会社 半導体チップを備えた電子部品
US5644281A (en) * 1992-04-07 1997-07-01 Rohm Co., Ltd. Electronic component incorporating solder fuse wire
US5446436A (en) * 1992-11-04 1995-08-29 Space Systems/Loral, Inc. High voltage high power arc suppressing fuse
JPH0864750A (ja) * 1994-08-23 1996-03-08 Toshiba Corp 半導体装置
JP3877340B2 (ja) * 1994-08-29 2007-02-07 ローム株式会社 安全ヒューズ付パッケージ型固体電解コンデンサ
DE4435255A1 (de) * 1994-10-01 1996-04-04 Abb Management Ag Verfahren zur Fehlerbehebung in einer Stromrichterschaltungsanordnung
DE19752196C1 (de) * 1997-11-25 1999-02-11 Siemens Ag Halbleiterbauelement mit definiertem Verhalten bei einem Ausfall und Verfahren zur Herstellung eines solchen
DE19833224B4 (de) * 1998-07-23 2009-02-26 Infineon Technologies Ag Schaltungsanordnung zum Schutz einer elektrischen Last
DE10007209A1 (de) * 2000-02-17 2001-09-06 Bosch Gmbh Robert Halbleiter-Leistungsbauelement mit Schmelzsicherung
US6606228B1 (en) 2000-11-27 2003-08-12 Ametek, Inc. Fault detection circuit for use with a power control device
DE102006009236A1 (de) * 2006-02-28 2007-09-06 Infineon Technologies Ag Vorrichtung und Verfahren zur temperaturunterbrechenden Absicherung eines elektrischen Bauelements
EP2008292B1 (en) * 2006-03-28 2013-08-28 Littelfuse Ireland Limited Transient voltage surge suppression
US8525633B2 (en) * 2008-04-21 2013-09-03 Littelfuse, Inc. Fusible substrate
JP5571466B2 (ja) * 2010-06-10 2014-08-13 イビデン株式会社 プリント配線板、電子デバイス、及びプリント配線板の製造方法
JP6508527B2 (ja) * 2015-10-12 2019-05-08 株式会社オートネットワーク技術研究所 端子付き電線
JP6660278B2 (ja) * 2016-10-26 2020-03-11 三菱電機株式会社 樹脂封止型半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985961A (ja) * 1972-12-22 1974-08-17

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE442015A (ja) * 1940-07-03
US2979644A (en) * 1960-05-13 1961-04-11 Chase Shawmut Co Protection for semiconductor power diodes
US3444440A (en) * 1964-11-27 1969-05-13 Motorola Inc Multiple lead semiconductor device with plastic encapsulation supporting such leads and associated elements
US3451609A (en) * 1967-08-24 1969-06-24 Us Air Force Heat shrinkable plastic soldering sleeve
JPS5016503B1 (ja) * 1969-11-06 1975-06-13
DE2214163A1 (de) * 1972-03-23 1973-10-11 Bosch Gmbh Robert Elektrische schaltungsanordnung
US3777297A (en) * 1972-10-27 1973-12-04 Chase Shawmut Co Electric fuse for elevated circuit voltages
US3832606A (en) * 1973-02-15 1974-08-27 Gen Motors Corp Semiconductor diode package with protection fuse
JPS568457B2 (ja) * 1973-05-30 1981-02-24 Matsushita Electric Ind Co Ltd
DE2408540C2 (de) * 1974-02-22 1982-04-08 Robert Bosch Gmbh, 7000 Stuttgart Halbleiterbauelement aus einer Vielzahl mindestens annähernd gleicher Schaltungselemente und Verfahren zum Erkennen und Abtrennen defekter Schaltungselemente

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985961A (ja) * 1972-12-22 1974-08-17

Also Published As

Publication number Publication date
US4169271A (en) 1979-09-25
GB1547129A (en) 1979-06-06
DE2758890B2 (de) 1979-08-30
DE2758890C3 (de) 1983-12-22
DE2758890A1 (de) 1978-08-03

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