JPS5385160A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5385160A
JPS5385160A JP15805576A JP15805576A JPS5385160A JP S5385160 A JPS5385160 A JP S5385160A JP 15805576 A JP15805576 A JP 15805576A JP 15805576 A JP15805576 A JP 15805576A JP S5385160 A JPS5385160 A JP S5385160A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
bonding
semiconductor chip
semiconductor package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15805576A
Other languages
Japanese (ja)
Inventor
Norishige Hisatsugu
Eiji Yamamura
Shigeru Yokogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15805576A priority Critical patent/JPS5385160A/en
Publication of JPS5385160A publication Critical patent/JPS5385160A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To perform bonding of a semiconductor chip at a low temperature and yet within a short time by beforehand preheating a semiconductor package at the time of bonding the semiconductor chip on the stud of the semiconductor package through thermo compression bonding.
COPYRIGHT: (C)1978,JPO&Japio
JP15805576A 1976-12-31 1976-12-31 Production of semiconductor device Pending JPS5385160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15805576A JPS5385160A (en) 1976-12-31 1976-12-31 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15805576A JPS5385160A (en) 1976-12-31 1976-12-31 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5385160A true JPS5385160A (en) 1978-07-27

Family

ID=15663297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15805576A Pending JPS5385160A (en) 1976-12-31 1976-12-31 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5385160A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526651A (en) * 1978-08-14 1980-02-26 Matsushita Electronics Corp Bonding method of semiconductor substrate
WO1980001222A1 (en) * 1978-12-01 1980-06-12 Fujitsu Ltd Method of manufacturing semiconductor laser devices
CN109801851A (en) * 2017-11-17 2019-05-24 丰田自动车株式会社 The manufacturing method of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526651A (en) * 1978-08-14 1980-02-26 Matsushita Electronics Corp Bonding method of semiconductor substrate
WO1980001222A1 (en) * 1978-12-01 1980-06-12 Fujitsu Ltd Method of manufacturing semiconductor laser devices
CN109801851A (en) * 2017-11-17 2019-05-24 丰田自动车株式会社 The manufacturing method of semiconductor device
JP2019091867A (en) * 2017-11-17 2019-06-13 トヨタ自動車株式会社 Semiconductor device manufacturing method

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