JPS534779A - Gas phase growth method of compound semiconductor - Google Patents

Gas phase growth method of compound semiconductor

Info

Publication number
JPS534779A
JPS534779A JP7886576A JP7886576A JPS534779A JP S534779 A JPS534779 A JP S534779A JP 7886576 A JP7886576 A JP 7886576A JP 7886576 A JP7886576 A JP 7886576A JP S534779 A JPS534779 A JP S534779A
Authority
JP
Japan
Prior art keywords
gas phase
compound semiconductor
growth method
phase growth
plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7886576A
Other languages
English (en)
Other versions
JPS544713B2 (ja
Inventor
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7886576A priority Critical patent/JPS534779A/ja
Publication of JPS534779A publication Critical patent/JPS534779A/ja
Publication of JPS544713B2 publication Critical patent/JPS544713B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP7886576A 1976-07-05 1976-07-05 Gas phase growth method of compound semiconductor Granted JPS534779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7886576A JPS534779A (en) 1976-07-05 1976-07-05 Gas phase growth method of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7886576A JPS534779A (en) 1976-07-05 1976-07-05 Gas phase growth method of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS534779A true JPS534779A (en) 1978-01-17
JPS544713B2 JPS544713B2 (ja) 1979-03-09

Family

ID=13673708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7886576A Granted JPS534779A (en) 1976-07-05 1976-07-05 Gas phase growth method of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS534779A (ja)

Also Published As

Publication number Publication date
JPS544713B2 (ja) 1979-03-09

Similar Documents

Publication Publication Date Title
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS534779A (en) Gas phase growth method of compound semiconductor
JPS53108389A (en) Manufacture for semiconductor device
JPS5296865A (en) Crystal grown unit for chemical compound semiconductor
JPS5320763A (en) Crystal growing method and apparatus
JPS5649520A (en) Vapor growth of compound semiconductor
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS53108764A (en) Diffusion jig of semiconductor wafers
JPS51126037A (en) Semiconductor crystal growth method
JPS53133366A (en) Impurity diffusion method
JPS5227378A (en) Wafer test method
JPS5216989A (en) Process of semiconductor thin film
JPS5376396A (en) Base plate securing jig for liquid phase epitaxial growth
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5261958A (en) Method and device for liquid phase crystal crowth
JPS5467765A (en) Production of semiconductor device of gallium arsenide
JPS528769A (en) Semiconductor device
JPS52109866A (en) Liquid epitaxial growing method
JPS5380158A (en) Vapor phase growth for compound semiconductor
JPS5367353A (en) Manufacturing device of semiconductor crystal
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5295164A (en) Dividing and cleansing for semi-conductor pellet
JPS53118368A (en) Semiconductor heat diffusion device