JPS53139466A - Process method for semiconductor substrate - Google Patents

Process method for semiconductor substrate

Info

Publication number
JPS53139466A
JPS53139466A JP5405977A JP5405977A JPS53139466A JP S53139466 A JPS53139466 A JP S53139466A JP 5405977 A JP5405977 A JP 5405977A JP 5405977 A JP5405977 A JP 5405977A JP S53139466 A JPS53139466 A JP S53139466A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
process method
crystal
purposely
fusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5405977A
Other languages
Japanese (ja)
Other versions
JPS5837983B2 (en
Inventor
Seiji Kawato
Takanori Hayafuji
Yuichi Sato
Junzo Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5405977A priority Critical patent/JPS5837983B2/en
Publication of JPS53139466A publication Critical patent/JPS53139466A/en
Publication of JPS5837983B2 publication Critical patent/JPS5837983B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent perfectly the occurrence of the crystal defect on the substrate surface after the heat oxidation, by fusing and dispersing the utmost layer of the rear surface of the semiconductor substrate by the laser beam and causing the crystal strain purposely due to the thermal stress there.
COPYRIGHT: (C)1978,JPO&Japio
JP5405977A 1977-05-11 1977-05-11 Semiconductor substrate processing method Expired JPS5837983B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5405977A JPS5837983B2 (en) 1977-05-11 1977-05-11 Semiconductor substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5405977A JPS5837983B2 (en) 1977-05-11 1977-05-11 Semiconductor substrate processing method

Publications (2)

Publication Number Publication Date
JPS53139466A true JPS53139466A (en) 1978-12-05
JPS5837983B2 JPS5837983B2 (en) 1983-08-19

Family

ID=12960033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5405977A Expired JPS5837983B2 (en) 1977-05-11 1977-05-11 Semiconductor substrate processing method

Country Status (1)

Country Link
JP (1) JPS5837983B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793532A (en) * 1980-12-03 1982-06-10 Toshiba Corp Treating method for semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793532A (en) * 1980-12-03 1982-06-10 Toshiba Corp Treating method for semiconductor wafer

Also Published As

Publication number Publication date
JPS5837983B2 (en) 1983-08-19

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