JPS5421266A - Forming method of semiconductor oxide film - Google Patents
Forming method of semiconductor oxide filmInfo
- Publication number
- JPS5421266A JPS5421266A JP8680877A JP8680877A JPS5421266A JP S5421266 A JPS5421266 A JP S5421266A JP 8680877 A JP8680877 A JP 8680877A JP 8680877 A JP8680877 A JP 8680877A JP S5421266 A JPS5421266 A JP S5421266A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- forming method
- semiconductor oxide
- thermal oxidation
- oxidation under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To establish an oxide film less in layer defection in comparison with thermal oxidation under normal pressure, by performing thermal oxidation under high pressure oxidized atomosphere.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8680877A JPS5421266A (en) | 1977-07-19 | 1977-07-19 | Forming method of semiconductor oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8680877A JPS5421266A (en) | 1977-07-19 | 1977-07-19 | Forming method of semiconductor oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5421266A true JPS5421266A (en) | 1979-02-17 |
Family
ID=13897100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8680877A Pending JPS5421266A (en) | 1977-07-19 | 1977-07-19 | Forming method of semiconductor oxide film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5421266A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130168A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Method of forming mos oxide film |
JPS63217623A (en) * | 1987-03-05 | 1988-09-09 | M Setetsuku Kk | High pressure, low temperature heat treatment of semiconductor wafer |
JPH01280320A (en) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | Semiconductor pressure oxidation |
US5123994A (en) * | 1989-05-30 | 1992-06-23 | Motorola, Inc. | Ramped oxide formation method |
WO1994011901A1 (en) * | 1992-11-17 | 1994-05-26 | Tadahiro Ohmi | Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films |
-
1977
- 1977-07-19 JP JP8680877A patent/JPS5421266A/en active Pending
Non-Patent Citations (1)
Title |
---|
JAPAN JOURNAL APPLIED PHYSICS=1977 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130168A (en) * | 1979-03-29 | 1980-10-08 | Fujitsu Ltd | Method of forming mos oxide film |
JPS6131613B2 (en) * | 1979-03-29 | 1986-07-21 | Fujitsu Ltd | |
JPS63217623A (en) * | 1987-03-05 | 1988-09-09 | M Setetsuku Kk | High pressure, low temperature heat treatment of semiconductor wafer |
JPH01280320A (en) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | Semiconductor pressure oxidation |
US5123994A (en) * | 1989-05-30 | 1992-06-23 | Motorola, Inc. | Ramped oxide formation method |
WO1994011901A1 (en) * | 1992-11-17 | 1994-05-26 | Tadahiro Ohmi | Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films |
US5840368A (en) * | 1992-11-17 | 1998-11-24 | Ohmi; Tadahiro | Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films |
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