JPS5421266A - Forming method of semiconductor oxide film - Google Patents

Forming method of semiconductor oxide film

Info

Publication number
JPS5421266A
JPS5421266A JP8680877A JP8680877A JPS5421266A JP S5421266 A JPS5421266 A JP S5421266A JP 8680877 A JP8680877 A JP 8680877A JP 8680877 A JP8680877 A JP 8680877A JP S5421266 A JPS5421266 A JP S5421266A
Authority
JP
Japan
Prior art keywords
oxide film
forming method
semiconductor oxide
thermal oxidation
oxidation under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8680877A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Kuniaki Miyake
Hirokazu Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8680877A priority Critical patent/JPS5421266A/en
Publication of JPS5421266A publication Critical patent/JPS5421266A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To establish an oxide film less in layer defection in comparison with thermal oxidation under normal pressure, by performing thermal oxidation under high pressure oxidized atomosphere.
COPYRIGHT: (C)1979,JPO&Japio
JP8680877A 1977-07-19 1977-07-19 Forming method of semiconductor oxide film Pending JPS5421266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8680877A JPS5421266A (en) 1977-07-19 1977-07-19 Forming method of semiconductor oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8680877A JPS5421266A (en) 1977-07-19 1977-07-19 Forming method of semiconductor oxide film

Publications (1)

Publication Number Publication Date
JPS5421266A true JPS5421266A (en) 1979-02-17

Family

ID=13897100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8680877A Pending JPS5421266A (en) 1977-07-19 1977-07-19 Forming method of semiconductor oxide film

Country Status (1)

Country Link
JP (1) JPS5421266A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130168A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Method of forming mos oxide film
JPS63217623A (en) * 1987-03-05 1988-09-09 M Setetsuku Kk High pressure, low temperature heat treatment of semiconductor wafer
JPH01280320A (en) * 1988-05-06 1989-11-10 Tel Sagami Ltd Semiconductor pressure oxidation
US5123994A (en) * 1989-05-30 1992-06-23 Motorola, Inc. Ramped oxide formation method
WO1994011901A1 (en) * 1992-11-17 1994-05-26 Tadahiro Ohmi Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPAN JOURNAL APPLIED PHYSICS=1977 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130168A (en) * 1979-03-29 1980-10-08 Fujitsu Ltd Method of forming mos oxide film
JPS6131613B2 (en) * 1979-03-29 1986-07-21 Fujitsu Ltd
JPS63217623A (en) * 1987-03-05 1988-09-09 M Setetsuku Kk High pressure, low temperature heat treatment of semiconductor wafer
JPH01280320A (en) * 1988-05-06 1989-11-10 Tel Sagami Ltd Semiconductor pressure oxidation
US5123994A (en) * 1989-05-30 1992-06-23 Motorola, Inc. Ramped oxide formation method
WO1994011901A1 (en) * 1992-11-17 1994-05-26 Tadahiro Ohmi Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films
US5840368A (en) * 1992-11-17 1998-11-24 Ohmi; Tadahiro Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films

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