JPS5310966A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS5310966A
JPS5310966A JP8509776A JP8509776A JPS5310966A JP S5310966 A JPS5310966 A JP S5310966A JP 8509776 A JP8509776 A JP 8509776A JP 8509776 A JP8509776 A JP 8509776A JP S5310966 A JPS5310966 A JP S5310966A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
wafers
beveling
chipping
slicing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8509776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5338594B2 (OSRAM
Inventor
Toshihiko Takayanagi
Katsunori Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8509776A priority Critical patent/JPS5310966A/ja
Publication of JPS5310966A publication Critical patent/JPS5310966A/ja
Publication of JPS5338594B2 publication Critical patent/JPS5338594B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP8509776A 1976-07-19 1976-07-19 Semiconductor wafer Granted JPS5310966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8509776A JPS5310966A (en) 1976-07-19 1976-07-19 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8509776A JPS5310966A (en) 1976-07-19 1976-07-19 Semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS5310966A true JPS5310966A (en) 1978-01-31
JPS5338594B2 JPS5338594B2 (OSRAM) 1978-10-16

Family

ID=13849093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8509776A Granted JPS5310966A (en) 1976-07-19 1976-07-19 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5310966A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113332A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Manufacture of wafer
JPS55165638A (en) * 1979-06-13 1980-12-24 Nec Kyushu Ltd Semiconductor wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958749A (OSRAM) * 1972-10-04 1974-06-07
JPS5029279A (OSRAM) * 1973-07-20 1975-03-25
JPS5127772A (en) * 1974-09-02 1976-03-08 Nippon Electric Co Handotaisochi no seizohoho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958749A (OSRAM) * 1972-10-04 1974-06-07
JPS5029279A (OSRAM) * 1973-07-20 1975-03-25
JPS5127772A (en) * 1974-09-02 1976-03-08 Nippon Electric Co Handotaisochi no seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113332A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Manufacture of wafer
JPS55165638A (en) * 1979-06-13 1980-12-24 Nec Kyushu Ltd Semiconductor wafer

Also Published As

Publication number Publication date
JPS5338594B2 (OSRAM) 1978-10-16

Similar Documents

Publication Publication Date Title
JPS5238890A (en) Semiconductor device
DE2965006D1 (en) Method for the selective detection of defects, caused by polishing, on the surface of silicon wafers
JPS5310966A (en) Semiconductor wafer
JPS53124087A (en) Manufacture of semiconductor device
JPS5441665A (en) Manufacture for semiconductor device
JPS5335372A (en) Beveling method of wafers
JPS5329086A (en) Production of semiconductor device
JPS52127179A (en) Manufacturing method of semiconductor device
JPS51140469A (en) Wafer cracking process
JPS5434769A (en) Photoetching method for silicon semiconductor wafer
JPS5249781A (en) Process for production of semiconductor device
JPS5230171A (en) Method for fabrication of semiconductor device
JPS526080A (en) Production method of semiconductor wafer
JPS5246777A (en) Semiconductor device
JPS5314551A (en) Working method of wafers
JPS51140638A (en) Positioning method
JPS51115777A (en) Manufacturing method of a semiconductor apparatus
JPS5386569A (en) Semiconductor pellet forming method
JPS5361267A (en) Production of semiconductor device
JPS53140698A (en) Method and device for wafer lapping
JPS5260566A (en) Production of semiconductor device
JPS52179A (en) Method of fabricating semiconductor
JPS53135568A (en) Manufacture for semiconductor device
JPS5211761A (en) Method of cutting semiconductor wafers
JPS5215275A (en) Method of manufacturing semiconductor device

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Effective date: 20060418

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060515

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 4

Free format text: PAYMENT UNTIL: 20100602

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100602

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110602

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120602

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 6

Free format text: PAYMENT UNTIL: 20120602

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130602

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250