JPS5240978A - Process for production of semiconductor device - Google Patents

Process for production of semiconductor device

Info

Publication number
JPS5240978A
JPS5240978A JP11596475A JP11596475A JPS5240978A JP S5240978 A JPS5240978 A JP S5240978A JP 11596475 A JP11596475 A JP 11596475A JP 11596475 A JP11596475 A JP 11596475A JP S5240978 A JPS5240978 A JP S5240978A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
film
tapers
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11596475A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5540180B2 (enrdf_load_stackoverflow
Inventor
Kenji Sugishima
Satoshi Suda
Shuji Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11596475A priority Critical patent/JPS5240978A/ja
Publication of JPS5240978A publication Critical patent/JPS5240978A/ja
Publication of JPS5540180B2 publication Critical patent/JPS5540180B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP11596475A 1975-09-27 1975-09-27 Process for production of semiconductor device Granted JPS5240978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11596475A JPS5240978A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11596475A JPS5240978A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5240978A true JPS5240978A (en) 1977-03-30
JPS5540180B2 JPS5540180B2 (enrdf_load_stackoverflow) 1980-10-16

Family

ID=14675486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11596475A Granted JPS5240978A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5240978A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150231A (en) * 1979-05-14 1980-11-22 Hitachi Ltd Opening method of insulating film
JPS5612770A (en) * 1979-07-11 1981-02-07 Hitachi Ltd Semiconductor device and its manufacturing device
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5735317A (en) * 1980-08-13 1982-02-25 Nec Kyushu Ltd Semiconductor device
JPS57170535A (en) * 1981-04-15 1982-10-20 Toshiba Corp Etching method for thin silicon film
JPS57190332A (en) * 1981-05-19 1982-11-22 Seiko Epson Corp Manufacture of semiconductor device
JPS57198646A (en) * 1981-06-01 1982-12-06 Seiko Epson Corp Manufacture of semiconductor device
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58127328A (ja) * 1982-01-26 1983-07-29 Seiko Epson Corp 半導体基板の絶縁保護膜の蝕刻方法
JPS5913334A (ja) * 1982-07-01 1984-01-24 コミツサレ・ア・レナジイ・アトミツク 集積回路の酸化膜生成方法
JPS59189626A (ja) * 1983-04-13 1984-10-27 Matsushita Electronics Corp 半導体装置の製造方法
JPS60160126A (ja) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp 半導体装置の製造方法
JPS60247926A (ja) * 1984-04-23 1985-12-07 ゼネラル・エレクトリツク・カンパニイ テ−パドライエツチング法
JPS6297332A (ja) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Mosトランジスタの製造方法
JPS63100780A (ja) * 1986-10-17 1988-05-02 Fuji Electric Co Ltd 圧力センサの製造方法
JPS63205916A (ja) * 1987-02-23 1988-08-25 Nippon Denso Co Ltd エツチング方法
JPS63237527A (ja) * 1987-03-26 1988-10-04 Hoya Corp レジスト剥離方法
US5354716A (en) * 1990-05-02 1994-10-11 Nec Electronics, Inc. Method for forming a DRAM memory cell with tapered capacitor electrodes

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150231A (en) * 1979-05-14 1980-11-22 Hitachi Ltd Opening method of insulating film
JPS5612770A (en) * 1979-07-11 1981-02-07 Hitachi Ltd Semiconductor device and its manufacturing device
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5735317A (en) * 1980-08-13 1982-02-25 Nec Kyushu Ltd Semiconductor device
JPS57170535A (en) * 1981-04-15 1982-10-20 Toshiba Corp Etching method for thin silicon film
JPS57190332A (en) * 1981-05-19 1982-11-22 Seiko Epson Corp Manufacture of semiconductor device
JPS57198646A (en) * 1981-06-01 1982-12-06 Seiko Epson Corp Manufacture of semiconductor device
JPS57199223A (en) * 1981-06-01 1982-12-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58127328A (ja) * 1982-01-26 1983-07-29 Seiko Epson Corp 半導体基板の絶縁保護膜の蝕刻方法
JPS5913334A (ja) * 1982-07-01 1984-01-24 コミツサレ・ア・レナジイ・アトミツク 集積回路の酸化膜生成方法
JPS59189626A (ja) * 1983-04-13 1984-10-27 Matsushita Electronics Corp 半導体装置の製造方法
JPS60160126A (ja) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp 半導体装置の製造方法
JPS60247926A (ja) * 1984-04-23 1985-12-07 ゼネラル・エレクトリツク・カンパニイ テ−パドライエツチング法
JPS63100780A (ja) * 1986-10-17 1988-05-02 Fuji Electric Co Ltd 圧力センサの製造方法
JPS6297332A (ja) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Mosトランジスタの製造方法
JPS63205916A (ja) * 1987-02-23 1988-08-25 Nippon Denso Co Ltd エツチング方法
JPS63237527A (ja) * 1987-03-26 1988-10-04 Hoya Corp レジスト剥離方法
US5354716A (en) * 1990-05-02 1994-10-11 Nec Electronics, Inc. Method for forming a DRAM memory cell with tapered capacitor electrodes

Also Published As

Publication number Publication date
JPS5540180B2 (enrdf_load_stackoverflow) 1980-10-16

Similar Documents

Publication Publication Date Title
JPS5240978A (en) Process for production of semiconductor device
JPS5351970A (en) Manufacture for semiconductor substrate
JPS523390A (en) Manufacturing method of semiconductor device
JPS5233490A (en) Manufacturing process of semiconductor device
JPS5248468A (en) Process for production of semiconductor device
JPS542070A (en) Manufacture for semiconductor element
JPS5240061A (en) Semiconductor device and process for production of same
JPS5384684A (en) Plasma etching device
JPS5274281A (en) Production of semiconductor device
JPS543473A (en) Manufacture of semiconductor device
JPS51123086A (en) Semicanductor device and its production process
JPS52112281A (en) Manufacture of semiconductor
JPS5254378A (en) Production of semiconductor device
JPS5396673A (en) Gas plasma etching method for sio2 film
JPS5421173A (en) Manufacture for semiconductor having oxide film
JPS5598828A (en) Removing method of thin organic film
JPS5248469A (en) Process for production of semiconductor device
JPS5248976A (en) Process for production of semiconductor device
JPS5435683A (en) Manufacture of semiconductor device
JPS5243372A (en) Process for production of semiconductor
JPS51124379A (en) Plasma etching method
JPS5386577A (en) Production of semiconductor device
JPS5374389A (en) Manufacture of semiconductor device
JPS5324291A (en) Production of semiconductor devi ce
JPS53148279A (en) Production of semiconductor device