JPS5240978A - Process for production of semiconductor device - Google Patents
Process for production of semiconductor deviceInfo
- Publication number
- JPS5240978A JPS5240978A JP11596475A JP11596475A JPS5240978A JP S5240978 A JPS5240978 A JP S5240978A JP 11596475 A JP11596475 A JP 11596475A JP 11596475 A JP11596475 A JP 11596475A JP S5240978 A JPS5240978 A JP S5240978A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- film
- tapers
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11596475A JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11596475A JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5240978A true JPS5240978A (en) | 1977-03-30 |
| JPS5540180B2 JPS5540180B2 (enrdf_load_stackoverflow) | 1980-10-16 |
Family
ID=14675486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11596475A Granted JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5240978A (enrdf_load_stackoverflow) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150231A (en) * | 1979-05-14 | 1980-11-22 | Hitachi Ltd | Opening method of insulating film |
| JPS5612770A (en) * | 1979-07-11 | 1981-02-07 | Hitachi Ltd | Semiconductor device and its manufacturing device |
| JPS5690525A (en) * | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5735317A (en) * | 1980-08-13 | 1982-02-25 | Nec Kyushu Ltd | Semiconductor device |
| JPS57170535A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Etching method for thin silicon film |
| JPS57190332A (en) * | 1981-05-19 | 1982-11-22 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS57198646A (en) * | 1981-06-01 | 1982-12-06 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS58127328A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体基板の絶縁保護膜の蝕刻方法 |
| JPS5913334A (ja) * | 1982-07-01 | 1984-01-24 | コミツサレ・ア・レナジイ・アトミツク | 集積回路の酸化膜生成方法 |
| JPS59189626A (ja) * | 1983-04-13 | 1984-10-27 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS60160126A (ja) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS60247926A (ja) * | 1984-04-23 | 1985-12-07 | ゼネラル・エレクトリツク・カンパニイ | テ−パドライエツチング法 |
| JPS6297332A (ja) * | 1986-10-24 | 1987-05-06 | Matsushita Electric Ind Co Ltd | Mosトランジスタの製造方法 |
| JPS63100780A (ja) * | 1986-10-17 | 1988-05-02 | Fuji Electric Co Ltd | 圧力センサの製造方法 |
| JPS63205916A (ja) * | 1987-02-23 | 1988-08-25 | Nippon Denso Co Ltd | エツチング方法 |
| JPS63237527A (ja) * | 1987-03-26 | 1988-10-04 | Hoya Corp | レジスト剥離方法 |
| US5354716A (en) * | 1990-05-02 | 1994-10-11 | Nec Electronics, Inc. | Method for forming a DRAM memory cell with tapered capacitor electrodes |
-
1975
- 1975-09-27 JP JP11596475A patent/JPS5240978A/ja active Granted
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150231A (en) * | 1979-05-14 | 1980-11-22 | Hitachi Ltd | Opening method of insulating film |
| JPS5612770A (en) * | 1979-07-11 | 1981-02-07 | Hitachi Ltd | Semiconductor device and its manufacturing device |
| JPS5690525A (en) * | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5735317A (en) * | 1980-08-13 | 1982-02-25 | Nec Kyushu Ltd | Semiconductor device |
| JPS57170535A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Etching method for thin silicon film |
| JPS57190332A (en) * | 1981-05-19 | 1982-11-22 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS57198646A (en) * | 1981-06-01 | 1982-12-06 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS58127328A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体基板の絶縁保護膜の蝕刻方法 |
| JPS5913334A (ja) * | 1982-07-01 | 1984-01-24 | コミツサレ・ア・レナジイ・アトミツク | 集積回路の酸化膜生成方法 |
| JPS59189626A (ja) * | 1983-04-13 | 1984-10-27 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS60160126A (ja) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS60247926A (ja) * | 1984-04-23 | 1985-12-07 | ゼネラル・エレクトリツク・カンパニイ | テ−パドライエツチング法 |
| JPS63100780A (ja) * | 1986-10-17 | 1988-05-02 | Fuji Electric Co Ltd | 圧力センサの製造方法 |
| JPS6297332A (ja) * | 1986-10-24 | 1987-05-06 | Matsushita Electric Ind Co Ltd | Mosトランジスタの製造方法 |
| JPS63205916A (ja) * | 1987-02-23 | 1988-08-25 | Nippon Denso Co Ltd | エツチング方法 |
| JPS63237527A (ja) * | 1987-03-26 | 1988-10-04 | Hoya Corp | レジスト剥離方法 |
| US5354716A (en) * | 1990-05-02 | 1994-10-11 | Nec Electronics, Inc. | Method for forming a DRAM memory cell with tapered capacitor electrodes |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5540180B2 (enrdf_load_stackoverflow) | 1980-10-16 |
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