JPS52112273A - Scribing method of semiconductor wafer - Google Patents
Scribing method of semiconductor waferInfo
- Publication number
- JPS52112273A JPS52112273A JP2861876A JP2861876A JPS52112273A JP S52112273 A JPS52112273 A JP S52112273A JP 2861876 A JP2861876 A JP 2861876A JP 2861876 A JP2861876 A JP 2861876A JP S52112273 A JPS52112273 A JP S52112273A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- scribing method
- scribing
- semiconductor
- prescribed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dicing (AREA)
Abstract
PURPOSE: To prevent cracks at cross point of braking groove by determining both scribing direction and order in accordance with the crystal surface of semiconductor and then by performing scribing through change of cutter load as prescribed.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2861876A JPS52112273A (en) | 1976-03-18 | 1976-03-18 | Scribing method of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2861876A JPS52112273A (en) | 1976-03-18 | 1976-03-18 | Scribing method of semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52112273A true JPS52112273A (en) | 1977-09-20 |
Family
ID=12253529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2861876A Pending JPS52112273A (en) | 1976-03-18 | 1976-03-18 | Scribing method of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52112273A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987002023A1 (en) * | 1985-10-04 | 1987-04-09 | Fuel Tech, Inc. | Reduction of nitrogen- and carbon-based pollutants |
-
1976
- 1976-03-18 JP JP2861876A patent/JPS52112273A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987002023A1 (en) * | 1985-10-04 | 1987-04-09 | Fuel Tech, Inc. | Reduction of nitrogen- and carbon-based pollutants |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5356972A (en) | Mesa type semiconductor device | |
JPS51134071A (en) | Method to eliminate crystal defects of silicon | |
JPS5333050A (en) | Production of semiconductor element | |
JPS52112273A (en) | Scribing method of semiconductor wafer | |
JPS5421265A (en) | Forming method of semiconductor oxide film | |
JPS5253673A (en) | Device and production for semiconductor | |
JPS5249991A (en) | Sputtering method | |
JPS5228879A (en) | Semiconductor device and method for its production | |
JPS5436182A (en) | Manufacture for semiconductor device | |
JPS5378165A (en) | Cutting method for semiconductor substrate | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS544064A (en) | Manufacture for semiconductor device | |
JPS52140275A (en) | Processing method for semiconductor wafer | |
JPS534476A (en) | Mask alignment method to semiconductor substrate | |
JPS5211761A (en) | Method of cutting semiconductor wafers | |
JPS5353143A (en) | Method of plant construction | |
JPS52122475A (en) | Production of semiconductor device | |
JPS5317064A (en) | Impurity diffusion method | |
JPS5424575A (en) | Handling method of wafer | |
JPS5230171A (en) | Method for fabrication of semiconductor device | |
JPS52144972A (en) | Formation method of photo resist film | |
JPS52127083A (en) | Semiconductor strain element | |
JPS51140198A (en) | Crystal working process | |
JPS52127063A (en) | Production of semiconductor ic device | |
JPS5270772A (en) | Semiconductor rectifier |