JPH11509048A - 抵抗素子が設けられている半導体デバイス - Google Patents
抵抗素子が設けられている半導体デバイスInfo
- Publication number
- JPH11509048A JPH11509048A JP9538691A JP53869197A JPH11509048A JP H11509048 A JPH11509048 A JP H11509048A JP 9538691 A JP9538691 A JP 9538691A JP 53869197 A JP53869197 A JP 53869197A JP H11509048 A JPH11509048 A JP H11509048A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- region
- semiconductor device
- surface area
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000005641 tunneling Effects 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.表面と隣接し、電圧を印加するための2個の接続部を有する抵抗素子が形成 されている表面領域を有する半導体本体を具える半導体デバイスにおいて、前記 抵抗素子が相互に対向する向きに直列に接続した2個のダイオードを具え、これ らの両方のダイオードが、前記表面領域に形成され高濃度の不純物が添加された 第2導電型の表面区域とこの表面区域に形成され高濃度の不純物が添加された第 1導電型の表面区域との間にpn接合を有し、前記表面区域が少なくとも動作中 に互い接続されると共に電気的にフローティングにされ、前記pn接合が、V= 0V付近の電圧範囲で少なくともほぼバンド−バンドトンネリングにより電流が 流れるような不純物の濃度勾配を有することを特徴とする半導体デバイス。 2.前記各ダイオードの第2導電型の表面区域の不純物濃度を、前記pn接合と 隣接する側において少なくとも約1019原子/cm3としたことを特徴とする請 求項1に記載の半導体デバイス。 3.前記第1導電型の2個の区域が少なくともほぼ同一の表面積を有することを 特徴とする請求項1又は2に記載の半導体デバイス。 4.前記ダイオードの第2導電型の表面区域が、これらダイオードのための第2 導電型の共通の表面区域を構成する連続する区域を形成することを特徴とする請 求項1から3までのいずれか1項に記載の半導体デバイス。 5.前記第2導電型の表面区域が互いにある距離を以て位置すると共にMOSト ランジスタのソース領域及びドレイン領域を構成し、このMOSトランジスタが 、前記第2導電型の表面区域間に位置するチャネル領域と、このチャネル領域の 上側に位置し電気的に絶縁性の層によりチャネル領域から絶縁されたゲート電極 とを有することを特徴とする請求項1から3までのいずれか1項に記載の半導体 デバイス。 6.前記抵抗体がCMOS集積回路の一部を構成することを特徴とする請求項5 に記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96201172 | 1996-04-29 | ||
EP96201172.2 | 1996-04-29 | ||
PCT/IB1997/000364 WO1997041602A2 (en) | 1996-04-29 | 1997-04-08 | Semiconductor device provided with a resistance element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11509048A true JPH11509048A (ja) | 1999-08-03 |
JP4145353B2 JP4145353B2 (ja) | 2008-09-03 |
Family
ID=8223938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53869197A Expired - Lifetime JP4145353B2 (ja) | 1996-04-29 | 1997-04-08 | 抵抗素子が設けられている半導体デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US5760450A (ja) |
EP (1) | EP0835526A2 (ja) |
JP (1) | JP4145353B2 (ja) |
KR (1) | KR100459954B1 (ja) |
TW (1) | TW335557B (ja) |
WO (1) | WO1997041602A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6262442B1 (en) * | 1999-04-30 | 2001-07-17 | Dmitri G. Kravtchenko | Zener diode and RC network combination semiconductor device for use in integrated circuits |
US6489660B1 (en) * | 2001-05-22 | 2002-12-03 | General Semiconductor, Inc. | Low-voltage punch-through bi-directional transient-voltage suppression devices |
KR20030048999A (ko) * | 2001-12-13 | 2003-06-25 | 삼성전자주식회사 | 반도체 소자의 저항 및 그 형성 방법 |
DE10217610B4 (de) * | 2002-04-19 | 2005-11-03 | Infineon Technologies Ag | Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren |
US7582537B2 (en) | 2004-12-15 | 2009-09-01 | Lg Electronics Inc. | Zener diode and methods for fabricating and packaging same |
FR2884050B1 (fr) * | 2005-04-01 | 2007-07-20 | St Microelectronics Sa | Circuit integre comprenant un substrat et une resistance |
US8445917B2 (en) | 2009-03-20 | 2013-05-21 | Cree, Inc. | Bidirectional silicon carbide transient voltage suppression devices |
EP2421281A3 (en) * | 2010-08-17 | 2012-04-04 | Nxp B.V. | Circuit and method for monitoring a capacitive signal source |
JP6642507B2 (ja) * | 2016-10-18 | 2020-02-05 | 株式会社デンソー | 半導体装置およびその製造方法 |
CN109863581B (zh) * | 2016-10-18 | 2022-04-26 | 株式会社电装 | 半导体装置及其制造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3341750A (en) * | 1965-03-31 | 1967-09-12 | Texas Instruments Inc | Low voltage semi-conductor reference diode |
US3882529A (en) * | 1967-10-06 | 1975-05-06 | Texas Instruments Inc | Punch-through semiconductor diodes |
US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
US5196233A (en) * | 1989-01-18 | 1993-03-23 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor circuits |
US5273924A (en) * | 1991-08-30 | 1993-12-28 | Micron Technology, Inc. | Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region |
US5293058A (en) * | 1992-11-12 | 1994-03-08 | The Trustees Of Columbia University | Linear voltage-controlled resistance element |
KR100463367B1 (ko) * | 1995-10-20 | 2005-05-16 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 반도체장치 |
-
1997
- 1997-03-14 TW TW086103201A patent/TW335557B/zh not_active IP Right Cessation
- 1997-03-31 US US08/828,238 patent/US5760450A/en not_active Expired - Lifetime
- 1997-04-08 KR KR1019970709866A patent/KR100459954B1/ko not_active IP Right Cessation
- 1997-04-08 JP JP53869197A patent/JP4145353B2/ja not_active Expired - Lifetime
- 1997-04-08 EP EP97908462A patent/EP0835526A2/en not_active Withdrawn
- 1997-04-08 WO PCT/IB1997/000364 patent/WO1997041602A2/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100459954B1 (ko) | 2005-04-14 |
KR20000064235A (ko) | 2000-11-06 |
WO1997041602A2 (en) | 1997-11-06 |
TW335557B (en) | 1998-07-01 |
US5760450A (en) | 1998-06-02 |
EP0835526A2 (en) | 1998-04-15 |
WO1997041602A3 (en) | 1997-12-24 |
JP4145353B2 (ja) | 2008-09-03 |
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