TW335557B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TW335557B TW335557B TW086103201A TW86103201A TW335557B TW 335557 B TW335557 B TW 335557B TW 086103201 A TW086103201 A TW 086103201A TW 86103201 A TW86103201 A TW 86103201A TW 335557 B TW335557 B TW 335557B
- Authority
- TW
- Taiwan
- Prior art keywords
- surface region
- semiconductor device
- resistor element
- conductor form
- band
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96201172 | 1996-04-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW335557B true TW335557B (en) | 1998-07-01 |
Family
ID=8223938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086103201A TW335557B (en) | 1996-04-29 | 1997-03-14 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5760450A (zh) |
| EP (1) | EP0835526A2 (zh) |
| JP (1) | JP4145353B2 (zh) |
| KR (1) | KR100459954B1 (zh) |
| TW (1) | TW335557B (zh) |
| WO (1) | WO1997041602A2 (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262442B1 (en) * | 1999-04-30 | 2001-07-17 | Dmitri G. Kravtchenko | Zener diode and RC network combination semiconductor device for use in integrated circuits |
| US6489660B1 (en) | 2001-05-22 | 2002-12-03 | General Semiconductor, Inc. | Low-voltage punch-through bi-directional transient-voltage suppression devices |
| KR20030048999A (ko) * | 2001-12-13 | 2003-06-25 | 삼성전자주식회사 | 반도체 소자의 저항 및 그 형성 방법 |
| DE10217610B4 (de) * | 2002-04-19 | 2005-11-03 | Infineon Technologies Ag | Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren |
| US7582537B2 (en) | 2004-12-15 | 2009-09-01 | Lg Electronics Inc. | Zener diode and methods for fabricating and packaging same |
| FR2884050B1 (fr) * | 2005-04-01 | 2007-07-20 | St Microelectronics Sa | Circuit integre comprenant un substrat et une resistance |
| US8445917B2 (en) * | 2009-03-20 | 2013-05-21 | Cree, Inc. | Bidirectional silicon carbide transient voltage suppression devices |
| EP2421281A3 (en) * | 2010-08-17 | 2012-04-04 | Nxp B.V. | Circuit and method for monitoring a capacitive signal source |
| JP6642507B2 (ja) * | 2016-10-18 | 2020-02-05 | 株式会社デンソー | 半導体装置およびその製造方法 |
| CN109863581B (zh) * | 2016-10-18 | 2022-04-26 | 株式会社电装 | 半导体装置及其制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3341750A (en) * | 1965-03-31 | 1967-09-12 | Texas Instruments Inc | Low voltage semi-conductor reference diode |
| US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
| US3882529A (en) * | 1967-10-06 | 1975-05-06 | Texas Instruments Inc | Punch-through semiconductor diodes |
| US5196233A (en) * | 1989-01-18 | 1993-03-23 | Sgs-Thomson Microelectronics, Inc. | Method for fabricating semiconductor circuits |
| US5273924A (en) * | 1991-08-30 | 1993-12-28 | Micron Technology, Inc. | Method for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another region |
| US5293058A (en) * | 1992-11-12 | 1994-03-08 | The Trustees Of Columbia University | Linear voltage-controlled resistance element |
| JPH10512103A (ja) * | 1995-10-20 | 1998-11-17 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体抵抗装置 |
-
1997
- 1997-03-14 TW TW086103201A patent/TW335557B/zh not_active IP Right Cessation
- 1997-03-31 US US08/828,238 patent/US5760450A/en not_active Expired - Lifetime
- 1997-04-08 WO PCT/IB1997/000364 patent/WO1997041602A2/en active IP Right Grant
- 1997-04-08 EP EP97908462A patent/EP0835526A2/en not_active Withdrawn
- 1997-04-08 KR KR1019970709866A patent/KR100459954B1/ko not_active IP Right Cessation
- 1997-04-08 JP JP53869197A patent/JP4145353B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5760450A (en) | 1998-06-02 |
| KR20000064235A (ko) | 2000-11-06 |
| WO1997041602A2 (en) | 1997-11-06 |
| EP0835526A2 (en) | 1998-04-15 |
| WO1997041602A3 (en) | 1997-12-24 |
| JP4145353B2 (ja) | 2008-09-03 |
| KR100459954B1 (ko) | 2005-04-14 |
| JPH11509048A (ja) | 1999-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |