JPH1140824A - 赤外線輻射検出器、特に赤外線検出ボロメータ、の製造法 - Google Patents

赤外線輻射検出器、特に赤外線検出ボロメータ、の製造法

Info

Publication number
JPH1140824A
JPH1140824A JP10122633A JP12263398A JPH1140824A JP H1140824 A JPH1140824 A JP H1140824A JP 10122633 A JP10122633 A JP 10122633A JP 12263398 A JP12263398 A JP 12263398A JP H1140824 A JPH1140824 A JP H1140824A
Authority
JP
Japan
Prior art keywords
layer
bolometer
infrared
substrate
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10122633A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1140824A5 (enExample
Inventor
Paolo Fiorini
パオロ・フィオリニ
Sherif Sedky
シェリフ・セドキー
Matty Caymax
マティ・カイマックス
Christiaan Baert
クリスティアーン・ベールト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of JPH1140824A publication Critical patent/JPH1140824A/ja
Publication of JPH1140824A5 publication Critical patent/JPH1140824A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/017—Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
JP10122633A 1997-03-28 1998-03-27 赤外線輻射検出器、特に赤外線検出ボロメータ、の製造法 Pending JPH1140824A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BE97870044-1 1997-03-28
EP97870044A EP0867701A1 (en) 1997-03-28 1997-03-28 Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007029141A Division JP2007165927A (ja) 1997-03-28 2007-02-08 基板上に積層する多結晶シリコンゲルマニウム層中の内部応力を制御する方法

Publications (2)

Publication Number Publication Date
JPH1140824A true JPH1140824A (ja) 1999-02-12
JPH1140824A5 JPH1140824A5 (enExample) 2006-11-02

Family

ID=8230989

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10122633A Pending JPH1140824A (ja) 1997-03-28 1998-03-27 赤外線輻射検出器、特に赤外線検出ボロメータ、の製造法
JP2007029141A Pending JP2007165927A (ja) 1997-03-28 2007-02-08 基板上に積層する多結晶シリコンゲルマニウム層中の内部応力を制御する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007029141A Pending JP2007165927A (ja) 1997-03-28 2007-02-08 基板上に積層する多結晶シリコンゲルマニウム層中の内部応力を制御する方法

Country Status (4)

Country Link
US (5) US6194722B1 (enExample)
EP (3) EP0867701A1 (enExample)
JP (2) JPH1140824A (enExample)
DE (1) DE69811968T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165927A (ja) * 1997-03-28 2007-06-28 Interuniv Micro Electronica Centrum Vzw 基板上に積層する多結晶シリコンゲルマニウム層中の内部応力を制御する方法
WO2022138377A1 (ja) * 2020-12-25 2022-06-30 国立大学法人横浜国立大学 赤外線吸収体および赤外線吸収体を備えるガスセンサ

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US7320896B2 (en) 2008-01-22
DE69811968D1 (de) 2003-04-17
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EP0867701A1 (en) 1998-09-30
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US6274462B1 (en) 2001-08-14
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US6194722B1 (en) 2001-02-27
US20060289764A1 (en) 2006-12-28
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EP0867702A3 (en) 1998-10-21
US6884636B2 (en) 2005-04-26

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