FR2765245B1 - Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectronique - Google Patents
Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectroniqueInfo
- Publication number
- FR2765245B1 FR2765245B1 FR9707939A FR9707939A FR2765245B1 FR 2765245 B1 FR2765245 B1 FR 2765245B1 FR 9707939 A FR9707939 A FR 9707939A FR 9707939 A FR9707939 A FR 9707939A FR 2765245 B1 FR2765245 B1 FR 2765245B1
- Authority
- FR
- France
- Prior art keywords
- microelectronics
- obtaining
- substrate
- application
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004377 microelectronic Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9707939A FR2765245B1 (fr) | 1997-06-25 | 1997-06-25 | Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectronique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9707939A FR2765245B1 (fr) | 1997-06-25 | 1997-06-25 | Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectronique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2765245A1 FR2765245A1 (fr) | 1998-12-31 |
| FR2765245B1 true FR2765245B1 (fr) | 1999-09-17 |
Family
ID=9508413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9707939A Expired - Fee Related FR2765245B1 (fr) | 1997-06-25 | 1997-06-25 | Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectronique |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2765245B1 (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0867701A1 (fr) | 1997-03-28 | 1998-09-30 | Interuniversitair Microelektronica Centrum Vzw | Procédé de réalisation d'un détecteur de rayonnement sensible à l'infrarouge, notamment un bolomètre sensible à l'infrarouge |
| US7176111B2 (en) | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
| FR2804542B1 (fr) * | 2000-02-01 | 2004-04-23 | Air Liquide | Procede et dispositif pour la formation de couches minces de composes de silicium et de germanium |
| ATE440378T1 (de) * | 2000-04-05 | 2009-09-15 | Imec | Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige |
| FR2823009B1 (fr) * | 2001-04-02 | 2004-07-09 | St Microelectronics Sa | Procede de fabrication d'un transistor vertical a grille isolee a faible recouvrement de la grille sur la source et sur le drain, et circuit integre comportant un tel transistor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2965094B2 (ja) * | 1991-06-28 | 1999-10-18 | キヤノン株式会社 | 堆積膜形成方法 |
| US5273930A (en) * | 1992-09-03 | 1993-12-28 | Motorola, Inc. | Method of forming a non-selective silicon-germanium epitaxial film |
| US5620907A (en) * | 1995-04-10 | 1997-04-15 | Lucent Technologies Inc. | Method for making a heterojunction bipolar transistor |
-
1997
- 1997-06-25 FR FR9707939A patent/FR2765245B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2765245A1 (fr) | 1998-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2783254B1 (fr) | Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus | |
| FR2725074B1 (fr) | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat | |
| FR2773177B1 (fr) | Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus | |
| FR2787061B1 (fr) | Procede et installation de marquage superficiel d'un substrat | |
| FR2708924B1 (fr) | Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent. | |
| FR2767603B1 (fr) | Procede de fabrication d'un dispositif a semiconducteur sur un substrat semiconducteur | |
| FR2763343B1 (fr) | Procede de depot d'une couche de matiere sur un substrat a l'aide d'un systeme de placage | |
| FR2817042B1 (fr) | Procede et dispositif d'analyse de la surface d'un substrat | |
| CH690684A8 (fr) | Substrat portant un revetement et son procede de fbrication. | |
| FR2775280B1 (fr) | Procede de gravure d'une couche conductrice | |
| DE69604132T2 (de) | Beschichtetes Substrat | |
| FR2812764B1 (fr) | Procede de fabrication d'un substrat de type substrat-sur- isolant ou substrat-sur-vide et dispositif obtenu | |
| NO951871D0 (no) | Fremgangsmåte for dannelse av et sölvbelegg på et vitröst substrat | |
| FR2756096B1 (fr) | Procede de production d'un dispositif d'affichage a plasma et structure de substrat correspondante | |
| FR2746415B1 (fr) | Substrat revetu d'une couche polycristalline de diamant | |
| FR2788457B1 (fr) | Procede d'obtention d'un motif sur un substrat en materiau verrier | |
| FR2765393B1 (fr) | Procede de gravure d'une couche de si1-xgex polycristallin ou d'un empilement d'une couche de si1-xgex polycristallin et d'une couche de si polycristallin, et son application a la microelectronique | |
| FR2601816B1 (fr) | Procede de formation sur un substrat d'une couche de materiau semi-conducteur a base d'elements des groupes ii et vi | |
| FR2772982B1 (fr) | Substrat d'anode pour un dispositif d'affichage et son procede de fabrication | |
| FR2830856B1 (fr) | Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire | |
| FR2842651B1 (fr) | Procede de lissage du contour d'une couche utile de materiau reportee sur un substrat support | |
| FR2765245B1 (fr) | Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectronique | |
| FR2728103B1 (fr) | Substrat de base en si recouvert d'une couche de cdte ou de cdznte riche en cd et procede pour sa production | |
| FR2788456B1 (fr) | Procede d'obtention d'un motif sur un substrat en materiau verrier | |
| FR2747837B1 (fr) | Panneau d'affichage a plasma, procede de formation de nervures de barrage et structure de substrat |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20130228 |