DE69811968T2 - Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer - Google Patents

Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer

Info

Publication number
DE69811968T2
DE69811968T2 DE69811968T DE69811968T DE69811968T2 DE 69811968 T2 DE69811968 T2 DE 69811968T2 DE 69811968 T DE69811968 T DE 69811968T DE 69811968 T DE69811968 T DE 69811968T DE 69811968 T2 DE69811968 T2 DE 69811968T2
Authority
DE
Germany
Prior art keywords
layer
infrared
bolometer
infrared absorber
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69811968T
Other languages
German (de)
English (en)
Other versions
DE69811968D1 (de
Inventor
Christiaan Baert
Matty Caymax
Paolo Fiorini
Sherif Sedky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imec
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of DE69811968D1 publication Critical patent/DE69811968D1/de
Publication of DE69811968T2 publication Critical patent/DE69811968T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/017—Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
DE69811968T 1997-03-28 1998-03-26 Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer Expired - Lifetime DE69811968T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97870044A EP0867701A1 (en) 1997-03-28 1997-03-28 Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer

Publications (2)

Publication Number Publication Date
DE69811968D1 DE69811968D1 (de) 2003-04-17
DE69811968T2 true DE69811968T2 (de) 2003-12-11

Family

ID=8230989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69811968T Expired - Lifetime DE69811968T2 (de) 1997-03-28 1998-03-26 Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer

Country Status (4)

Country Link
US (5) US6194722B1 (enExample)
EP (3) EP0867701A1 (enExample)
JP (2) JPH1140824A (enExample)
DE (1) DE69811968T2 (enExample)

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EP1263056A2 (en) 2002-12-04
US20010055833A1 (en) 2001-12-27
US6884636B2 (en) 2005-04-26
US7320896B2 (en) 2008-01-22
US20060289764A1 (en) 2006-12-28
US6274462B1 (en) 2001-08-14
EP0867702A2 (en) 1998-09-30
EP0867702A3 (en) 1998-10-21
JPH1140824A (ja) 1999-02-12
US20050012040A1 (en) 2005-01-20
US7075081B2 (en) 2006-07-11
EP0867702B1 (en) 2003-03-12
JP2007165927A (ja) 2007-06-28
EP1263056A3 (en) 2003-12-03
US6194722B1 (en) 2001-02-27
EP0867701A1 (en) 1998-09-30
DE69811968D1 (de) 2003-04-17

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