DE69811968T2 - Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer - Google Patents

Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer

Info

Publication number
DE69811968T2
DE69811968T2 DE69811968T DE69811968T DE69811968T2 DE 69811968 T2 DE69811968 T2 DE 69811968T2 DE 69811968 T DE69811968 T DE 69811968T DE 69811968 T DE69811968 T DE 69811968T DE 69811968 T2 DE69811968 T2 DE 69811968T2
Authority
DE
Germany
Prior art keywords
layer
infrared
bolometer
infrared absorber
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69811968T
Other languages
German (de)
English (en)
Other versions
DE69811968D1 (de
Inventor
Christiaan Baert
Matty Caymax
Paolo Fiorini
Sherif Sedky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of DE69811968D1 publication Critical patent/DE69811968D1/de
Application granted granted Critical
Publication of DE69811968T2 publication Critical patent/DE69811968T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/017—Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
DE69811968T 1997-03-28 1998-03-26 Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer Expired - Lifetime DE69811968T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97870044A EP0867701A1 (en) 1997-03-28 1997-03-28 Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer

Publications (2)

Publication Number Publication Date
DE69811968D1 DE69811968D1 (de) 2003-04-17
DE69811968T2 true DE69811968T2 (de) 2003-12-11

Family

ID=8230989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69811968T Expired - Lifetime DE69811968T2 (de) 1997-03-28 1998-03-26 Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer

Country Status (4)

Country Link
US (5) US6194722B1 (enExample)
EP (3) EP0867701A1 (enExample)
JP (2) JPH1140824A (enExample)
DE (1) DE69811968T2 (enExample)

Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
EP1136440A1 (en) * 2000-03-24 2001-09-26 Interuniversitair Micro-Elektronica Centrum Vzw Method of improving mechanical strenghtin micro electro mechanical systems and devices produced thereof
US7176111B2 (en) 1997-03-28 2007-02-13 Interuniversitair Microelektronica Centrum (Imec) Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
ATE283549T1 (de) * 1997-06-24 2004-12-15 Massachusetts Inst Technology Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung
US7227176B2 (en) * 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
CN1118103C (zh) * 1998-10-21 2003-08-13 李韫言 微细加工热辐射红外传感器
AU3346000A (en) * 1999-01-15 2000-08-01 Regents Of The University Of California, The Polycrystalline silicon germanium films for forming micro-electromechanical systems
JP2001153720A (ja) * 1999-11-30 2001-06-08 Nec Corp 熱型赤外線検出器
CN1217417C (zh) * 1999-12-10 2005-08-31 株式会社半导体能源研究所 半导体器件及其制造方法
JP2001264441A (ja) * 2000-01-14 2001-09-26 Seiko Instruments Inc カロリーメーターとその製造方法
US6750130B1 (en) 2000-01-20 2004-06-15 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
JP2003520444A (ja) * 2000-01-20 2003-07-02 アンバーウェーブ システムズ コーポレイション 高温成長を不要とする低貫通転位密度格子不整合エピ層
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
WO2001063232A1 (en) * 2000-02-24 2001-08-30 University Of Virginia Patent Foundation High sensitivity infrared sensing apparatus and related method thereof
EP1251099A3 (en) * 2000-03-24 2004-07-21 Interuniversitair Microelektronica Centrum Vzw Method of improving mechanical strength in micro electro mechanical systems and devices produced thereof
DE60139610D1 (de) * 2000-04-05 2009-10-01 Imec Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige
US7078321B2 (en) 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
AU2001283138A1 (en) 2000-08-07 2002-02-18 Amberwave Systems Corporation Gate technology for strained surface channel and strained buried channel mosfet devices
DE60125952T2 (de) * 2000-08-16 2007-08-02 Massachusetts Institute Of Technology, Cambridge Verfahren für die herstellung eines halbleiterartikels mittels graduellem epitaktischen wachsen
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6649480B2 (en) 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
DE10102993B4 (de) * 2001-01-24 2009-01-08 Robert Bosch Gmbh Herstellungsverfahren für ein mikromechanisches Bauelement
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6489616B2 (en) * 2001-03-19 2002-12-03 The Board Of Governors Of Southwest Missouri State University Doped, organic carbon-containing sensor for infrared detection and a process for the preparation thereof
US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
AU2002322105A1 (en) * 2001-06-14 2003-01-02 Amberware Systems Corporation Method of selective removal of sige alloys
FR2827707B1 (fr) * 2001-07-20 2003-11-21 Fr De Detecteurs Infrarouges S Procede de realisation d'un detecteur bolometrique et detecteur realise selon ce procede
WO2003025984A2 (en) 2001-09-21 2003-03-27 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
AU2002341803A1 (en) 2001-09-24 2003-04-07 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
WO2003045837A2 (en) * 2001-11-26 2003-06-05 Wisconsin Alumni Research Foundation Stress control of semiconductor microstructures for thin film growth
US6780786B2 (en) * 2001-11-26 2004-08-24 The Regents Of The University Of California Method for producing a porous silicon film
US6793389B2 (en) * 2002-02-04 2004-09-21 Delphi Technologies, Inc. Monolithically-integrated infrared sensor
AU2003222003A1 (en) 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
FI114658B (fi) 2002-06-03 2004-11-30 Metorex Internat Oy Suprajohtava antennikytketty kuumapistemikrobolometri, menetelmät sellaisen valmistamiseksi ja käyttämiseksi sekä bolometrinen kuvantamisjärjestely
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7615829B2 (en) * 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
WO2003105206A1 (en) * 2002-06-10 2003-12-18 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) * 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7375385B2 (en) 2002-08-23 2008-05-20 Amberwave Systems Corporation Semiconductor heterostructures having reduced dislocation pile-ups
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
US7210653B2 (en) * 2002-10-22 2007-05-01 The Boeing Company Electric-based secondary power system architectures for aircraft
WO2004068556A2 (en) 2003-01-27 2004-08-12 Amberwave Systems Corporation Semiconductor structures with structural homogeneity
WO2004081982A2 (en) * 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
FR2864065B1 (fr) * 2003-12-22 2006-02-24 Univ Toulouse Utilisation de ferrites spinelles comme materiau sensible pour dispositifs bolometriques de detection de l'infrarouge.
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
KR100827314B1 (ko) * 2005-10-10 2008-05-06 삼성전기주식회사 열처리에 의해 평탄면을 가지는 멤스 소자 및 광변조기제조 방법
US20080085334A1 (en) * 2006-10-10 2008-04-10 Husky Injection Molding Systems Ltd. Hot Runner System Sensor
US20080185522A1 (en) * 2007-02-06 2008-08-07 Shih-Chia Chang Infrared sensors and methods for manufacturing the infrared sensors
US7795605B2 (en) * 2007-06-29 2010-09-14 International Business Machines Corporation Phase change material based temperature sensor
US7622717B2 (en) * 2007-08-22 2009-11-24 Drs Sensors & Targeting Systems, Inc. Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption
US20100203243A1 (en) * 2007-12-27 2010-08-12 Applied Materials, Inc. Method for forming a polysilicon film
WO2010127298A2 (en) * 2009-04-30 2010-11-04 Sionyx, Inc. Low oxygen content semiconductor material for surface enhanced photonic devices associated methods
US20100320548A1 (en) * 2009-06-18 2010-12-23 Analog Devices, Inc. Silicon-Rich Nitride Etch Stop Layer for Vapor HF Etching in MEMS Device Fabrication
US20110203648A1 (en) * 2009-08-20 2011-08-25 James Carey Laser processed heterojunction photovoltaic devices and associated methods
US8476598B1 (en) 2009-08-31 2013-07-02 Sionyx, Inc. Electromagnetic radiation imaging devices and associated methods
US8309389B1 (en) 2009-09-10 2012-11-13 Sionyx, Inc. Photovoltaic semiconductor devices and associated methods
US8657227B1 (en) 2009-09-11 2014-02-25 The Boeing Company Independent power generation in aircraft
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8476681B2 (en) 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2478560A4 (en) * 2009-09-17 2014-06-18 Sionyx Inc LIGHT-SENSITIVE IMAGING DEVICES AND CORRESPONDING METHODS
US20110095387A1 (en) * 2009-10-22 2011-04-28 James Carey Semiconductor devices having an enhanced absorption region and associated methods
JP5644120B2 (ja) * 2010-01-26 2014-12-24 セイコーエプソン株式会社 熱型光検出器、熱型光検出装置、電子機器および熱型光検出器の製造方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN101832831B (zh) * 2010-04-22 2015-01-28 无锡市纳微电子有限公司 一种压阻传感器芯片及其制作方法
MD340Z (ro) * 2010-04-23 2011-09-30 Институт Электронной Инженерии И Промышленных Технологий Bolometru
CN106449684B (zh) 2010-06-18 2019-09-27 西奥尼克斯公司 高速光敏设备及相关方法
US8738268B2 (en) 2011-03-10 2014-05-27 The Boeing Company Vehicle electrical power management and distribution
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
CN103946867A (zh) 2011-07-13 2014-07-23 西奥尼克斯公司 生物计量成像装置和相关方法
US9151597B2 (en) 2012-02-13 2015-10-06 First Solar, Inc. In situ substrate detection for a processing system using infrared detection
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
DE102014112672B4 (de) 2014-09-03 2018-05-09 Snaptrack, Inc. Abdeckung für ein Bauelement und Verfahren zur Herstellung einer Abdeckung für ein Bauelement
US9864138B2 (en) 2015-01-05 2018-01-09 The Research Foundation For The State University Of New York Integrated photonics including germanium
CN104614086B (zh) * 2015-03-06 2017-05-03 上海新微技术研发中心有限公司 气压式温度传感器及其制作方法
US9915567B2 (en) * 2016-06-28 2018-03-13 Excelitas Technologies Singapore Pte. Ltd. Unreleased thermopile infrared sensor using material transfer method
CN106653940B (zh) * 2016-11-21 2018-06-01 深圳信息职业技术学院 张应变锗msm光电探测器及其制备方法
US10976491B2 (en) 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
TWI646672B (zh) 2017-12-01 2019-01-01 財團法人工業技術研究院 紅外線感測元件及其製造方法
US10424608B1 (en) 2018-01-31 2019-09-24 Hrl Laboratories, Llc Fabrication of polycrystalline semiconductor infrared detector
US10490689B1 (en) 2018-01-31 2019-11-26 Hrl Laboratories, Llc Grain boundary passivation of polycrystalline materials
EP3776074B1 (en) 2018-04-04 2023-11-22 The Research Foundation for the State University of New York Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
TWI851601B (zh) 2018-11-21 2024-08-11 紐約州立大學研究基金會 光子光電系統及其製造方法
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
CN113015889B (zh) * 2019-02-28 2024-04-02 松下知识产权经营株式会社 红外线传感器、红外线传感器阵列及红外线传感器的制造方法
KR20220086548A (ko) 2019-06-18 2022-06-23 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 포토닉스 구조 도전성 광 경로 제조
JP7309138B2 (ja) * 2020-12-25 2023-07-18 国立大学法人横浜国立大学 赤外線吸収体および赤外線吸収体を備えるガスセンサ
TWI825710B (zh) 2022-05-10 2023-12-11 財團法人工業技術研究院 紅外線元件及其製造方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239312A (en) * 1978-11-29 1980-12-16 Hughes Aircraft Company Parallel interconnect for planar arrays
US5220188A (en) 1983-07-06 1993-06-15 Honeywell Inc. Integrated micromechanical sensor element
US5220189A (en) 1983-07-06 1993-06-15 Honeywell Inc. Micromechanical thermoelectric sensor element
JPH0664906B2 (ja) * 1984-11-30 1994-08-22 キヤノン株式会社 固体メモリ−
US5300915A (en) * 1986-07-16 1994-04-05 Honeywell Inc. Thermal sensor
US4902894A (en) * 1986-09-26 1990-02-20 Honeywell Inc. Gate coupled input circuit
JPS63121851A (ja) * 1986-11-11 1988-05-25 Canon Inc 電子写真用光受容部材
US5010251A (en) * 1988-08-04 1991-04-23 Hughes Aircraft Company Radiation detector array using radiation sensitive bridges
US5021663B1 (en) * 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
US5286976A (en) 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
CA2081306C (en) * 1990-04-26 2000-07-18 Kevin Charles Liddiard Semiconductor film bolometer thermal infrared detector
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5260225A (en) * 1991-12-20 1993-11-09 Honeywell Inc. Integrated infrared sensitive bolometers
US5291055A (en) * 1992-01-28 1994-03-01 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Resonant infrared detector with substantially unit quantum efficiency
US5357803A (en) * 1992-04-08 1994-10-25 Rochester Institute Of Technology Micromachined microaccelerometer for measuring acceleration along three axes
US5241193A (en) 1992-05-19 1993-08-31 Motorola, Inc. Semiconductor device having a thin-film transistor and process
WO1993026050A1 (en) 1992-06-11 1993-12-23 Honeywell Inc. Two-level microbridge bolometer imaging array and method of making same
US5444302A (en) * 1992-12-25 1995-08-22 Hitachi, Ltd. Semiconductor device including multi-layer conductive thin film of polycrystalline material
US5371035A (en) * 1993-02-01 1994-12-06 Motorola Inc. Method for forming electrical isolation in an integrated circuit device
ATE269588T1 (de) * 1993-02-04 2004-07-15 Cornell Res Foundation Inc Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren
US5396280A (en) * 1993-02-26 1995-03-07 International Business Machines, Corporation Analog video processing apparatus and method for eliminating background levels in the analog signal
US5426070A (en) * 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5399897A (en) 1993-11-29 1995-03-21 Raytheon Company Microstructure and method of making such structure
US5883564A (en) * 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
US5858819A (en) * 1994-06-15 1999-01-12 Seiko Epson Corporation Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
JP2615429B2 (ja) * 1994-09-13 1997-05-28 工業技術院長 ３次元立体形状の創成法
WO1996015550A1 (en) * 1994-11-10 1996-05-23 Lawrence Semiconductor Research Laboratory, Inc. Silicon-germanium-carbon compositions and processes thereof
JP2674545B2 (ja) * 1995-01-20 1997-11-12 日本電気株式会社 赤外線検出器及びその駆動方法
JPH08261832A (ja) * 1995-03-20 1996-10-11 Fujitsu Ltd 赤外線センサ及びその製造方法
JP3287173B2 (ja) * 1995-04-07 2002-05-27 三菱電機株式会社 赤外線検出素子
JPH08335707A (ja) * 1995-06-08 1996-12-17 Nippondenso Co Ltd 半導体力学量センサ及びその製造方法
US6211560B1 (en) * 1995-06-16 2001-04-03 The United States Of America As Represented By The Secretary Of The Air Force Voltage tunable schottky diode photoemissive infrared detector
JPH0953980A (ja) * 1995-08-18 1997-02-25 Nikon Corp 熱型赤外線センサ
US5919364A (en) 1996-06-24 1999-07-06 Regents Of The University Of California Microfabricated filter and shell constructed with a permeable membrane
GB9619706D0 (en) 1996-09-20 1996-11-06 Pharmacia Spa Synergistic immunosuppressant composition containing a 2,2'-bi-1H-pyrrole comp und
US6707121B2 (en) * 1997-03-28 2004-03-16 Interuniversitair Microelektronica Centrum (Imec Vzw) Micro electro mechanical systems and devices
EP0867701A1 (en) * 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
FR2765245B1 (fr) 1997-06-25 1999-09-17 France Telecom Procede d'obtention d'une couche de silicium-germanium polycristallin sur un substrat et son application a la microelectronique
US6689211B1 (en) * 1999-04-09 2004-02-10 Massachusetts Institute Of Technology Etch stop layer system
US6238581B1 (en) 1998-12-18 2001-05-29 Eastman Kodak Company Process for manufacturing an electro-mechanical grating device
US6534381B2 (en) 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
AU3346000A (en) * 1999-01-15 2000-08-01 Regents Of The University Of California, The Polycrystalline silicon germanium films for forming micro-electromechanical systems
US6822304B1 (en) * 1999-11-12 2004-11-23 The Board Of Trustees Of The Leland Stanford Junior University Sputtered silicon for microstructures and microcavities
US6346453B1 (en) * 2000-01-27 2002-02-12 Sige Microsystems Inc. Method of producing a SI-GE base heterojunction bipolar device
EP1251099A3 (en) * 2000-03-24 2004-07-21 Interuniversitair Microelektronica Centrum Vzw Method of improving mechanical strength in micro electro mechanical systems and devices produced thereof
DE60139610D1 (de) * 2000-04-05 2009-10-01 Imec Verfahren zum abscheiden eines zur mikrobearbeitung geeigneten polykristallinen sige
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
US6587613B2 (en) * 2001-07-24 2003-07-01 Innovative Technology Licensing, Llc Hybrid MEMS fabrication method and new optical MEMS device
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US6666979B2 (en) * 2001-10-29 2003-12-23 Applied Materials, Inc. Dry etch release of MEMS structures
US6770569B2 (en) * 2002-08-01 2004-08-03 Freescale Semiconductor, Inc. Low temperature plasma Si or SiGe for MEMS applications

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EP0867702B1 (en) 2003-03-12
US20050012040A1 (en) 2005-01-20
JP2007165927A (ja) 2007-06-28
US7075081B2 (en) 2006-07-11
US7320896B2 (en) 2008-01-22
DE69811968D1 (de) 2003-04-17
EP0867701A1 (en) 1998-09-30
EP1263056A2 (en) 2002-12-04
US6274462B1 (en) 2001-08-14
EP1263056A3 (en) 2003-12-03
US6194722B1 (en) 2001-02-27
US20060289764A1 (en) 2006-12-28
EP0867702A2 (en) 1998-09-30
US20010055833A1 (en) 2001-12-27
EP0867702A3 (en) 1998-10-21
JPH1140824A (ja) 1999-02-12
US6884636B2 (en) 2005-04-26

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