DE69811968D1 - Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer - Google Patents

Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer

Info

Publication number
DE69811968D1
DE69811968D1 DE69811968T DE69811968T DE69811968D1 DE 69811968 D1 DE69811968 D1 DE 69811968D1 DE 69811968 T DE69811968 T DE 69811968T DE 69811968 T DE69811968 T DE 69811968T DE 69811968 D1 DE69811968 D1 DE 69811968D1
Authority
DE
Germany
Prior art keywords
infrared
sensitive
manufacturing
radiation detector
bolometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69811968T
Other languages
English (en)
Other versions
DE69811968T2 (de
Inventor
Paolo Fiorini
Sherif Sedky
Matty Caymax
Christiaan Baert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Application granted granted Critical
Publication of DE69811968D1 publication Critical patent/DE69811968D1/de
Publication of DE69811968T2 publication Critical patent/DE69811968T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/017—Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
DE69811968T 1997-03-28 1998-03-26 Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer Expired - Lifetime DE69811968T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97870044A EP0867701A1 (de) 1997-03-28 1997-03-28 Herstellungsverfahren eines infrarotempfindlichen Strahlungsdetektors, insbesondere eines infrarotempfindlichen Bolometers

Publications (2)

Publication Number Publication Date
DE69811968D1 true DE69811968D1 (de) 2003-04-17
DE69811968T2 DE69811968T2 (de) 2003-12-11

Family

ID=8230989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69811968T Expired - Lifetime DE69811968T2 (de) 1997-03-28 1998-03-26 Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer

Country Status (4)

Country Link
US (5) US6194722B1 (de)
EP (3) EP0867701A1 (de)
JP (2) JPH1140824A (de)
DE (1) DE69811968T2 (de)

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DE69811968T2 (de) 2003-12-11
US20010055833A1 (en) 2001-12-27
EP0867702A3 (de) 1998-10-21
US6274462B1 (en) 2001-08-14
US20050012040A1 (en) 2005-01-20
EP0867702A2 (de) 1998-09-30
US6194722B1 (en) 2001-02-27
JPH1140824A (ja) 1999-02-12
EP1263056A3 (de) 2003-12-03
JP2007165927A (ja) 2007-06-28
EP0867701A1 (de) 1998-09-30
US7075081B2 (en) 2006-07-11
EP0867702B1 (de) 2003-03-12
US20060289764A1 (en) 2006-12-28
US6884636B2 (en) 2005-04-26
EP1263056A2 (de) 2002-12-04
US7320896B2 (en) 2008-01-22

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