KR960702950A - 광 및 방사선 검출기 및 그 제조방법 - Google Patents

광 및 방사선 검출기 및 그 제조방법

Info

Publication number
KR960702950A
KR960702950A KR1019950705423A KR19950705423A KR960702950A KR 960702950 A KR960702950 A KR 960702950A KR 1019950705423 A KR1019950705423 A KR 1019950705423A KR 19950705423 A KR19950705423 A KR 19950705423A KR 960702950 A KR960702950 A KR 960702950A
Authority
KR
South Korea
Prior art keywords
optical
manufacturing
radiation detector
detector
radiation
Prior art date
Application number
KR1019950705423A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960702950A publication Critical patent/KR960702950A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1019950705423A 1994-03-28 1995-11-28 광 및 방사선 검출기 및 그 제조방법 KR960702950A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5736894 1994-03-28
PCT/JP1995/000559 WO1995026573A1 (fr) 1994-03-28 1995-03-27 Detecteur de lumiere et de rayonnement a semi-conducteur

Publications (1)

Publication Number Publication Date
KR960702950A true KR960702950A (ko) 1996-05-23

Family

ID=13053653

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950705423A KR960702950A (ko) 1994-03-28 1995-11-28 광 및 방사선 검출기 및 그 제조방법

Country Status (5)

Country Link
US (1) US6001667A (ko)
KR (1) KR960702950A (ko)
CN (1) CN1130442A (ko)
TW (1) TW275717B (ko)
WO (1) WO1995026573A1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
US6737626B1 (en) * 2001-08-06 2004-05-18 Pixim, Inc. Image sensors with underlying and lateral insulator structures
US20030049925A1 (en) * 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
US6656761B2 (en) * 2001-11-21 2003-12-02 Motorola, Inc. Method for forming a semiconductor device for detecting light
US20040164321A1 (en) * 2003-02-26 2004-08-26 Dialog Semiconductor Vertical charge transfer active pixel sensor
US20070210342A1 (en) * 2003-02-26 2007-09-13 Dialog Imaging Systems Gmbh Vertical charge transfer active pixel sensor
JP4247017B2 (ja) 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
US6864156B1 (en) * 2003-04-04 2005-03-08 Xilinx, Inc. Semiconductor wafer with well contacts on back side
JP4824542B2 (ja) * 2003-05-08 2011-11-30 ザ サイエンス アンド テクノロジー ファシリティーズ カウンシル 電子顕微鏡
KR100561004B1 (ko) * 2003-12-30 2006-03-16 동부아남반도체 주식회사 씨모스 이미지 센서 및 그 제조 방법
US20080001247A1 (en) * 2006-06-30 2008-01-03 Abadeer Wagdi W Mesa Optical Sensors and Methods of Manufacturing the Same
US7586108B2 (en) * 2007-06-25 2009-09-08 Asml Netherlands B.V. Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
JP2009060001A (ja) * 2007-09-03 2009-03-19 Casio Comput Co Ltd フォトトランジスタ
CN102110649A (zh) * 2009-12-28 2011-06-29 北大方正集团有限公司 一种改善铝栅互补金属氧化物半导体静态电流失效的方法
US9006827B2 (en) * 2011-11-09 2015-04-14 International Business Machines Corporation Radiation hardened memory cell and design structures
CN103137776B (zh) * 2013-01-31 2015-05-27 西安电子科技大学 谐振腔式的双mos光电探测器
CN106908388A (zh) * 2017-03-16 2017-06-30 亿信标准认证集团有限公司 关于工厂废水排放的液体浓度标准认证检测系统
EP4135038A4 (en) * 2020-04-10 2024-02-21 Optohub Co Ltd SEMICONDUCTOR IMAGE SENSOR

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505557B1 (ko) * 1969-05-22 1975-03-05
JPS5066190A (ko) * 1973-10-11 1975-06-04
JPS5336180A (en) * 1976-09-16 1978-04-04 Hitachi Ltd Production of semiconductor device
JPH01238154A (ja) * 1988-03-18 1989-09-22 Canon Inc 光電変換装置
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
DE4209536C3 (de) * 1992-03-24 2000-10-05 Stuttgart Mikroelektronik Bildzelle für einen Bildaufnehmer-Chip
US5541122A (en) * 1995-04-03 1996-07-30 Motorola Inc. Method of fabricating an insulated-gate bipolar transistor

Also Published As

Publication number Publication date
US6001667A (en) 1999-12-14
CN1130442A (zh) 1996-09-04
WO1995026573A1 (fr) 1995-10-05
TW275717B (ko) 1996-05-11

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Legal Events

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