JPH11354441A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH11354441A JPH11354441A JP15948198A JP15948198A JPH11354441A JP H11354441 A JPH11354441 A JP H11354441A JP 15948198 A JP15948198 A JP 15948198A JP 15948198 A JP15948198 A JP 15948198A JP H11354441 A JPH11354441 A JP H11354441A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- semiconductor device
- amorphous
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 152
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 238000000137 annealing Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005224 laser annealing Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15948198A JPH11354441A (ja) | 1998-06-08 | 1998-06-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15948198A JPH11354441A (ja) | 1998-06-08 | 1998-06-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11354441A true JPH11354441A (ja) | 1999-12-24 |
| JPH11354441A5 JPH11354441A5 (enExample) | 2004-09-24 |
Family
ID=15694722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15948198A Withdrawn JPH11354441A (ja) | 1998-06-08 | 1998-06-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11354441A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001217428A (ja) * | 2000-01-25 | 2001-08-10 | Samsung Electronics Co Ltd | 低温多結晶シリコン形薄膜トランジスタ−及びその製造方法 |
| JP2002353236A (ja) * | 2001-05-23 | 2002-12-06 | Matsushita Electric Ind Co Ltd | ポリシリコン薄膜トランジスタの製造方法 |
| JP2006147841A (ja) * | 2004-11-19 | 2006-06-08 | Ushio Inc | フラッシュランプ発光装置 |
| JP2007142027A (ja) * | 2005-11-16 | 2007-06-07 | Hitachi Displays Ltd | 表示装置の製造方法 |
| CN100336189C (zh) * | 2003-07-29 | 2007-09-05 | 三菱电机株式会社 | 薄膜晶体管的制造方法 |
| JP2009004770A (ja) * | 2007-06-19 | 2009-01-08 | Samsung Sdi Co Ltd | 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 |
| JP2015099853A (ja) * | 2013-11-19 | 2015-05-28 | 株式会社ジャパンディスプレイ | 多結晶化方法 |
-
1998
- 1998-06-08 JP JP15948198A patent/JPH11354441A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001217428A (ja) * | 2000-01-25 | 2001-08-10 | Samsung Electronics Co Ltd | 低温多結晶シリコン形薄膜トランジスタ−及びその製造方法 |
| JP2002353236A (ja) * | 2001-05-23 | 2002-12-06 | Matsushita Electric Ind Co Ltd | ポリシリコン薄膜トランジスタの製造方法 |
| CN100336189C (zh) * | 2003-07-29 | 2007-09-05 | 三菱电机株式会社 | 薄膜晶体管的制造方法 |
| JP2006147841A (ja) * | 2004-11-19 | 2006-06-08 | Ushio Inc | フラッシュランプ発光装置 |
| JP2007142027A (ja) * | 2005-11-16 | 2007-06-07 | Hitachi Displays Ltd | 表示装置の製造方法 |
| JP2009004770A (ja) * | 2007-06-19 | 2009-01-08 | Samsung Sdi Co Ltd | 多結晶シリコン層の製造方法、これを用いて形成した薄膜トランジスタ、その製造方法、並びに、これを備えた有機電界発光表示装置 |
| US7825476B2 (en) | 2007-06-19 | 2010-11-02 | Samsung Mobile Display Co., Ltd. | Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT |
| US8445336B2 (en) | 2007-06-19 | 2013-05-21 | Samsung Display Co., Ltd. | Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT |
| JP2015099853A (ja) * | 2013-11-19 | 2015-05-28 | 株式会社ジャパンディスプレイ | 多結晶化方法 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20041201 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070424 |
|
| A761 | Written withdrawal of application |
Effective date: 20070619 Free format text: JAPANESE INTERMEDIATE CODE: A761 |