JPH11330483A - 半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器 - Google Patents
半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器Info
- Publication number
- JPH11330483A JPH11330483A JP13890598A JP13890598A JPH11330483A JP H11330483 A JPH11330483 A JP H11330483A JP 13890598 A JP13890598 A JP 13890598A JP 13890598 A JP13890598 A JP 13890598A JP H11330483 A JPH11330483 A JP H11330483A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- impurity
- drain
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 82
- 239000012535 impurity Substances 0.000 claims description 76
- 239000010408 film Substances 0.000 claims description 61
- 239000003990 capacitor Substances 0.000 claims description 46
- 238000003860 storage Methods 0.000 claims description 38
- 239000011229 interlayer Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 52
- 150000002500 ions Chemical class 0.000 abstract description 39
- 238000005468 ion implantation Methods 0.000 abstract description 15
- 238000002513 implantation Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13890598A JPH11330483A (ja) | 1998-05-20 | 1998-05-20 | 半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13890598A JPH11330483A (ja) | 1998-05-20 | 1998-05-20 | 半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11330483A true JPH11330483A (ja) | 1999-11-30 |
| JPH11330483A5 JPH11330483A5 (enExample) | 2004-08-05 |
Family
ID=15232883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13890598A Pending JPH11330483A (ja) | 1998-05-20 | 1998-05-20 | 半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11330483A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002098997A (ja) * | 2000-09-25 | 2002-04-05 | Toshiba Corp | 液晶表示装置 |
| JP2002169171A (ja) * | 2000-11-30 | 2002-06-14 | Nec Corp | 反射型液晶表示装置及びその製造方法 |
| JP2006516754A (ja) * | 2003-02-04 | 2006-07-06 | プラスティック ロジック リミテッド | トランジスタ制御表示装置 |
-
1998
- 1998-05-20 JP JP13890598A patent/JPH11330483A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002098997A (ja) * | 2000-09-25 | 2002-04-05 | Toshiba Corp | 液晶表示装置 |
| JP2002169171A (ja) * | 2000-11-30 | 2002-06-14 | Nec Corp | 反射型液晶表示装置及びその製造方法 |
| JP2006516754A (ja) * | 2003-02-04 | 2006-07-06 | プラスティック ロジック リミテッド | トランジスタ制御表示装置 |
| US8400576B2 (en) | 2003-02-04 | 2013-03-19 | Plastic Logic Limited | Transistor-controlled display devices |
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Legal Events
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| A977 | Report on retrieval |
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