JPH11330483A5 - - Google Patents
Info
- Publication number
- JPH11330483A5 JPH11330483A5 JP1998138905A JP13890598A JPH11330483A5 JP H11330483 A5 JPH11330483 A5 JP H11330483A5 JP 1998138905 A JP1998138905 A JP 1998138905A JP 13890598 A JP13890598 A JP 13890598A JP H11330483 A5 JPH11330483 A5 JP H11330483A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity
- electrode
- drain
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13890598A JPH11330483A (ja) | 1998-05-20 | 1998-05-20 | 半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13890598A JPH11330483A (ja) | 1998-05-20 | 1998-05-20 | 半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11330483A JPH11330483A (ja) | 1999-11-30 |
| JPH11330483A5 true JPH11330483A5 (enExample) | 2004-08-05 |
Family
ID=15232883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13890598A Pending JPH11330483A (ja) | 1998-05-20 | 1998-05-20 | 半導体装置の製造方法、半導体装置及び電気光学装置並びに電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11330483A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002098997A (ja) * | 2000-09-25 | 2002-04-05 | Toshiba Corp | 液晶表示装置 |
| JP4632522B2 (ja) * | 2000-11-30 | 2011-02-16 | Nec液晶テクノロジー株式会社 | 反射型液晶表示装置の製造方法 |
| GB0302485D0 (en) | 2003-02-04 | 2003-03-05 | Plastic Logic Ltd | Pixel capacitors |
-
1998
- 1998-05-20 JP JP13890598A patent/JPH11330483A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5276344A (en) | Field effect transistor having impurity regions of different depths and manufacturing method thereof | |
| TW200419780A (en) | Semiconductor device, dynamic semiconductor memory, and manufacturing method of semiconductor device | |
| KR950015659A (ko) | 고집적 반도체장치 및 그 제조방법 | |
| JP2004214379A5 (enExample) | ||
| KR930001409A (ko) | 바이씨모스장치 및 그 제조 방법 | |
| EP0886317A3 (en) | Dielectric device, Dielectric memory and method of fabricating the same | |
| EP1148552A3 (en) | Vertical transistor DRAM cell with stacked storage capacitor and associated method cell | |
| KR0135067B1 (ko) | 반도체 장치의 메모리셀 제조방법 및 구조 | |
| CN1228616A (zh) | 具有金属硅化物薄膜的半导体器件及制造方法 | |
| JPH11330483A5 (enExample) | ||
| KR100284656B1 (ko) | 반도체 기억장치 및 그 제조방법 | |
| US5773310A (en) | Method for fabricating a MOS transistor | |
| US5780337A (en) | Method of fabricating a bit line of a dynamic random access memory | |
| JP2969876B2 (ja) | 半導体装置およびその製造方法 | |
| KR940012614A (ko) | 고집적 반도체 접속장치 및 그 제조방법 | |
| JPS62213273A (ja) | ダイナミツクランダムアクセスメモリ | |
| KR100436133B1 (ko) | 반도체 소자의 제조방법 | |
| JPS63208263A (ja) | 半導体装置 | |
| KR100250092B1 (ko) | 디램의 캐패시터 제조방법 | |
| JPS627152A (ja) | 半導体メモリ | |
| JP2906875B2 (ja) | 半導体メモリセル及びその製造方法 | |
| JPH01175253A (ja) | 半導体記憶装置の製造方法 | |
| JP2949739B2 (ja) | 半導体集積回路装置 | |
| KR100220937B1 (ko) | 반도체소자의 제조방법 | |
| JP2827377B2 (ja) | 半導体集積回路 |