EP1148552A3 - Vertical transistor DRAM cell with stacked storage capacitor and associated method cell - Google Patents
Vertical transistor DRAM cell with stacked storage capacitor and associated method cell Download PDFInfo
- Publication number
- EP1148552A3 EP1148552A3 EP01303617A EP01303617A EP1148552A3 EP 1148552 A3 EP1148552 A3 EP 1148552A3 EP 01303617 A EP01303617 A EP 01303617A EP 01303617 A EP01303617 A EP 01303617A EP 1148552 A3 EP1148552 A3 EP 1148552A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- cell
- access transistor
- cell access
- storage capacitor
- pillar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/553,868 US6603168B1 (en) | 2000-04-20 | 2000-04-20 | Vertical DRAM device with channel access transistor and stacked storage capacitor and associated method |
US553868 | 2000-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1148552A2 EP1148552A2 (en) | 2001-10-24 |
EP1148552A3 true EP1148552A3 (en) | 2005-10-12 |
Family
ID=24211094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01303617A Withdrawn EP1148552A3 (en) | 2000-04-20 | 2001-04-20 | Vertical transistor DRAM cell with stacked storage capacitor and associated method cell |
Country Status (5)
Country | Link |
---|---|
US (1) | US6603168B1 (en) |
EP (1) | EP1148552A3 (en) |
JP (2) | JP2001308203A (en) |
KR (1) | KR100757697B1 (en) |
TW (1) | TW490840B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6706603B2 (en) * | 2001-02-23 | 2004-03-16 | Agere Systems Inc. | Method of forming a semiconductor device |
US6478231B1 (en) * | 2001-06-29 | 2002-11-12 | Hewlett Packard Company | Methods for reducing the number of interconnects to the PIRM memory module |
US20030052365A1 (en) * | 2001-09-18 | 2003-03-20 | Samir Chaudhry | Structure and fabrication method for capacitors integratible with vertical replacement gate transistors |
US7372091B2 (en) * | 2004-01-27 | 2008-05-13 | Micron Technology, Inc. | Selective epitaxy vertical integrated circuit components |
JP4164452B2 (en) * | 2004-02-02 | 2008-10-15 | キヤノン株式会社 | Information processing method and apparatus |
US7504685B2 (en) * | 2005-06-28 | 2009-03-17 | Micron Technology, Inc. | Oxide epitaxial isolation |
JP5525156B2 (en) * | 2008-12-09 | 2014-06-18 | ピーエスフォー ルクスコ エスエイアールエル | Semiconductor device and method of manufacturing the semiconductor device |
JP4530098B1 (en) | 2009-05-29 | 2010-08-25 | 日本ユニサンティスエレクトロニクス株式会社 | Semiconductor device |
US9177872B2 (en) | 2011-09-16 | 2015-11-03 | Micron Technology, Inc. | Memory cells, semiconductor devices, systems including such cells, and methods of fabrication |
KR20230104756A (en) * | 2012-05-10 | 2023-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
US9698261B2 (en) | 2014-06-30 | 2017-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical device architecture |
US9911848B2 (en) * | 2014-08-29 | 2018-03-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vertical transistor and method of manufacturing the same |
CN118235532A (en) * | 2021-11-09 | 2024-06-21 | 新加坡优尼山帝斯电子私人有限公司 | Semiconductor memory device and method for manufacturing semiconductor memory device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04176168A (en) * | 1990-11-08 | 1992-06-23 | Oki Electric Ind Co Ltd | Semiconductor memory device and manufacture thereof |
US5243209A (en) * | 1990-11-22 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device including junction field effect transistor and capacitor and method of manufacturing the same |
US5270239A (en) * | 1991-08-21 | 1993-12-14 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a dynamic random access memory cell |
JPH06260610A (en) * | 1993-03-02 | 1994-09-16 | Toshiba Corp | Semiconductor storage and its manufacture |
US5994729A (en) * | 1996-10-22 | 1999-11-30 | Lg Semicon Co., Ltd. | DRAM cell and method of fabricating the same |
US6027975A (en) * | 1998-08-28 | 2000-02-22 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
JPH0793365B2 (en) * | 1984-09-11 | 1995-10-09 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
US5140389A (en) | 1988-01-08 | 1992-08-18 | Hitachi, Ltd. | Semiconductor memory device having stacked capacitor cells |
US5208172A (en) * | 1992-03-02 | 1993-05-04 | Motorola, Inc. | Method for forming a raised vertical transistor |
US5234856A (en) | 1992-04-15 | 1993-08-10 | Micron Technology, Inc. | Dynamic random access memory cell having a stacked-trench capacitor that is resistant to alpha particle generated soft errors, and method of manufacturing same |
US5335138A (en) | 1993-02-12 | 1994-08-02 | Micron Semiconductor, Inc. | High dielectric constant capacitor and method of manufacture |
JP3403231B2 (en) * | 1993-05-12 | 2003-05-06 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
JP3197134B2 (en) * | 1994-01-18 | 2001-08-13 | 株式会社東芝 | Semiconductor device |
KR0135803B1 (en) | 1994-05-13 | 1998-04-24 | 김광호 | Semiconductor memory device and manufacture therefor |
JP3745392B2 (en) * | 1994-05-26 | 2006-02-15 | 株式会社ルネサステクノロジ | Semiconductor device |
US5885882A (en) | 1995-07-18 | 1999-03-23 | Micron Technology, Inc. | Method for making polysilicon electrode with increased surface area making same |
US5668036A (en) | 1996-06-21 | 1997-09-16 | Vanguard International Semiconductor Corporation | Fabrication method of the post structure of the cell for high density DRAM |
US5712813A (en) | 1996-10-17 | 1998-01-27 | Zhang; Guobiao | Multi-level storage capacitor structure with improved memory density |
US5885864A (en) | 1996-10-24 | 1999-03-23 | Micron Technology, Inc. | Method for forming compact memory cell using vertical devices |
US5824582A (en) | 1997-06-04 | 1998-10-20 | Vanguard International Semiconductor Corporation | Stack DRAM cell manufacturing process with high capacitance capacitor |
US5909618A (en) | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
US6078072A (en) * | 1997-10-01 | 2000-06-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a capacitor |
-
2000
- 2000-04-20 US US09/553,868 patent/US6603168B1/en not_active Expired - Lifetime
-
2001
- 2001-04-19 KR KR1020010021021A patent/KR100757697B1/en not_active IP Right Cessation
- 2001-04-19 TW TW090109388A patent/TW490840B/en not_active IP Right Cessation
- 2001-04-20 EP EP01303617A patent/EP1148552A3/en not_active Withdrawn
- 2001-04-20 JP JP2001122417A patent/JP2001308203A/en active Pending
-
2007
- 2007-09-19 JP JP2007241699A patent/JP4888975B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04176168A (en) * | 1990-11-08 | 1992-06-23 | Oki Electric Ind Co Ltd | Semiconductor memory device and manufacture thereof |
US5243209A (en) * | 1990-11-22 | 1993-09-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device including junction field effect transistor and capacitor and method of manufacturing the same |
US5270239A (en) * | 1991-08-21 | 1993-12-14 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a dynamic random access memory cell |
JPH06260610A (en) * | 1993-03-02 | 1994-09-16 | Toshiba Corp | Semiconductor storage and its manufacture |
US5994729A (en) * | 1996-10-22 | 1999-11-30 | Lg Semicon Co., Ltd. | DRAM cell and method of fabricating the same |
US6027975A (en) * | 1998-08-28 | 2000-02-22 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 016, no. 486 (E - 1276) 8 October 1992 (1992-10-08) * |
PATENT ABSTRACTS OF JAPAN vol. 018, no. 661 (E - 1644) 14 December 1994 (1994-12-14) * |
Also Published As
Publication number | Publication date |
---|---|
US6603168B1 (en) | 2003-08-05 |
JP4888975B2 (en) | 2012-02-29 |
KR20010098730A (en) | 2001-11-08 |
JP2001308203A (en) | 2001-11-02 |
EP1148552A2 (en) | 2001-10-24 |
KR100757697B1 (en) | 2007-09-13 |
JP2008047933A (en) | 2008-02-28 |
TW490840B (en) | 2002-06-11 |
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Effective date: 20060317 |
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17Q | First examination report despatched |
Effective date: 20090929 |
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RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
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STAA | Information on the status of an ep patent application or granted ep patent |
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18D | Application deemed to be withdrawn |
Effective date: 20171103 |