JP2007102054A - 電気光学装置及びその製造方法、電子機器、並びに半導体装置 - Google Patents
電気光学装置及びその製造方法、電子機器、並びに半導体装置 Download PDFInfo
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H01L29/66409—Unipolar field-effect transistors
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Abstract
【解決手段】電気光学装置は、基板上に、表示領域に配列された複数の画素部と、表示領域の周辺に位置する周辺領域に配置されており、複数の画素部を駆動するための、第1単結晶シリコン膜からなるSOI(Silicon On Insulator)構造をなす第1半導体層及び該第1半導体層上にエピタキシャル成長により形成された第2単結晶シリコン膜からなる第2半導体層を有する半導体素子を含む駆動回路とを備える。
【選択図】図7
Description
<第1実施形態>
第1実施形態に係る液晶装置について、図1から図7を参照して説明する。
次に、上述した電気光学装置である液晶装置を各種の電子機器に適用する場合について説明する。
Claims (6)
- 基板上に、
表示領域に配列された複数の画素部と、
前記表示領域の周辺に位置する周辺領域に配置されており、前記複数の画素部を駆動するための、第1単結晶シリコン膜からなるSOI(Silicon On Insulator)構造をなす第1半導体層及び該第1半導体層上にエピタキシャル成長により形成された第2単結晶シリコン膜からなる第2半導体層を有する半導体素子を含む駆動回路と
を備えたことを特徴とする電気光学装置。 - 前記複数の画素部の各々は、前記駆動回路に電気的に接続されており、少なくともポリシリコン膜からなる第3半導体層を有する半導体素子を有することを特徴とする請求項1に記載の電気光学装置。
- 請求項1又は2に記載の電気光学装置を具備してなることを特徴とする電子機器。
- 基板上に、表示領域に配列された複数の画素部と、前記表示領域の周辺に位置する周辺領域に配置されており、前記複数の画素部を駆動するための半導体素子を含む駆動回路とを備える電気光学装置を製造する電気光学装置の製造方法であって、
少なくとも前記半導体素子を配置すべき領域に、第1単結晶シリコン膜からなるSOI構造をなす第1半導体層を形成し、該第1半導体層上にエピタキシャル成長により第2単結晶シリコン膜からなる第2半導体層を形成し、前記形成された第1及び第2半導体層を有するように前記半導体素子を形成する素子形成工程と、
前記表示領域に前記複数の画素部を形成する工程と
を備えたことを特徴とする電気光学装置の製造方法。 - 前記第2半導体層を形成する工程として、
前記第1半導体層上及び前記表示領域にアモルファスシリコン膜を積層し、
該アモルファスシリコン膜をエピタキシャル成長させることにより、前記第2単結晶シリコン膜からなる前記第2半導体層を形成すると共に前記表示領域に少なくともポリシリコン膜からなる前記第3半導体層を形成することを特徴とする請求項4に記載の電気光学装置の製造方法。 - 第1単結晶シリコン膜からなるSOI構造をなす第1半導体層と、
該第1半導体層上にエピタキシャル成長により形成された第2単結晶シリコン膜からなる第2半導体層と
を備えたことを特徴とする半導体装置。
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JP2005294429A JP4542492B2 (ja) | 2005-10-07 | 2005-10-07 | 電気光学装置及びその製造方法、電子機器、並びに半導体装置 |
US11/539,466 US7662704B2 (en) | 2005-10-07 | 2006-10-06 | Electro-optical device, method of manufacturing the same, electronic apparatus, and semiconductor device |
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JP2005294429A JP4542492B2 (ja) | 2005-10-07 | 2005-10-07 | 電気光学装置及びその製造方法、電子機器、並びに半導体装置 |
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JP2007102054A true JP2007102054A (ja) | 2007-04-19 |
JP4542492B2 JP4542492B2 (ja) | 2010-09-15 |
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JP (1) | JP4542492B2 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009044142A (ja) * | 2007-07-13 | 2009-02-26 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、及び半導体装置の作製方法 |
JP2009157367A (ja) * | 2007-12-03 | 2009-07-16 | Semiconductor Energy Lab Co Ltd | 表示装置およびその作製方法 |
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JP2011071491A (ja) * | 2009-08-25 | 2011-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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JP2015188063A (ja) * | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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JPS6355529A (ja) | 1986-08-25 | 1988-03-10 | Nec Corp | アクティブ・マトリクス液晶表示装置の製造方法 |
US4902642A (en) * | 1987-08-07 | 1990-02-20 | Texas Instruments, Incorporated | Epitaxial process for silicon on insulator structure |
JP3120879B2 (ja) | 1991-11-08 | 2000-12-25 | キヤノン株式会社 | アクティブマトリクス型液晶表示素子の駆動用半導体装置の製造方法 |
JP3997682B2 (ja) | 2000-03-13 | 2007-10-24 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
US7176109B2 (en) * | 2001-03-23 | 2007-02-13 | Micron Technology, Inc. | Method for forming raised structures by controlled selective epitaxial growth of facet using spacer |
JP4267266B2 (ja) | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7186630B2 (en) * | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
TWI279852B (en) * | 2004-03-16 | 2007-04-21 | Imec Inter Uni Micro Electr | Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made thereby |
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JP2009044142A (ja) * | 2007-07-13 | 2009-02-26 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器、及び半導体装置の作製方法 |
JP2009157367A (ja) * | 2007-12-03 | 2009-07-16 | Semiconductor Energy Lab Co Ltd | 表示装置およびその作製方法 |
US8802462B2 (en) | 2007-12-03 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
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JP2010245484A (ja) * | 2009-03-17 | 2010-10-28 | Ricoh Co Ltd | Mosトランジスタおよび該mosトランジスタを内蔵した半導体装置ならびに該半導体装置を用いた電子機器 |
JP2010258435A (ja) * | 2009-04-02 | 2010-11-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011071491A (ja) * | 2009-08-25 | 2011-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US9366925B2 (en) | 2011-09-28 | 2016-06-14 | Seiko Epson Corporation | Electro-optical apparatus, and electronic apparatus |
JP2015188063A (ja) * | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10249768B2 (en) | 2014-02-07 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
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JP4542492B2 (ja) | 2010-09-15 |
US7662704B2 (en) | 2010-02-16 |
US20070087534A1 (en) | 2007-04-19 |
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