JPH11310843A5 - - Google Patents

Info

Publication number
JPH11310843A5
JPH11310843A5 JP1999028940A JP2894099A JPH11310843A5 JP H11310843 A5 JPH11310843 A5 JP H11310843A5 JP 1999028940 A JP1999028940 A JP 1999028940A JP 2894099 A JP2894099 A JP 2894099A JP H11310843 A5 JPH11310843 A5 JP H11310843A5
Authority
JP
Japan
Prior art keywords
aluminum
silicon carbide
compact
mixed powder
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999028940A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11310843A (ja
JP4304749B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP02894099A priority Critical patent/JP4304749B2/ja
Priority claimed from JP02894099A external-priority patent/JP4304749B2/ja
Priority to EP99301332A priority patent/EP0938137A3/en
Priority to US09/256,783 priority patent/US6123895A/en
Publication of JPH11310843A publication Critical patent/JPH11310843A/ja
Priority to US09/498,338 priority patent/US6507105B1/en
Publication of JPH11310843A5 publication Critical patent/JPH11310843A5/ja
Application granted granted Critical
Publication of JP4304749B2 publication Critical patent/JP4304749B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP02894099A 1998-02-24 1999-02-05 半導体装置用部材の製造方法 Expired - Lifetime JP4304749B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP02894099A JP4304749B2 (ja) 1998-02-24 1999-02-05 半導体装置用部材の製造方法
EP99301332A EP0938137A3 (en) 1998-02-24 1999-02-24 Member for semiconductor device and method for producing the same
US09/256,783 US6123895A (en) 1998-02-24 1999-02-24 Aluminum base member for semiconductor device containing a nitrogen rich surface and method for producing the same
US09/498,338 US6507105B1 (en) 1998-02-24 2000-02-04 Member for semiconductor device and method for producing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-41447 1998-02-24
JP4144798 1998-02-24
JP02894099A JP4304749B2 (ja) 1998-02-24 1999-02-05 半導体装置用部材の製造方法

Publications (3)

Publication Number Publication Date
JPH11310843A JPH11310843A (ja) 1999-11-09
JPH11310843A5 true JPH11310843A5 (https=) 2005-10-27
JP4304749B2 JP4304749B2 (ja) 2009-07-29

Family

ID=26367094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02894099A Expired - Lifetime JP4304749B2 (ja) 1998-02-24 1999-02-05 半導体装置用部材の製造方法

Country Status (3)

Country Link
US (2) US6123895A (https=)
EP (1) EP0938137A3 (https=)
JP (1) JP4304749B2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4080030B2 (ja) * 1996-06-14 2008-04-23 住友電気工業株式会社 半導体基板材料、半導体基板、半導体装置、及びその製造方法
US6876075B2 (en) 2000-03-15 2005-04-05 Sumitomo Electric Industries, Ltd. Aluminum-silicon carbide semiconductor substrate and method for producing the same
DE10066005C2 (de) * 2000-06-28 2003-04-10 Eisenmann Kg Maschbau Verfahren zum Sintern von aluminiumbasierten Sinterteilen
JP3598954B2 (ja) * 2000-08-21 2004-12-08 株式会社村田製作所 電圧非直線抵抗体の製造方法
JP4756200B2 (ja) * 2000-09-04 2011-08-24 Ｄｏｗａメタルテック株式会社 金属セラミックス回路基板
US6835889B2 (en) * 2001-09-21 2004-12-28 Kabushiki Kaisha Toshiba Passive element component and substrate with built-in passive element
JP4113971B2 (ja) * 2002-07-30 2008-07-09 株式会社豊田自動織機 低膨張材料及びその製造方法
US6875995B2 (en) * 2002-08-16 2005-04-05 Cree, Inc. Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor
US7026399B2 (en) * 2002-09-27 2006-04-11 Taylor Made Golf Company, Inc. Golf ball incorporating a polymer network comprising silicone
JP3971296B2 (ja) * 2002-12-27 2007-09-05 Ｄｏｗａホールディングス株式会社 金属−セラミックス接合基板およびその製造方法
AU2003292484A1 (en) * 2003-01-13 2004-08-10 Koninklijke Philips Electronics N.V. Electronic device and method of manufacturing a substrate
JP4014528B2 (ja) * 2003-03-28 2007-11-28 日本碍子株式会社 ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
EP1518847B1 (en) * 2003-09-29 2013-08-28 Dowa Metaltech Co., Ltd. Aluminum/ceramic bonding substrate and method for producing same
JP4382547B2 (ja) * 2004-03-24 2009-12-16 株式会社アライドマテリアル 半導体装置用基板と半導体装置
JP4918856B2 (ja) * 2004-04-05 2012-04-18 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP4913605B2 (ja) 2005-01-20 2012-04-11 株式会社アライドマテリアル 半導体装置用部材の製造方法
JP4378334B2 (ja) * 2005-09-09 2009-12-02 日本碍子株式会社 ヒートスプレッダモジュール及びその製造方法
JP5048266B2 (ja) 2006-04-27 2012-10-17 株式会社アライドマテリアル 放熱基板とその製造方法
DE102007054455B3 (de) * 2007-11-13 2009-04-09 Eads Deutschland Gmbh Verfahren zum Herstellen eines metallischen Verbunds
US8828804B2 (en) * 2008-04-30 2014-09-09 Infineon Technologies Ag Semiconductor device and method
US7754533B2 (en) * 2008-08-28 2010-07-13 Infineon Technologies Ag Method of manufacturing a semiconductor device
US8637379B2 (en) * 2009-10-08 2014-01-28 Infineon Technologies Ag Device including a semiconductor chip and a carrier and fabrication method
FR3006936B1 (fr) * 2013-06-12 2015-07-03 Ct Tech Des Ind Mecaniques Procede et ensemble de production d'une piece mecanique par frittage d'un materiau pulverulent
KR101749066B1 (ko) * 2014-12-15 2017-06-20 이건배 신개념을 이용한 알루미늄 기지 복합재료의 제조방법 및 이에 의하여 제조된 알루미늄 기지 복합재료
CN109702185B (zh) * 2019-01-23 2021-04-06 宁波合盛新材料有限公司 一种铝基复合材料锻压件及其制备方法

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US3178807A (en) * 1961-10-05 1965-04-20 Du Pont Cermet of aluminum with boron carbide or silicon carbide
US4786467A (en) * 1983-06-06 1988-11-22 Dural Aluminum Composites Corp. Process for preparation of composite materials containing nonmetallic particles in a metallic matrix, and composite materials made thereby
JPS61222668A (ja) * 1985-03-28 1986-10-03 Kobe Steel Ltd 複合材料の製造法
US4715892A (en) 1986-03-12 1987-12-29 Olin Corporation Cermet substrate with glass adhesion component
US4828008A (en) * 1987-05-13 1989-05-09 Lanxide Technology Company, Lp Metal matrix composites
US5006417A (en) * 1988-06-09 1991-04-09 Advanced Composite Materials Corporation Ternary metal matrix composite
US5000246A (en) * 1988-11-10 1991-03-19 Lanxide Technology Company, Lp Flotation process for the formation of metal matrix composite bodies
US5163499A (en) * 1988-11-10 1992-11-17 Lanxide Technology Company, Lp Method of forming electronic packages
JP2590603B2 (ja) * 1990-10-09 1997-03-12 三菱電機株式会社 電子部品塔載用基材
US5616421A (en) * 1991-04-08 1997-04-01 Aluminum Company Of America Metal matrix composites containing electrical insulators
US5775403A (en) 1991-04-08 1998-07-07 Aluminum Company Of America Incorporating partially sintered preforms in metal matrix composites
US5384087A (en) * 1992-04-06 1995-01-24 Ametek, Specialty Metal Products Division Aluminum-silicon carbide composite and process for making the same
US5886407A (en) * 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US5532513A (en) 1994-07-08 1996-07-02 Johnson Matthey Electronics, Inc. Metal-ceramic composite lid
US5780164A (en) 1994-12-12 1998-07-14 The Dow Chemical Company Computer disk substrate, the process for making same, and the material made therefrom
AUPN273695A0 (en) * 1995-05-02 1995-05-25 University Of Queensland, The Aluminium alloy powder blends and sintered aluminium alloys
JPH09157773A (ja) * 1995-10-03 1997-06-17 Hitachi Metals Ltd 低熱膨張・高熱伝導性アルミニウム複合材料及びその製造方法
JP4080030B2 (ja) * 1996-06-14 2008-04-23 住友電気工業株式会社 半導体基板材料、半導体基板、半導体装置、及びその製造方法
JP4071843B2 (ja) * 1997-04-11 2008-04-02 住友電気工業株式会社 複合合金部材の製造方法
US6245442B1 (en) * 1997-05-28 2001-06-12 Kabushiki Kaisha Toyota Chuo Metal matrix composite casting and manufacturing method thereof

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