JPH1126735A5 - - Google Patents

Info

Publication number
JPH1126735A5
JPH1126735A5 JP1997195054A JP19505497A JPH1126735A5 JP H1126735 A5 JPH1126735 A5 JP H1126735A5 JP 1997195054 A JP1997195054 A JP 1997195054A JP 19505497 A JP19505497 A JP 19505497A JP H1126735 A5 JPH1126735 A5 JP H1126735A5
Authority
JP
Japan
Prior art keywords
wafer
silicon layer
layer
silicon
bonded soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997195054A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1126735A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP19505497A priority Critical patent/JPH1126735A/ja
Priority claimed from JP19505497A external-priority patent/JPH1126735A/ja
Publication of JPH1126735A publication Critical patent/JPH1126735A/ja
Publication of JPH1126735A5 publication Critical patent/JPH1126735A5/ja
Pending legal-status Critical Current

Links

JP19505497A 1997-07-04 1997-07-04 結合ｓｏｉウェハ Pending JPH1126735A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19505497A JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19505497A JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Publications (2)

Publication Number Publication Date
JPH1126735A JPH1126735A (ja) 1999-01-29
JPH1126735A5 true JPH1126735A5 (enExample) 2004-11-04

Family

ID=16334795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19505497A Pending JPH1126735A (ja) 1997-07-04 1997-07-04 結合ｓｏｉウェハ

Country Status (1)

Country Link
JP (1) JPH1126735A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU5474299A (en) * 1998-08-10 2000-03-06 Memc Electronic Materials, Inc. Process for preparation of silicon on insulator substrates with improved resistance to formation of metal precipitates
KR100837280B1 (ko) 2007-03-12 2008-06-11 삼성전자주식회사 게터링 영역을 포함하는 반도체 소자 및 그 형성 방법
JP5696349B2 (ja) * 2008-09-05 2015-04-08 株式会社Sumco 裏面照射型固体撮像素子用ウェーハの製造方法

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